ETC TSL210

TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
640 × 1 Sensor-Element Organization
200 Dots-Per-Inch (DPI) Sensor Pitch
High Linearity and Uniformity
Wide Dynamic Range . . . 2000:1 (66 dB)
Output Referenced to Ground
Low Image Lag . . . 0.5% Typ
Operation to 5 MHz
Single 5-V Supply
PACKAGE
(TOP VIEW)
1 VDD
2 CLK
3 SI1
4 AO1
5 SO1
6 SI2
7 AO2
8 SO2
9 GND
10 SI3
11 AO3
12 SO3
13 SI4
14 AO4
15 SO4
16 SI5
17 AO5
18 SO5
Description
The TSL210 linear sensor array consists of five
sections of 128 photodiodes, each with
associated charge amplifier circuitry, running from
a common clock. These sections can be
connected to form a contiguous 640 × 1 pixel
array. Device pixels measure 120 µm (H) by
70 µm (W) with 125-µm center-to-center pixel
spacing. Operation is simplified by internal logic
that requires only a serial input (SI1 through SI5)
for each section and a common clock for the five
sections.
The device is intended for use in a wide variety of
applications including contact imaging, mark and
code reading, bar-code reading, edge detection
and positioning, OCR, level detection, and linear
and rotational encoding.
Functional Block Diagram (each section)
Pixel 1
Pixel
2
Integrator
Reset
Pixel
3
Pixel
128
Analog
Bus
VDD
Output
Amplifier
_
+
Sample/
Output
AO
GND
RL
(External
330 Load)
Switch Control Logic
Gain
Trim
Q1
Q2
Q3
Q128
SO
CLK
128-Bit Shift Register
SI
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Copyright 2002, TAOS Inc.
Texas Advanced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 Plano, TX 75074 (972)
673-0759
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
Terminal Functions
TERMINAL
NAME
AO1
NO.
I/O
DESCRIPTION
4
O
Analog output of section 1.
AO2
7
O
Analog output of section 2.
AO3
11
O
Analog output of section 3.
AO4
14
O
Analog output of section 4.
AO5
17
O
Analog output of section 5.
CLK
2
I
Clock input for all sections. The clock controls the charge transfer, pixel output, and reset.
GND
9
SI1
3
I
SI1 defines the start of the data out sequence for section 1.
SI2
6
I
SI2 defines the start of the data out sequence for section 2.
SI3
10
I
SI3 defines the start of the data out sequence for section 3.
SI4
13
I
SI4 defines the start of the data out sequence for section 4.
SI5
16
I
SI5 defines the start of the data out sequence for section 5.
SO1
5
O
SO1 provides the signal to drive the SI2 input in serial mode or end of data for section 1 in parallel mode.
SO2
8
O
SO2 provides the signal to drive the SI3 input in serial mode or end of data for section 2 in parallel mode.
SO3
12
O
SO3 provides the signal to drive the SI4 input in serial mode or end of data for section 3 in parallel mode.
SO4
15
O
SO4 provides the signal to drive the SI5 input in serial mode or end of data for section 4 in parallel mode.
SO5
18
O
SO5 provides the signal to drive the SI input of another device for cascading or as an end of data indication.
VDD
1
Ground (substrate). All voltages are referenced to the substrate.
Supply voltage for both analog and digital circuits.
Detailed Description
The device consists of five sections of 128 photodiodes (called pixels — 640 total in the device) arranged in a
linear array. Each section has its own signal input and output lines, and all five sections are connected to a
common clock line. Light energy impinging on a pixel generates photocurrent that is then integrated by the active
integration circuitry associated with that pixel.
During the integration period, a sampling capacitor connects to the output of the integrator through an analog
switch. The amount of charge accumulated at each pixel is directly proportional to the light intensity on that pixel
and the integration time. The voltage output developed for each pixel is according to the following relationship:
Vout = Vdrk + (Re) (Ee) (tint)
where:
Vout
Vdrk
Re
Ee
tint
is
is
is
is
is
Copyright 2002, TAOS Inc.
the analog output voltage for white condition
the analog output voltage for dark condition
the device responsivity for a given wavelength of light given in V/(µJ/cm2)
the incident irradiance in µW/cm2
integration time in seconds
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
The output and reset of the integrators in each section are controlled by a 128-bit shift register and reset logic.
