AP9578GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
-60V
RDS(ON)
160mΩ
ID
G
-10A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9578GP) are available for low-profile applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-10
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-6
A
1
IDM
Pulsed Drain Current
-45
A
PD@TC=25℃
Total Power Dissipation
28
W
Linear Derating Factor
0.23
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
4.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
200629071-1/4
AP9578GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-5A
-
-
160
mΩ
VGS=-4.5V, ID=-3A
-
-
200
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-5A
-
6
-
S
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=-5A
-
10
16
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=-250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
VDS=-30V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-5A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
34
-
ns
tf
Fall Time
RD=6Ω
-
29
-
ns
Ciss
Input Capacitance
VGS=0V
-
760
1220
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
IS=-5A, VGS=0V
-
-
-1.2
V
IS=-5A, VGS=0V,
-
45
-
ns
dI/dt=-100A/µs
-
107
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9578GS/P
30
25
-10V
-7.0V
o
T C = 25 C
25
-10V
- 7 .0V
-5.0V
-4.5V
o
T C = 150 C
20
15
10
V G = -3.0 V
-ID , Drain Current (A)
-ID , Drain Current (A)
20
-5.0V
-4.5V
15
10
V G = -3.0 V
5
5
0
0
0
2
4
6
8
10
12
0
Fig 1. Typical Output Characteristics
4
6
8
10
12
Fig 2. Typical Output Characteristics
175
2.0
I D = -5 A
V G = - 10V
I D = -3 A
T C =25 ℃
1.6
Normalized R DS(ON)
165
155
RDS(ON) (m Ω)
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
145
1.2
0.8
135
125
0.4
2
4
6
8
10
-50
0
50
100
150
o
T j , Junction Temperature ( C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
15.0
Normalized VGS(th) (V)
12.5
-IS(A)
10.0
7.5
T j =150 o C
T j =25 o C
5.0
1.5
1.0
0.5
2.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9578GS/P
f=1.0MHz
12
1000
I D = -5A
V DS = -48V
-VGS , Gate to Source Voltage (V)
10
C iss
C (pF)
8
6
100
C oss
C rss
4
2
0
10
0
5
10
15
20
25
30
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
10
-ID (A)
100us
1ms
1
10ms
100ms
DC
o
T C =25 C
Single Pulse
0.1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3
b
e
L4
Millimeters
A
A2
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
XXXXXS
XXXXXGS
meet Rohs requirement
YWWSSS
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
L1
L
c
b
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.6
3.10
3.6
L4
14.70
15.50
16
L5
6.30
6.50
6.70
φ
3.50
3.60
3.70
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
Package Code
XXXXGP
meet Rohs requirement
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence