Fast Recovery Diode RF301B2S zApplications General rectification zDimentions(Unit : mm) zLand size figure(Unit : mm) 6.0 6.0 1.6 1.6 3)Very fast recovery 4)Low switching loss CPD 3.0 2.0 zFeatures 1)Power mold type(CPD) 2)Ultra Low VF 2.3 2.3 zStructure zConstruction Silicon epitaxial planar (2) ROHM : CPD JEITA : SC-63 Manufacture Date (1) (3) zTaping specifications(Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol VRM VR Io IFSM Tj Tstg (*1)Bussiness frequencies, Rating of R-load, Tc=128°C MAX. Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature zElectrical characteristics(Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal impedance www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Symbol VF IR Unit V V A A 200 200 3 40 150 -55 to +150 °C °C Min. - Typ. 0.87 Max. 0.93 Unit V trr - 10nA 14 10 25 µA ns θjc - - 6 °C/W 1/3 Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R JUNCTION TO CASE 2009.11 - Rev.D Data Sheet RF301B2S zElectrical characteristics curves 10 10000 Ta=25°C Ta=-25°C 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:I F(A) 1000 Ta=125°C 0.1 100 Ta=125°C f=1MHz Ta=150°C 1 Ta=150°C Ta=75°C 100 Ta=25°C 10 Ta=-25°C 1 0.1 0 0.001 0 870 860 AVE:859.4mV 80 70 60 50 40 30 AVE:4.60nA 20 130 120 110 100 90 AVE:99.4pF 80 70 10 60 0 50 Ct DISPERSION MAP IR DISPERSION MAP 8.3ms 150 100 AVE:126.0A 50 0 RESERVE RECOVERY TIME:trr(ns) 1cyc 1000 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:13.7ns 5 Ifsm 8.3ms 8.3ms 100 1cyc 10 1 0 1 IFSM DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 30 Ta=25°C f=1MHz VR=0V n=10pcs 140 30 Ifsm 20 150 VF DISPERSION MAP 300 10 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS Ta=25°C VR=200V n=30pcs 90 840 PEAK SURGE FORWARD CURRENT:I FSM(A) 1 200 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 880 200 150 100 Ta=25°C IF=3A n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:V F(mV) 890 250 100 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 850 50 100 200 300 400 500 600 700 800 900 1000 PEAK SURGE FORWARD CURRENT:I FSM(A) 0 10 trr DISPERSION MAP 2/3 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2009.11 - Rev.D Data Sheet RF301B2S 1000 100 5 Mounted on epoxy board t 100 10 1 10 100 Rth(j-a) 10 Rth(j-c) IM=100mA 1ms tim 300us 0.1 0.001 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 3 DC 2 1 0 10 0 1000 t 7 6 DC VR D=t/T VR=100V T Tj=150°C 5 4 D=1/2 3 2 Sin(θ=180) 1 2 3 4 5 30 9 0A 0V 8 t 7 6 DC VR D=t/T VR=100V T Tj=150°C 5 4 D=1/2 3 2 No break at 30kV Io Sin(θ=180) No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 8 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 1 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 10 9 Sin(θ =180) TIME:t(s) Rth-t CHARACTERISTICS 10 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) IF=1.5A 1 D=1/2 4 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (°C/W) PEAK SURGE FORWARD CURRENT: IFSM(A) Ifsm 20 15 10 5 1 0 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(°C) Derating Curve"(Io-Ta) www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 150 0 25 50 75 100 125 CASE TEMPARATURE : Tc(°C) Derating Curve"(Io-Tc) 3/3 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2009.11 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. 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