AOU436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOU436 is Pb-free (meets ROHS & Sony 259 specifications). AOU436L is a Green Product ordering option. AOU436 and AOU436L are electrically identical. VDS (V) = 30V ID = 57A (VGS = 10V) RDS(ON) < 8.5mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B, TC=25°C TC=100°C ID IDM Repetitive avalanche energy L=0.1mH C TC=25°C TC=100°C Junction and Storage Temperature Range ±20 V A Alpha & Omega Semiconductor, Ltd. A 40 100 IAR 30 A EAR 143 mJ PD 50 25 W -55 to 175 °C TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V 57 B Pulsed Drain Current Avalanche Current C Power Dissipation B Maximum 30 Steady-State Steady-State Symbol RθJA RθJL Typ Max Units 100 2 125 3 °C/W °C/W AOU436 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 85 TJ=55°C VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd 5 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A µA 100 nA 1.8 3 V 5.4 8.5 8.1 9.7 9.8 14 mΩ 1 V 85 A 1825 pF A 88 0.71 1520 VGS=0V, VDS=15V, f=100kHz Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ mΩ S 306 pF 214 pF 0.47 0.7 Ω 31.9 39 nC 16.2 20 nC 5 nC Gate Drain Charge 9.6 nC 7 ns 11.6 ns 24.2 ns 7.7 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 23.8 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 15.7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 30 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 60 10V 50 VDS=5V 4V 20 125°C 40 ID(A) ID (A) 3.5V 10 30 20 25°C 10 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 14 1.8 Normalized On-Resistance ID=20A 12 RDS(ON) (mΩ) VGS=4.5V 10 8 VGS=10V 6 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1 4 0 10 20 30 40 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 16 1.0E+01 ID=20A 125°C 1.0E+00 12 125°C IS (A) RDS(ON) (mΩ) 25 8 1.0E-01 25°C 1.0E-02 1.0E-03 25°C 1.0E-04 1.0E-05 4 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOU436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500 10 VDS=30V ID=20A 2000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1500 1000 Coss Crss 500 0 0 0 5 10 15 20 25 30 35 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 TJ(Max)=175°C TA=25°C 100µs 10.0 1ms DC TJ(Max)=175°C TA=25°C 1.0 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=Tc+PDM.ZθJc.RθJc RθJC=3°C/W 80 60 40 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) VDS (Volts) 10 Power (W) 10µs 100.0 ID (Amps) 10 100 RDS(ON) limited ZθJc Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 tA = 50 L ⋅ ID BV − VDD Power Dissipation (W) ID(A), Peak Avalanche Current 60 40 30 20 TA=25°C 10 0 0.00001 0.001 0.01 20 60 40 20 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 80 Current rating ID(A) 40 0 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 0 60 175 175