ABB 5SDD38H5000

VRSM
IF(AV)M
IF(RMS)
IFSM
VF0
rF
=
=
=
=
=
=
5000
3810
5990
45×103
0.903
0.136
Rectifier Diode
V
A
A
A
V
mΩ
5SDD 38H5000
Doc. No. 5SYA1177-00 Feb. 06
• Optimum power handling capability
• Very low on-state losses
Blocking
Maximum rated values Note 1
Parameter
Symbol Conditions
Value
Unit
Repetitive peak reverse voltage
VRRM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
5000
V
Non-repetitive peak reverse voltage
VRSM
f = 50 Hz, tp = 10ms, Tj = -40...160°C
5000
V
Characteristic values
Parameter
Symbol Conditions
Max. (reverse) leakage current
IRRM
min
typ
VRRM, Tj = 160°C
max
110
Unit
mA
Derating factor of 0.13% per °C is applicable for Tj below 0 °C.
Mechanical data
Maximum rated values Note 1
Parameter
Symbol Conditions
Mounting force
FM
Acceleration
a
Acceleration
a
min
45
typ
50
max
Unit
55
kN
Device unclamped
50
m/s
2
Device clamped
100
m/s
2
Characteristic values
Parameter
Symbol Conditions
min
typ
max
Weight
m
Housing thickness
H
Surface creepage distance
DS
40
mm
Air strike distance
Da
20
mm
0.9
FM = 50 kN, Ta = 25 °C
25.5
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Unit
kg
26.5
mm
5SDD 38H5000
On-state
Maximum rated values Note 1
Parameter
Symbol Conditions
Max. average on-state
current
IF(AV)M
Max. RMS on-state current
IF(RMS)
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
Max. peak non-repetitive
surge current
IFSM
Limiting load integral
I2t
min
typ
50 Hz, Half sine wave, TC = 85 °C
tp = 10 ms, Tj = 160°C,
VR = 0 V
max
Unit
3810
A
5990
A
3
A
6
A2s
3
A
10.1×10
6
A2s
max
Unit
45×10
9.6×10
tp = 8.3 ms, Tj = 160°C,
VR = 0 V
48×10
Characteristic values
Parameter
Symbol Conditions
min
typ
On-state voltage
VF
IF = 4000 A, Tj = 160°C
1.43
V
Threshold voltage
V(T0)
0.903
V
Slope resistance
rT
Tj = 160°C
IT = 6000...18000 A
0.136
mΩ
max
Unit
Switching
Characteristic values
Parameter
Symbol Conditions
Recovery charge
Qrr
diF/dt = -30 A/µs, VR = 100 V
IFRM = 2000 A, Tj = 160°C
min
typ
9000
µAs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1177-00 Feb. 06
page 2 of 6
5SDD 38H5000
Thermal
Maximum rated values
Note 1
Parameter
Symbol Conditions
min
max
Unit
Operating junction
temperature range
Tvj
-40
160
°C
-40
160
°C
max
Unit
Double-side cooled
Fm = 45...55 kN
8
K/kW
Rth(j-c)A
Anode-side cooled
Fm = 45...55 kN
14.5
K/kW
Rth(j-c)C
Cathode-side cooled
Fm = 45...55 kN
18.0
K/kW
Double-side cooled
Fm = 45...55 kN
2.5
K/kW
Single-side cooled
Fm = 45...55 kN
5.0
K/kW
Storage temperature range Tstg
typ
Characteristic values
Symbol Conditions
Thermal resistance junction Rth(j-c)
to case
Thermal resistance case to Rth(c-h)
heatsink
Rth(c-h)
min
Analytical function for transient thermal
impedance:
n
Zth(j-c) (t) = ∑ R th i (1 - e
- t/τ i
)
i =1
i
1
2
3
4
Rth i(K/kW)
4.533
2.255
0.868
0.345
τi(s)
0.4406
0.1045
0.0092
typ
9
0.0022
Transient therm al im pedance
junction to case Zthjc ( K/kW )
Parameter
8
7
6
5
4
3
2
1
0
0,001
0,01
0,1
1
10
Square w ave pulse duration t d ( s )
Fig. 1 Transient thermal impedance junction-to-case
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1177-00 Feb. 06
page 3 of 6
5SDD 38H5000
IF ( A )
20000
18000
T j = 25 °C
16000
160 °C
14000
12000
10000
8000
6000
4000
2000
0
0
1
2
3
VF (V)
4
Fig. 2 Max. on-state characteristics
90
∫ i2dt
80
IFSM ( kA )
IFSM ( kA )
20
i 2dt (106 A2s)
50
100
40
15
70
30
60
VR = 0 V
10
20
50
40
V R ≤ 0.5 V RRM
5
10
I FSM
30
20
1
10
t ( ms )
0
100
Fig. 3 Surge forward current vs. pulse length, half
sine wave, single pulse, VR = 0 V
0
1
10
100
Number n of cycles at 50 Hz
Fig. 4 Surge forward current vs. number of pulses,
half sine wave, VR = 0 V
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1177-00 Feb. 06
page 4 of 6
PT ( W )
5SDD 38H5000
PT ( W )
10000
10000
ψ = 60°
120° 180°
9000
8000
DC
7000
ψ = 30°
270°
7000
DC
6000
5000
5000
4000
4000
3000
3000
2000
2000
1000
1000
0
0
1000
2000
3000
0
4000
5000
I FAV ( A )
Fig. 5 Forward power loss vs. average forward
current, sine waveform, f = 50 Hz
1000
2000
3000
4000
5000
I FAV ( A )
Fig. 6 Forward power loss vs. average forward
current, square waveform, f = 50 Hz
160
TC ( °C )
TC ( °C )
180°
8000
6000
0
60° 90° 120°
9000
160
140
140
120
120
100
100
DC
DC
80
270°
80
ψ = 60°
60
0
1000
2000
120°
ψ = 30°
180°
60
3000
4000
5000
0
1000
60°
2000
90° 120°
3000
4000
5000
I FAV ( A )
I FAV ( A )
Fig. 7 Max. case temperature vs aver. forward
current, sine waveform, f = 50 Hz
180°
Fig. 8 Max. case temperature vs aver. forward
current, square waveform, f = 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1177-00 Feb. 06
page 5 of 6
5SDD 38H5000
Fig. 9 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise
Related documents:
5SYA 2020
Design of RC-Snubbers for Phase Control Applications
5SYA 2029
Designing Large Rectifiers with High Power Diodes
5SYA 2036
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Please refer to http://www.abb.com/semiconductors for actual versions.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1177-00 Feb. 06