An output cycle is initiated by clocking in a logic 1 on SI. As the SI pulse is clocked through the shift register,
the charge stored on the sampling capacitors of each pixel is sequentially connected to a charge-coupled output
amplifier that generates a voltage on analog output AO (given above). After being read, the pixel integrator is
then reset, and the next integration period begins for that pixel. On the 129th clock rising edge, the SO pulse
is clocked out on SO signifying the end of the read cycle. The section is then ready for another read cycle. The
SO of each section can be connected to SI on the next section in the array (Figure 4). SO can be used to signify
the read is complete.
AO is driven by a source follower that requires an external pulldown resistor (330-Ω typical). The output is
nominally 0 V for no light input, 2 V for normal white-level, and 3.4 V for saturation light level. When the device
is not in the output phase, AO is in a high impedance state.
A 0.1 µF bypass capacitor should be connected between VDD and ground as close as possible to the device.
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
Absolute Maximum Ratings†
Supply voltage range, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
Input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3V
Input clamp current, IIK (VI < 0 or VI > VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20 mA to 20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 mA to 25 mA
Voltage range applied to any output in the high impedance or
power-off state, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VDD + 0.3V
Continuous output current, IO (VO = 0 to VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 mA to 25 mA
Continuous current through VDD or GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –100 mA to 100 mA
Analog output current range, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 mA to 25 mA
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Lead temperature on connection pad for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
ESD tolerance, human body model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000 V
†
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Recommended Operating Conditions (see Figure 1 and Figure 2)
Supply voltage, VDD
MIN
NOM
4.5
5
MAX
UNIT
5.5
V
Input voltage, VI
0
VDD
V
High-level input voltage, VIH
Low-level input voltage, VIL
2
VDD
V
Wavelength of light source, λ
Clock frequency, fclock
Sensor integration time, serial, tint
0
0.8
400
1000
V
nm
5
5000
kHz
0.128
100
ms
Sensor integration time, parallel, tint
Load capacitance, CL
0.026
100
ms
330
pF
Load resistance, RL
300
4700
Ω
0
70
°C
Operating free-air temperature, TA
NOTE 1: SI must go low before the rising edge of the next clock pulse.
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
Electrical Characteristics at fclock = 200 kHz, VDD = 5 V, TA = 25°C, λp = 640 nm, tint = 5 ms,
RL = 330 Ω, Ee = 18µW/cm2 (unless otherwise noted) (see Note 3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
1.6
2
2.4
0
0.05
0.15
V
±20
%
VOUT
Analog output voltage (white, average over 640 pixels)
See Note 2
VDRK
Analog output voltage (dark, average over 640 pixels)
Ee = 0
PRNU
Pixel response nonuniformity
See Note 4
Nonlinearity of analog output voltage
See Note 5
±0.4%
Output noise voltage
See Note 6
1
Re
Responsivity
SE
Saturation exposure
VSAT
Analog output saturation voltage
DSNU
Dark signal nonuniformity
IL
Image lag
IDD
Supply current
IIH
High-level input current
IIL
Low-level input current
16
See Note 7
22
2.5
mVrms
28
V/
(µJ/
cm2)
nJ/cm 2
3.4
0.04
V
FS
155
All pixels, Ee = 0, See Note 8
See Note 9
UNIT
V
0.12
V
160
mA
VI = VDD
10
µA
VI = 0
10
µA
0.5
125
IO = 50 µA
4.5
%
4.95
VOH
O
High level output voltage
High-level
voltage, SO1 – SO5
VOL
O
Low level output voltage,
Low-level
voltage SO1 – SO5
Ci(SI)
Input capacitance, SI
20
pF
Ci(CLK)
Input capacitance, CLK
50
pF
IO = 4 mA
4.6
IO = 50 µA
0.01
IO = 4 mA
0.4
V
0.1
V
NOTES: 2. The array is uniformly illuminated with a diffused LED source having a peak wavelength of 640 nm.
