AOSMD AOU436

AOU436
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU436 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOU436 is Pb-free
(meets ROHS & Sony 259 specifications). AOU436L
is a Green Product ordering option. AOU436 and
AOU436L are electrically identical.
VDS (V) = 30V
ID = 57A (VGS = 10V)
RDS(ON) < 8.5mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B,
TC=25°C
TC=100°C
ID
IDM
Repetitive avalanche energy L=0.1mH C
TC=25°C
TC=100°C
Junction and Storage Temperature Range
±20
V
A
Alpha & Omega Semiconductor, Ltd.
A
40
100
IAR
30
A
EAR
143
mJ
PD
50
25
W
-55 to 175
°C
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
Units
V
57
B
Pulsed Drain Current
Avalanche Current C
Power Dissipation B
Maximum
30
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
Max
Units
100
2
125
3
°C/W
°C/W
AOU436
Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
85
TJ=55°C
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
5
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
µA
100
nA
1.8
3
V
5.4
8.5
8.1
9.7
9.8
14
mΩ
1
V
85
A
1825
pF
A
88
0.71
1520
VGS=0V, VDS=15V, f=100kHz
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=24V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
306
pF
214
pF
0.47
0.7
Ω
31.9
39
nC
16.2
20
nC
5
nC
Gate Drain Charge
9.6
nC
7
ns
11.6
ns
24.2
ns
7.7
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
23.8
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
15.7
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
30
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOU436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
60
10V
50
VDS=5V
4V
20
125°C
40
ID(A)
ID (A)
3.5V
10
30
20
25°C
10
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
14
1.8
Normalized On-Resistance
ID=20A
12
RDS(ON) (mΩ)
VGS=4.5V
10
8
VGS=10V
6
1.6
VGS=10V
1.4
VGS=4.5V
1.2
1
4
0
10
20
30
40
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
16
1.0E+01
ID=20A
125°C
1.0E+00
12
125°C
IS (A)
RDS(ON) (mΩ)
25
8
1.0E-01
25°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOU436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2500
10
VDS=30V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
1500
1000
Coss
Crss
500
0
0
0
5
10
15
20
25
30
35
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
TJ(Max)=175°C
TA=25°C
100µs
10.0
1ms
DC
TJ(Max)=175°C
TA=25°C
1.0
0.1
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
D=Ton/T
TJ,PK=Tc+PDM.ZθJc.RθJc
RθJC=3°C/W
80
60
40
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VDS (Volts)
10
Power (W)
10µs
100.0
ID (Amps)
10
100
RDS(ON)
limited
ZθJc Normalized Transient
Thermal Resistance
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOU436
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
tA =
50
L ⋅ ID
BV − VDD
Power Dissipation (W)
ID(A), Peak Avalanche Current
60
40
30
20
TA=25°C
10
0
0.00001
0.001
0.01
20
60
40
20
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
80
Current rating ID(A)
40
0
0.0001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
60
175
175