SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09BP Top View N-Channel MOSFET SUP70N03-09BP ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 100_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation V 70b TC = 25_C Continuous Drain Current (TJ = 175_C) _ Unit ID 50 IDM 200 IAR 30 A L = 0.1 mH EAR 61 mJ TC = 25_C PD 93b W TJ, Tstg –55 to 175 _C Symbol Limit Unit Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction-to-Case Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W 1.6 Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71229 S-20102—Rev. B, 11-Mar-02 www.vishay.com 1 SUP/SUB70N03-09BP New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, IDS = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 IDSS ID(on) V VDS = 24 V, VGS = 0 V, TJ = 125_C 50 VDS = 24 V, VGS = 0 V, TJ = 175_C 150 VDS = 5 V, VGS = 10 V 70 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) gfs 0.0135 VGS = 10 V, ID = 30 A, TJ = 175_C 0.017 0.010 20 mA m 0.009 VGS = 10 V, ID = 30 A, TJ = 125_C VDS = 15 V, ID = 30 A nA A 0.007 VGS = 4.5 V, ID = 20 A Forward Transconductancea 2.0 W 0.013 45 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 1500 VGS = 0 V, VDS = 25 V, f = 1 MHz 530 pF 240 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 6 Turn-On Delay Timec td(on) 10 18 tr VDD = 15 V, RL = 0.21 W 8 15 td(off) ID ] 70 A, VGEN = 10 V, RG = 2.5 W 25 45 tf 9 16 Rg 2 Rise Timec Turn-Off Delay Timec Fall Timec Gate Resistance 15.5 VDS = 15 V, VGS = 5 V, ID = 70 A 19 5 nC ns W Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 70 Pulsed Current ISM 200 Forward Voltagea VSD IF = 70 A, VGS = 0 V 1.1 1.5 V trr IF = 70 A, di/dt = 100 A/ms 30 60 ns Reverse Recovery Time A Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71229 S-20102—Rev. B, 11-Mar-02 SUP/SUB70N03-09BP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 VGS = 10 thru 6 V TC = –55_C 160 150 I D – Drain Current (A) I D – Drain Current (A) 5V 120 4V 80 3V 40 25_C 100 125_C 50 1, 2 V 0 0 0 2 4 6 8 0 10 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.025 TC = –55_C r DS(on) – On-Resistance ( W ) g fs – Transconductance (S) 80 25_C 60 125_C 40 20 0 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0.000 0 20 40 60 80 100 120 0 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 2400 10 V GS – Gate-to-Source Voltage (V) 2000 C – Capacitance (pF) 60 Ciss 1600 1200 Coss 800 Crss 400 0 VDS = 15 V ID = 70 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71229 S-20102—Rev. B, 11-Mar-02 30 0 6 12 18 24 30 Qg – Total Gate Charge (nC) www.vishay.com 3 SUP/SUB70N03-09BP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on) – On-Resistance ( W) (Normalized) VGS = 10 V ID = 30 A 1.2 0.8 TJ = 150_C TJ = 25_C 10 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) 0 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 45 ID = 250 mA V(BR)DSS (V) 40 35 30 25 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) www.vishay.com 4 Document Number: 71229 S-20102—Rev. B, 11-Mar-02 SUP/SUB70N03-09BP New Product Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 80 Limited by rDS(on) 10 ms 100 I D – Drain Current (A) I D – Drain Current (A) 60 40 20 0 100 ms 1 ms 10 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Document Number: 71229 S-20102—Rev. B, 11-Mar-02 www.vishay.com 5