AP9962H/J
Advanced Power
Electronics Corp.
▼ Low On-resistance
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Single Drive Requirement
▼ Surface Mount Package
BVDSS
40V
RDS(ON)
20mΩ
ID
32A
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
GD
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9962J) are available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
32
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
20
A
1
IDM
Pulsed Drain Current
150
A
PD@TA=25℃
Total Power Dissipation
34.7
W
Linear Derating Factor
0.27
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
4.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
201028031
AP9962H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.1
-
V/℃
VGS=10V, ID=20A
-
-
20
mΩ
VGS=4.5V, ID=16A
-
-
30
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=20A
-
19
-
S
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=20A
-
13
21
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
VDS=20V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
38
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=1.0Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1170 1870
pF
Coss
Output Capacitance
VDS=25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=32A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
AP9962H/J
120
140
10V
8.0V
T C =25 o C
120
o
T C =150 C
ID , Drain Current (A)
ID , Drain Current (A)
100
6.0V
80
60
10V
8.0V
100
4.5V
40
80
6.0V
60
4.5V
40
20
20
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
6
7
8
0
1
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
36
1.8
I D =20A
T C =25 o C
I D =20A
V G =10V
1.6
Normalized RDS(ON)
32
28
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
24
20
16
1.4
1.2
1.0
0.8
12
0.6
3
4
5
6
7
8
9
10
11
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
30
2.2
25
2
VGS(th) (V)
IS(A)
20
15
o
T j =150 C
T j =25 o C
1.8
1.6
10
1.4
5
1.2
0
1
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9962H/J
f=1.0MHz
14
10000
I D =20A
V DS =20V
10
V DS =25V
Ciss
1000
V DS =32V
8
C (pF)
VGS , Gate to Source Voltage (V)
12
Coss
6
Crss
100
4
2
10
0
0
5
10
15
20
25
1
30
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
100
100us
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
10
10ms
100ms
1s
DC
o
1
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q