AP2310AGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
BVDSS
65V
RDS(ON)
80mΩ
ID
3A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
AP2310A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-23 package with good thermal performance is widely preferred for
all commercial-industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch applications.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
65
V
+20
V
3
3
A
3
2.3
A
12
A
1.38
W
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201206111
AP2310AGN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
65
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=3A
-
62
80
mΩ
VGS=4.5V, ID=2A
-
88
120
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.7
3
V
gfs
Forward Transconductance
VDS=10V, ID=3A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=3A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=30V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
td(on)
Turn-on Delay Time
VDS=30V
-
5
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=10V
-
3.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
460
740
pF
Coss
Output Capacitance
VDS=25V
-
35
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=1A, VGS=0V
Max. Units
1.3
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
19
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2310AGN-HF
12
16
o
12
10V
7.0V
6.0V
5.0V
V G = 4.0V
10
ID , Drain Current (A)
ID , Drain Current (A)
T A = 150 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
T A =25 C
8
8
6
4
4
2
0
0
0
2
4
6
0
8
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
Fig 2. Typical Output Characteristics
110
2.4
ID=3A
V G =10V
I D = 2A
T A = 25 o C
2.0
Normalized RDS(ON)
100
RDS(ON) (mΩ)
4
V DS , Drain-to-Source Voltage (V)
90
80
1.6
1.2
0.8
70
0.4
60
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4
1.6
T j =150 o C
Normalized VGS(th)
IS(A)
3
T j =25 o C
2
1.2
0.8
1
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2310AGN-HF
f=1.0MHz
600
I D = 3A
V DS =30V
500
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
400
300
4
200
2
100
C oss
C rss
0
0
0
4
8
12
16
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
Operation in this
area limited by
RDS(ON)
100us
1
1ms
10ms
0.1
0.01
100ms
1s
DC
T A =25 o C
Single Pulse
0.001
0.2
0.1
0.1
PDM
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270℃/W
0.02
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
3.2
ID , Drain Current (A)
VG
2.4
QG
4.5V
QGS
1.6
QGD
0.8
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Maximum Continuous Drain Current
Fig 12. Gate Charge Waveform
v.s. Ambient Temperature
4