AMS9435A P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-5.3A , RDS(ON)=65mΩ(typ.) @ VGS=-10V RDS(ON)=100mΩ(typ.) @ VGS=-4.5V • • • Super High Dense Cell Design 1 S Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant) ( 1, 2, 3 ) S S S Applications • 2 S Power Management in Notebook Computer, Portable Equipment and Battery Powered (4) G System s ; LCD-TV ; LCD-monitor ; Net-card DD D (5,6,7,8) P-Channel MOSFET Ordering and Marking Information 1 Advanced Monolithic Systems http://www.ams-semitech.com 3 S 4 G AMS9435A Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage Temperature Range PD* Maximum Power Dissipation RθJA* Unit V -5.3 VGS=-10V A -20 A -2 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics (TA = 25°C unless otherwise noted) AMS9435A Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a VSD a Test Condition VGS=0V, IDS=-250µA Gate Leakage Current Gate Charge Characteristics Qg Total Gate Charge Max. -30 -1 -30 -1 Unit V TA=25°C VDS=VGS, IDS=-250µA Diode Forward Voltage Typ. VDS=-24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance Min. -1.5 µA -2 V VGS=±25V, VDS=0V ±100 nA VGS=-10V, IDS=-4.6A 65 60 mΩ 100 95 VGS=-4.5V, IDS=-2A ISD=-2A, VGS=0V -0.9 -1.3 27 32 V b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS= -15V, VGS=-10V, IDS= - 5A 6.5 2 Advanced Monolithic Systems 4 http://www.ams-semitech.com nC AMS9435A Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted AMS9435A Symbol Parameter Test Condition Min. Typ. Max. Unit b Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V, VDS=-15V, Frequency=1.0MHz 545 pF 85 55 12 VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω 8 15 25 46 5 10 ns 56 ns 30 nC IDS=-4.6A, dlSD/dt=100A/µs Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. 3 Advanced Monolithic Systems http://www.ams-semitech.com AMS9435A Typical Characteristics Drain Current Power Dissipation 2.5 6 5 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 0.5 4 3 2 1 o o 0.0 TA=25 C,VG=-10V TA=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 10 Normalized Transient Thermal Resistance Rd s(o n) Lim it -ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 100 300µs 1ms 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0 0.1 1 10 2 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 1 10 30 Square Wave Pulse Duration (sec) 4 Advanced Monolithic Systems 0.1 http://www.ams-semitech.com AMS9435A Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 20 140 VGS= -5, -6, -7, -8, -9, -10V -ID - Drain Current (A) 16 130 RDS(ON) - On - Resistance (mΩ) 18 -4V 14 12 10 8 -3V 6 4 2 0 120 110 VGS= -4.5V 100 90 80 70 VGS= -10V 60 50 40 30 20 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 20 1.6 IDS = -250µA 18 Normalized Threshold Voltage 1.4 -ID - Drain Current (A) 16 14 12 10 8 o Tj=125 C 6 o o Tj=25 C 4 Tj=-55 C 1.2 1.0 0.8 0.6 0.4 2 0 0 1 2 3 4 0.2 -50 -25 5 -VGS - Gate - Source Voltage (V) 0 25 75 100 125 150 Tj - Junction Temperature (°C) 5 Advanced Monolithic Systems 50 http://www.ams-semitech.com AMS9435A Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 2.00 VGS = -10V 10 IDS = -4.6A 1.50 o -IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 Tj=150 C o Tj=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 52mΩ 0 25 50 0.1 0.0 75 100 125 150 0.9 1.2 1.5 1.8 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VD= -15V 9 ID= -4.6A -VGS - Gate-source Voltage (V) 600 Ciss C - Capacitance (pF) 0.6 Tj - Junction Temperature (°C) 700 500 400 300 200 Coss 100 Crss 0 0.3 0 5 10 15 20 25 8 7 6 5 4 3 2 1 0 30 0 2 4 8 10 QG - Gate Charge (nC) -VDS - Drain - Source Voltage (V) 6 Advanced Monolithic Systems 6 http://www.ams-semitech.com 12 AMS9435A Packaging Information E e1 0.015X45 SOP-8 pin (Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Millimeters Inches Min. Max. Min. Max. 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 A e2 φ1 1.27BSC 0° 0.50BSC 8° 0° 7 Advanced Monolithic Systems http://www.ams-semitech.com 8° AMS9435A Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application A 330±1 B 62 ± 1.5 SOP-8 F 5.5 ± 0.1 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 P 8± 0.1 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 8 Advanced Monolithic Systems http://www.ams-semitech.com Devices Per Reel 2500