isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDX85/A/B/C DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX85; 60V(Min)- BDX85A 80V(Min)- BDX85B; 100V(Min)- BDX85C ·Complement to Type BDX86/A/B/C APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BDX85 45 BDX85A 60 Collector-Base Voltage UNIT n c . i m e V s c s i . w BDX85B 80 BDX85C 100 w w BDX85 45 BDX85A 60 BDX85B 80 BDX85C 100 Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current 100 mA PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.75 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDX85/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDX85 45 BDX85A 60 TYP. MAX IC= 100mA; IB= 0 UNIT V BDX85B 80 BDX85C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 40mA 4.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 80mA 4.0 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 3V 2.8 V BDX85 VCB= 45V; IE= 0 VCB= 45V; IE= 0; TC= 150℃ 0.5 5.0 BDX85A VCB= 60V; IE= 0 VCB= 60V; IE= 0; TC= 150℃ 0.5 5.0 BDX85B VCB= 80V; IE= 0 VCB= 80V; IE= 0; TC= 150℃ 0.5 5.0 BDX85C VCB= 100V; IE= 0 VCB= 100V; IE= 0; TC= 150℃ 0.5 5.0 BDX85 VCE= 22V; IB= 0 BDX85A VCE= 30V; IB= 0 BDX85B VCE= 40V; IB= 0 BDX85C VCE= 50V; IB= 0 ICBO ICEO Collector Cutoff Current B B n c . i m e s c is B . w w w Collector Cutoff Current mA B B 1.0 mA 2.0 mA B B IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 3V 1000 hFE-2 DC Current Gain IC= 4A; VCE= 3V 750 hFE-3 DC Current Gain IC= 8A; VCE= 4V 200 isc Website：www.iscsemi.cn 2 18000