3. Clock duty cycle is assumed to be 50%.
4. PRNU is the maximum difference between the voltage from any single pixel and the average output voltage from all pixels of the
device under test when the array is uniformly illuminated.
5. Nonlinearity is defined as the maximum deviation from a best-fit straight line over the dark-to-white irradiance levels, as a percent
of analog output voltage (white).
6. RMS noise is the standard deviation of a single-pixel output under constant illumination as observed over a 5-second period.
7. Minimum saturation exposure is calculated using the minimum Vsat, the maximum Vdrk, and the maximum Re.
8. DSNU is the difference between the maximum and minimum output voltage in the absence of illumination.
9. Image lag is a residual signal left in a pixel from a previous exposure. It is defined as a percent of white-level signal remaining after
a pixel is exposed to a white condition followed by a dark condition:
IL V out (IL) V drk
V out (white) V drk
100
Timing Requirements (see Figure 1 and Figure 2)
MIN
tsu(SI)
Setup time, serial input (see Note 10)
th(SI)
Hold time, serial input (see Note 10 and Note 11)
tw
tr, tf
NOM
MAX
UNIT
20
ns
0
ns
Pulse duration, clock high or low
50
ns
Input transition (rise and fall) time
0
500
ns
NOTES: 10. Input pulses have the following characteristics: tr = 6 ns, tf = 6 ns.
11. SI must go low before the rising edge of the next clock pulse.
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
Dynamic Characteristics over recommended ranges of supply voltage and operating free-air
temperature (see Figure 2)
PARAMETER
TEST CONDITIONS
Analog output settling time to ±1%
ts
MIN
CL = 10 pF
TYP
185
MAX
UNIT
ns
TYPICAL CHARACTERISTICS
CLK
SI1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
129 Clock Cycles
AO
Hi-Z
Hi-Z
Figure 1. Timing Waveforms (each section)
tw
1
2
128
129
5V
2.5 V
CLK
0V
tsu(SI)
5V
SI
50%
0V
th(SI)
ts
AO
ts
Pixel 1
Pixel 128
Figure 2. Operational Waveforms (each section)
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
TYPICAL CHARACTERISTICS
PHOTODIODE SPECTRAL RESPONSIVITY
1
TA = 25°C
Normalized Responsivity
0.8
0.6
0.4
0.2
0
300
400
500
600
700
800
900
1000 1100
λ – Wavelength – nm
Figure 3
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
APPLICATION INFORMATION
TSL210
TSL210
SERIAL
PARALLEL
1 VDD
1 VDD
2 CLK
2 CLK
Input
3 SI1
3 SI1
Output
4 AO1
Input
4 AO1
5 SO1
5 SO1
6 SI2
6 SI2
7 AO2
7 AO2
8 SO2
8 SO2
9 GND
9 GND
10 SI3
10 SI3
11 AO3
11 AO3
12 SO3
12 SO3
13 SI4
13 SI4
14 AO4
14 AO4
15 SO4
15 SO4
16 SI5
16 SI5
17 AO5
17 AO5
18 SO5
18 SO5
Output 1
Output 2
Output 3
Output 4
Output 5
RL
330 Ω
RL
330 Ω
Figure 4. Connection Diagrams
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
MECHANICAL INFORMATION
SIDE VIEW
22.30
21.80
TOP VIEW
4.01
3.81
Pin 1
17
18
2.54
0.69
0.53
2
2.29
12.95
12.45
6.15
5.64
89.92
89.66
47.46
47.20
Pixel 1
94.125
93.875
Pixel 640
SIDE VIEW
CROSS SECTION
Cover Glass
0.69
3.30
3.05
1.22
0.97
Bonded Die
NOTES: A.
B.
C.
D.
Bypass Capacitor
All linear dimensions are in millimeters.
Pixel centers are located along the center line of the mounting holes.
Cover glass index of refraction is 1.52.
This drawing is subject to change without notice.
Figure 5. TSL210 Mechanical Specifications
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TSL210
640 × 1 LINEAR SENSOR ARRAY
TAOS039 – AUGUST 2002
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
LUMENOLOGY is a registered trademark, and TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of
Texas Advanced Optoelectronic Solutions Incorporated.
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