SSD55N03
55A, 25V,RDS(ON)6mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
TO-252
The SSD55N03 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Features
* Repetitive Avalanche Rated
* Dynamic dv/dt Rating
* Simple Drive Requirement
* Fast Switching
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Ratings
Unit
25
V
± 20
V
Continuous Drain Current,VGS@10V
ID@TC=25 C
55
A
Continuous Drain Current,VGS@10V
o
ID@TC=100C
35
A
IDM
215
A
62.5
W
0.5
W/ C
mJ
Pulsed Drain Current
1
Total Power Dissipation
o
PD@TC=25 C
Linear Derating Factor
2
Single Pulse Avalanche Energy
EAS
240
Avalanche Current
IAR
31
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Symbol
Ratings
o
A
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Max.
Rthj-c
Rthj-a
Unit
2.0
o
110
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSD55N03
55A, 25V,RDS(ON)6mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
25
_
BVDS/ Tj
_
0.037
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=±20V
_
_
1
uA
VDS=25V,VGS=0
_
_
25
uA
VDS=20V,VGS=0
_
4.5
6
7
9
16.8
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
3
Static Drain-Source On-Resistance
IDSS
RD S (O N )
_
Total Gate Charge3
Qg
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
Td(ON)
_
Tr
_
Td(Off)
_
Tf
_
Ciss
6
_
_
Max.
_
V
_
V/ C
_
4.9
_
15.1
_
4
_
45.2
_
7.6
_
2326
_
331
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
30
Symbol
Min.
Typ.
174
Unit
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=1mA
VGS=10V, ID=30A
VGS=4.5V, ID=30A
nC
ID=28A
VDS=20V
VGS=5V
VDD=15V
ID=28A
nS
VGS=10V
RG=3.3Ω
RD=0.53Ω
pF
VGS=0V
VDS=25V
_
S
VDS=10V, ID=28A
Max.
Unit
f=1.0MHz
_
Source-Drain Diode
Parameter
Forward On Voltage 3
Continuous Source Current(Body Diode)
VSD
_
_
IS
_
_
Test Condition
o
1.5
V
IS=20 A, VGS=0V,Tj=25 C
55
A
VD=VG=0V,VS=1.5 V
Notes: 1.Pulse width limited by safe operating area.
2. Staring Tj=25oC,VDD=25V,L=0.1mH,RG=25 Ω ,IAS=10A
3. Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSD55N03
Elektronische Bauelemente
55A, 25V,RDS(ON)6mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
9
8
7
6
5
4
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 4
SSD55N03
Elektronische Bauelemente
55A, 25V,RDS(ON)6mΩ
N-Channel Enhancement Mode Power Mos.FET
28 A
V DS = 16 V
V DS = 20 V
V DS = 24 V
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4