ZETEX ZX5T849Z

ZX5T849Z
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = 30V : RSAT = 23m ; IC = 6.0A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 30V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
• Extemely low equivalent on-resistance; RSAT = 23m at 6.5A
SOT89
• 6 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 amps
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZX5T849ZTA
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
7”
12mm
embossed
1000 units
DEVICE MARKING
• 849
TOP VIEW
ISSUE 3 - DECEMBER 2004
1
SEMICONDUCTORS
ZX5T849Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
V
Collector-base voltage
BV CBO
80
Collector-emitter voltage
BV CEO
30
V
Emitter-base voltage
BV EBO
7
V
Continuous collector current (a)
IC
6
A
Peak pulse current
I CM
20
A
Power dissipation at T A =25°C (a)
PD
1.5
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
12
mW/°C
PD
2.1
W
16.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
83
°C/W
Junction to ambient (b)
R ⍜JA
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 3 - DECEMBER 2004
SEMICONDUCTORS
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ZX5T849Z
CHARACTERISTICS
ISSUE 3 - DECEMBER 2004
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SEMICONDUCTORS
ZX5T849Z
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-base breakdown voltage
BV CBO
80
125
MAX. UNIT CONDITIONS
V
I C =100␮A
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CER
80
125
V
Collector-emitter breakdown voltage
BV CEO
30
40
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
Collector cut-off current
20
nA
V CB =70V
0.5
␮A
VCB=70V, Tamb=100⬚C
I CER
20
nA
V CB =70V
Rⱕ1k⍀
0.5
␮A
VCB=70V, Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
10
nA
22
35
mV
I C =0.5A, I B =20mA*
25
45
mV
IC=1A, IB=100mA*
40
60
mV
IC=1A, IB=20mA*
90
115
mV
IC=2A, IB=20mA*
IC=6.5A, IB=300mA*
150
190
mV
Base-emitter saturation voltage
V BE(SAT)
1000
1100
mV
I C =6.5A, I B =300mA*
Base-emitter turn-on voltage
V BE(ON)
890
1000
mV
I C =6.5A, V CE =1V*
Static forward current transfer ratio
h FE
100
175
100
200
100
150
IC=7A, VCE=1V*
20
30
IC=20A, VCE=1V*
140
I C =10mA, V CE =1V*
IC=1A, VCE=1V*
300
MHz IC =100mA, VCE =10V
Transition frequency
fT
Output capacitance
C OBO
48
pF
V CB =10V, f=1MHz*
Switching times
t ON
37
ns
t OFF
425
I C =1A, V CC =10V,
I B1 =-I B2 =100mA
f=50MHz
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
ISSUE 3 - DECEMBER 2004
SEMICONDUCTORS
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ZX5T849Z
TYPICAL CHARACTERISTICS
ISSUE 3 - DECEMBER 2004
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SEMICONDUCTORS
ZX5T849Z
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
b
0.38
0.48
0.015
0.019
e
1.40
1.50
0.055
0.059
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
c
0.28
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
D
4.40
4.60
0.173
0.181
-
-
-
-
-
© Zetex Semiconductors plc 2004
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ISSUE 3 - DECEMBER 2004
SEMICONDUCTORS
6