DIODES ZXTN2010Z

ZXTN2010Z
60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = 60V : RSAT = 30m ; IC = 5A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers
extremely low on state losses making it ideal for use in DC-DC circuits and various
driving and power management functions.
FEATURES
• Extremely low equivalent on-resistance; RSAT = 30mV at 6A
SOT89
• 5 amps continuous current
• Up to 20 amps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 10 amps
APPLICATIONS
• Emergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC-DC modules
• Backlight inverters
• Power switches
PINOUT
• MOSFET gate drivers
ORDERING INFORMATION
DEVICE
ZXTN2010ZTA
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
7”
12mm
embossed
1,000 units
DEVICE MARKING
TOP VIEW
851
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SEMICONDUCTORS
ZXTN2010Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector-base voltage
BV CBO
150
V
Collector-emitter voltage
BV CEO
60
V
BV EBO
7
V
A
Emitter-base voltage
(a)
LIMIT
UNIT
IC
5
Peak pulse current
I CM
20
A
Power dissipation at T A =25°C (a)
PD
1.5
W
Linear derating factor
Power dissipation at T A =25°C (b)
Linear derating factor
12
mW/°C
PD
2.1
W
16.8
mW/°C
Operating and storage temperature range
T j , T stg
-55 to +150
°C
Continuous collector current
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
83
°C/W
(b)
R ⍜JA
60
°C/W
Junction to ambient
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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ZXTN2010Z
CHARACTERISTICS
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Collector-base breakdown voltage
BV CBO
150
190
V
I C =100␮A
Collector-emitter breakdown voltage
BV CER
150
190
V
I C =1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage
BV CEO
60
80
V
I C =10mA*
Emitter-base breakdown voltage
BV EBO
7
8.1
V
I E =100␮A
Collector cut-off current
I CBO
50
nA
V CB =120V
0.5
␮A
VCB=120V,Tamb=100⬚C
Collector cut-off current
I CER
100
nA
V CB =120V
R ⱕ 1k⍀
0.5
␮A
VCB=120V,Tamb=100⬚C
V EB =6V
Emitter cut-off current
I EBO
Collector-emitter saturation voltage
V CE(SAT)
Base-emitter saturation voltage
V BE(SAT)
Base-emitter turn-on voltage
V BE(ON)
Static forward current transfer ratio
H FE
Transition frequency
10
nA
17
30
mV
I C =100mA, I B =5mA*
35
55
mV
IC=1A, IB=100mA*
40
65
mV
IC=1A, IB=50mA*
90
125
mV
IC=2A, IB=50mA*
170
230
mV
IC=6A, IB=300mA*
970
1100
mV
I C =6A, I B =300mA*
910
1050
mV
I C =6A, V CE =1V*
I C =10mA, V CE =1V*
100
200
100
200
55
105
IC=5A, VCE=1V*
20
40
IC=10A, VCE=1V*
IC=2A, VCE=1V*
300
130
fT
I C =100mA, V CE =10V
f=50MHz
Output capacitance
C OBO
31
pF
V CB =10V, f=1MHz*
Switching times
t ON
42
ns
t OFF
760
I C =1A, V CC =10V,
I B1 =I B2 =100mA
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
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ZXTN2010Z
TYPICAL CHARACTERISTICS
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PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
1.40
1.60
0.550
0.630
e
1.40
1.50
0.055
0.059
b
0.38
0.48
0.015
0.019
E
3.75
4.25
0.150
0.167
b1
-
0.53
-
0.021
E1
-
2.60
-
0.102
b2
1.50
1.80
0.060
0.071
G
2.90
3.00
0.114
0.118
c
0.28
0.44
0.011
0.017
H
2.60
2.85
0.102
0.112
D
4.40
4.60
0.173
0.181
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 2 - MAY 2006
SEMICONDUCTORS
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