VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1600 3370 5292 49×103 0.94 0.066 V A A A V mΩ Phase Control Thyristor 5STP 34H1601 Doc. No. 5SYA1065-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability Blocking Maximum rated values 1) 5STP 34H1601 5STP 34H1401 Symbol Conditions VDRM, VRRM f = 50 Hz, tp = 10 ms dV/dtcrit Exp. to 1070 V, Tvj = 125°C 1600 V 5STP 34H1201 1400 V 1200 V 1000 V/µs Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current IDRM VDRM, Tvj = 125°C 200 mA Reverse leakage current IRRM VRRM, Tvj = 125°C 200 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 45 50 max Unit 55 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Surface creepage distance DS min typ max 0.93 36 Air strike distance Da 15 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Unit kg mm mm 5STP 34H1601 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70°C max Unit 3370 A 5292 A 3 tp = 10 ms, Tvj = 125 °C, 49×10 A VD = VR = 0 V 6 12.01×10 3 52.3×10 tp = 8.3 ms, Tvj = 125 °C, VD = VR = 0 V 6 11.35×10 A2s A A2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 4000 A, Tvj = 125 °C 1.2 V Threshold voltage V(T0) IT = 4200 A - 12500 A, Tvj= 125 °C 0.94 V Slope resistance rT 0.066 mΩ Holding current IH Latching current Switching Maximum rated values IL min typ max Unit Tvj = 25 °C 170 mA Tvj = 125 °C 90 mA Tvj = 25 °C 1500 mA Tvj = 125 °C 1000 mA 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min Tvj = 125 °C, Cont. ITRM = A, f = 50 Hz VD ≤ 2950 V, Cont. IFG = 2 A, tr = 0.3 µs f = 1 Hz Tvj = 125°C, ITRM = 4000 A, VR = 100 V, diT/dt = -12.5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 50V/µs typ max Unit 200 A/µs 1000 A/µs 200 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tvj = 125°C, ITRM = 4000 A, VR = 100 V, diT/dt = -12.5 A/µs Gate turn-on delay time tgd VD = 0.4⋅VRM, IFG = 2 A, tr = 0.3 µs, Tvj = 25 °C min typ max Unit 2800 µAs 2 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 2 of 6 5STP 34H1601 Triggering Maximum rated values 1) Parameter Symbol Conditions Peak forward gate voltage VFGM min typ max 12 Unit V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Mean forward gate power PG(AV) 5 W Characteristic values Parameter Symbol Conditions Gate-trigger voltage VGT max Unit Tvj = -40 °C min 4 V Tvj = 25 °C 3 Tvj = 125 °C Gate-trigger current IGT typ 0.25 2 Tvj = -40 °C 500 Tvj = 25 °C 250 Tvj = 125 °C 10 mA 150 Thermal Maximum rated values 1) Parameter Symbol Conditions min Operating junction temperature range Tvj max Unit -40 125 °C -40 125 °C max Unit Double-side cooled Fm = 45...55 kN 10 K/kW Rth(j-c)A Anode-side cooled Fm = 45...55 kN 16 K/kW Rth(j-c)C Cathode-side cooled Fm = 45...55 kN 26.5 K/kW Double-side cooled Fm = 45...55 kN 3 K/kW Single-side cooled Fm = 45...55 kN 6 K/kW Storage temperature range Tstg typ Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 6.730 1.440 0.650 1.160 τi(s) 0.4871 0.1468 0.0677 0.0079 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 3 of 6 25°C 125°C 20000 18000 80 18 I TSM 2 ∫i dt 75 17 70 16 65 15 60 14 55 13 8000 50 12 6000 45 11 4000 40 10 35 9 i 2dt (106 A2s) 22000 ITSM ( kA ) IT ( A ) 5STP 34H1601 16000 14000 12000 10000 2000 0 0 0,5 1 1,5 2 30 2,5 3 VT ( V ) Fig. 2 Max. on-state voltage characteristics VG ( V ) 6 DC = P GAVm 10 14 V FGM 12 500µs 10 5 -40 °C 1ms 8 4 8 100 t ( ms ) Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V VG ( V ) 7 1 +25 °C +125 °C 4 IGTmin 2 IFGM 6 3 10ms DC = P GAVm 2 1 V GTmin 0 0 0 0,5 Fig. 4 Gate trigger characteristics 1 0 2 4 6 8 IG ( A ) 10 12 IG ( A ) Fig. 5 Gate trigger characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 4 of 6 6000 ψ = 30° 60° 90° 120° 180° 5000 PT ( W ) PT ( W ) 5STP 34H1601 6000 ψ = 30° 60° 90° 120°180° 270° 5000 DC DC 4000 4000 3000 3000 2000 2000 1000 1000 0 0 0 1000 2000 3000 4000 0 1000 2000 3000 4000 I TAV ( A ) 130 Fig. 7 Forward power loss vs. average forward current, square waveform, f = 50 Hz, T = 1/f 130 TC ( °C ) TC ( °C ) Fig. 6 Forward power loss vs. average forward current, sine waveform, f = 50 Hz, T = 1/f I TAV ( A ) 120 120 110 110 100 100 90 90 80 80 DC DC 70 70 270° ψ = 30° 60° 90° 120° 180° 60 ψ = 30° 60° 60 0 1000 2000 3000 4000 0 1000 2000 90° 120° 3000 I TAV ( A ) Fig. 8 Max. case temperature vs.average forward current, sine waveform, f = 50Hz, T = 1/f 180° 4000 I TAV ( A ) Fig. 9 Max. case temperature vs.average forward current, square waveform, f = 50Hz, T = 1/f ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1065-01 March 05 page 5 of 6 5STP 34H1601 RED WHITE Fig. 10 Device Outline Drawing. Related application notes: Doc. Nr Titel 5SYA2020 Design of RC-Snubber for Phase Control Applications 5SYA2034 Gate-drive Recommendations for PCT's 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1065-01 March 05