SSF7509
Feathers:
ID=80A
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
BV=80V
Rdson=8mohm
Description:
The SSF7509 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 6.2mohm.
Application:
Power switching application
SSF7509 TOP View (TO220)
Absolute Maximum Ratings
Parameter
Max.
Units
ID@Tc=25 ْC
Continuous drain current,VGS@10V
80
ID@Tc=100ْC
Continuous drain current,VGS@10V
72
IDM
Pulsed drain current ①
320
PD@TC=25ْC
Power dissipation
165
W
Linear derating factor
2.0
W/ ْC
VGS
Gate-to-Source voltage
±20
V
dv/dt
Peak diode recovery voltage
31
v/ns
EAS
Single pulse avalanche energy ②
500
mJ
EAR
Repetitive avalanche energy
TBD
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
–55 to +150
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.75
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
BVDSS
Drain-to-Source breakdown voltage
80
—
RDS(on)
Static Drain-to-Source on-resistance
—
VGS(th)
Gate threshold voltage
2.0
gfs
Forward transconductance
-
IDSS
IGSS
Drain-to-Source leakage current
Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD.
2008.8.1
Max. Units
—
Test Conditions
V
VGS=0V,ID=250μA
Ω
VGS=10V,ID=40A
4.0
V
VDS=VGS,ID=250μA
58
—
S
VDS=5V,ID=30A
—
—
2
—
—
10
—
—
100
0.0067 0.008
VDS=80V,VGS=0V
μA
VDS=80V,
VGS=0V,TJ=150ْC
nA
Version : 1.0
VGS=20V
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SSF7509
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
100
—
Qgs
Gate-to-Source charge
—
18
—
Qgd
Gate-to-Drain("Miller") charge
—
28
—
nC VDD=30V
VGS=10V
td(on)
Turn-on delay time
—
20
—
VDD=30V
tr
Rise time
—
17.8
—
td(off)
Turn-Off delay time
—
76.8
—
tf
Fall time
—
15.7
—
VGS=10V
Ciss
Input capacitance
—
3200
—
VGS=0V
Coss
Output capacitance
—
330
—
Crss
Reverse transfer capacitance
—
260
—
VGS=-20V
ID=30A
nS
ID=2A ,RL=15Ω
RG=2.5Ω
pF VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
.
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ①
.
Min.
Typ.
Max.
—
—
80
Units
MOSFET symbol
A
—
—
320
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
trr
Reverse Recovery Time
－
57
—
nS
TJ=25ْC,IF=75A
Qrr
Reverse Recovery Charge
－
108
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 57A, VDD = 47V
③ Pulse width≤300μS; duty cycle≤1.5% RG = 25ΩStarting TJ = 25°C
EAS test circuits:
Gate charge test circuit:
BV dss
©Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page
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SSF7509
Switch Waveforms:
Switch Time Test Circuit：
Transfer Characteristic
Capacitance
On Resistance vs Junction Temperature
Breakdown Voltage vs Junction Temperature
©Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page
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SSF7509
Gate Charge
Source-Drain Diode Forward Voltage
Max Drain Current vs Junction Temperature
Safe Operation Area
Transient Thermal Impedance Curve
©Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page
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SSF7509
TO220 MECHANICAL DATA:
©Silikron Semiconductor CO.,LTD.
2008.8.1
Version : 1.0
page
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