APTGL700U120D4G Single switch Trench + Field Stop IGBT4 Power Module VCES = 1200V IC = 700A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated 5 2 • • • • Kelvin emitter for easy drive M6 connectors for power M4 connectors for signal High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 910 700 1800 ±20 3000 Tj = 125°C 1200A@1150V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A July, 2010 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGL700U120D4G – Rev 1 Symbol VCES APTGL700U120D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Zero Gate Voltage Collector Current ICES VCE(sat) Collector Emitter Saturation Voltage VGE(th) Gate Threshold Voltage Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25°C IC = 600A Tj = 150°C VGE = VCE, IC = 24 mA Min Typ 5 1.8 2.2 5.8 Test Conditions Min Typ Max 4 2.2 Unit mA 6.5 V Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=600A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 600A RG = 1.8Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 600A RG = 1.8Ω VGE = ±15V TJ = 150°C VCE = 600V IC = 600A TJ = 150°C RG = 1.8Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 150°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data 37.2 2.3 2.04 nF 3.4 µC 160 30 340 ns 80 170 40 ns 450 170 66 mJ 66 mJ 2400 A Diode ratings and characteristics IF Maximum Reverse Leakage Current VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy IF = 600A VGE = 0V IF = 600A VR = 600V di/dt = 7000A/µs www.microsemi.com Min 1200 Typ Tj = 25°C Tj = 150°C TC = 80°C 600 Tj = 25°C 1.7 Tj = 150°C 1.65 Tj = 25°C 155 Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C 300 53 110 23.5 46 Max 250 2000 Unit V µA A 2.2 V July, 2010 IRRM Test Conditions ns µC mJ 2-5 APTGL700U120D4G – Rev 1 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTGL700U120D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 4000 -40 -40 -40 3 1 Typ Max 0.05 0.1 Unit °C/W V 175 125 125 5 2 350 °C N.m g www.microsemi.com 3-5 APTGL700U120D4G – Rev 1 July, 2010 D4 Package outline (dimensions in mm) APTGL700U120D4G Typical Performance Curve Output Characteristics (VGE=15V) 1200 Output Characteristics 1200 TJ = 150°C VGE=19V 900 TJ=25°C VGE=15V TJ=150°C IC (A) IC (A) 900 600 600 VGE=9V 300 300 0 0 0 1 2 3 4 0 1 2 VCE (V) VCE (V) Transfert Characteristics 1200 VCE = 600V VGE = 15V RG = 1.8 Ω TJ = 150°C TJ=25°C 120 E (mJ) IC (A) 90 600 TJ=150°C 300 4 Energy losses vs Collector Current 150 900 3 60 Eoff Er 30 Eon 0 0 5 6 7 8 9 10 11 12 0 13 300 Switching Energy Losses vs Gate Resistance 900 1200 Reverse Bias Safe Operating Area 120 1440 VCE = 600V VGE =15V IC = 600A TJ = 150°C 100 80 Eon 1200 960 Eoff IC (A) E (mJ) 600 IC (A) VGE (V) 60 720 480 Er 40 VGE=15V TJ=150°C RG=1.8 Ω 240 20 0 0 2.5 5 7.5 Gate Resistance (ohms) 10 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT D = 0.9 0.7 July, 2010 0.04 0.5 0.02 0.3 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGL700U120D4G – Rev 1 Thermal Impedance (°C/W) 0.06 APTGL700U120D4G Forward Characteristic of diode 1200 VCE=600V D=50% RG=1.8 Ω TJ=150°C Tc=75°C 120 90 60 900 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 150 ZVS 300 ZCS 30 600 TJ=150°C Hard switching 0 TJ=25°C 0 0 150 300 450 600 750 900 0 0.4 0.8 IC (A) 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 Diode 0.1 D = 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGL700U120D4G – Rev 1 July, 2010 Rectangular Pulse Duration in Seconds