Si3552DV Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) N-Channel 30 P Channel P-Channel - 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V 2.5 0.175 @ VGS = 4.5 V 2.0 0.200 @ VGS = - 10 V - 1.8 0.360 @ VGS = - 4.5 V - 1.2 TSOP-6 Top View 3 mm D TrenchFETr Power MOSFET D 100% Rg Tested D1 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 S2 G2 G1 2.85 mm Ordering Information: Si3552DV-T1 S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 30 - 30 Gate-Source Voltage VGS "20 "20 2.5 - 1.8 a b Continuous Drain Current (TJ = 150_C)a, TA = 25_C TA = 70_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b TA = 25_C a b Maximum Power Dissipationa, TA = 70_C Operating Junction and Storage Temperature Range ID 2.0 - 1.2 IDM 8 -7 IS 1.05 - 1.05 1.15 PD V A W 0.73 TJ, Tstg Unit - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Lead Symbol t v 5 sec Steady State Steady State RthJA RthJL Typical Maximum 93 110 130 150 75 90 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board. b. t v 5 sec Document Number: 70971 S-31725—Rev. B, 18-Aug-03 www.vishay.com 1 Si3552DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body Zero Gate Voltage Drain Current On State Drain Currenta On-State Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = VGS, ID = 250 mA N-Ch 1.0 VDS = VGS, ID = - 250 mA P-Ch - 1.0 VDS = 0 V, V VGS = "20 V V N-Ch "100 P-Ch "100 VDS = 24 V, VGS = 0 V N-Ch 1 VDS = - 24 V, VGS = 0 V P-Ch -1 VDS = 24 V, VGS = 0 V, TJ = 55_C N-Ch 5 VDS = - 24 V, VGS = 0 V, TJ = 55_C P-Ch VDS = 5 V, VGS = 10 V N-Ch 5 VDS = - 5 V, VGS = - 10 V P-Ch -5 nA mA -5 A VGS = 10 V, ID = 2.5 A N-Ch 0.085 0.105 VGS = - 10 V, ID = - 1.8 A P-Ch 0.165 0.200 VGS = 4.5 V, ID = 2.0 A N-Ch 0.140 0.175 VGS = - 4.5 V, ID = - 1.2 A P-Ch 0.298 0.360 VDS = 10 V, ID = 2.5 A N-Ch 4.3 VDS = - 15 V, ID = - 1.8 A P-Ch 2.4 IS = 1.05 A, VGS = 0 V N-Ch 0.81 1.10 IS = - 1.05 A, VGS = 0 V P-Ch - 0.83 - 1.10 N-Ch 2.1 3.2 3.6 W S V Dynamicb Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Rg Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off N-Channel VDS = 15 V, VGS = 5 V, ID = 1.8 A P-Channel VDS = - 15 V V, VGS = - 5 V, V ID = - 1.8 18A td(on) d( ) tr td(off) d( ff) Fall Time tf Source-Drain Reverse Recovery Time trr P-Ch 2.4 N-Ch 0.7 P-Ch 0.9 N-Ch 0.7 P-Ch 0.8 nC N-Ch 0.5 2.4 P-Ch 3 11 N-Ch 7 11 P-Ch 8 12 N-Channel VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W N-Ch 9 14 P-Ch 12 18 P-Channel P Channel VDD = - 15 1 V, V RL = 1 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W N-Ch 13 20 P-Ch 12 18 N-Ch 5 8 P-Ch 7 11 IF = 1.05 A, di/dt = 100 A/ms N-Ch 35 60 IF = - 1.05 A, di/dt = 100 A/ms P-Ch 30 60 W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 70971 S-31725—Rev. B, 18-Aug-03 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 NCHANNEL Transfer Characteristics 10 TC = - 55_C VGS = 10 thru 5 V 25_C 8 6 I D - Drain Current (A) I D - Drain Current (A) 8 4V 4 2 3V 2V 0 6 125_C 4 2 0 0 1 2 3 4 5 0 1 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 250 0.20 VGS = 4.5 V 0.15 VGS = 10 V 0.10 4 5 6 25 30 Capacitance 300 0.05 Ciss 200 150 100 Coss 50 0.00 Crss 0 0 1 2 3 4 5 6 7 0 5 Gate Charge 10 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) VDS = 15 V ID = 1.8 A 8 6 4 2 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 70971 S-31725—Rev. B, 18-Aug-03 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.25 2 4 1.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 1.2 1.0 0.8 0.6 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage NCHANNEL On-Resistance vs. Gate-to-Source Voltage 0.40 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) ID = 2 A TJ = 150_C 1 TJ = 25_C 0.32 ID = 2.5 A 0.24 0.16 0.08 0.00 0.1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power (Junction-to-Ambient) 0.4 8 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 6 - 0.0 - 0.2 4 - 0.4 2 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 150 0.1 0.01 10 1 TJ - Temperature (_C) 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70971 S-31725—Rev. B, 18-Aug-03 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance NCHANNEL Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 Transfer Characteristics 8 6V VGS = 10 thru 7 V TC = - 55_C 8 6 I D - Drain Current (A) I D - Drain Current (A) PCHANNEL 5V 6 4 4V 2 2V 25_C 125_C 4 2 3V 0 0 0 1 2 3 4 0 5 1 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 3 C - Capacitance (pF) 240 0.4 VGS = 4.5 V 0.3 VGS = 10 V 0.2 0.1 0.0 2 3 4 5 ID - Drain Current (A) Document Number: 70971 S-31725—Rev. B, 18-Aug-03 6 180 120 Coss Crss 0 1 5 Ciss 60 0 4 Capacitance 300 0.5 r DS(on)- On-Resistance ( W ) 2 VGS - Gate-to-Source Voltage (V) 6 7 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 5 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge VDS = 15 V ID = 1.8 A 8 VGS = 10 V ID = 1.8 A 1.6 6 4 2 0 0 On-Resistance vs. Junction Temperature 1.8 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 10 PCHANNEL 1 2 3 4 1.4 1.2 1.0 0.8 0.6 0.4 - 50 5 - 25 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 10 ID = 1.8 A r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.5 TJ = 150_C 1 TJ = 25_C ID = 1 A 0.4 0.3 0.2 0.1 0.0 0.1 0.00 0.3 0.6 0.9 1.2 0 1.5 2 VSD - Source-to-Drain Voltage (V) Single Pulse Power (Junction-to-Ambient) Power (W) V GS(th) Variance (V) ID = 250 mA 0.0 4 2 - 0.2 - 25 0 25 50 75 TJ - Temperature (_C) 6 10 6 0.2 www.vishay.com 8 8 0.4 - 0.4 - 50 6 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 4 100 125 150 0 0.01 0.1 1 10 30 Time (sec) Document Number: 70971 S-31725—Rev. B, 18-Aug-03 Si3552DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 70971 S-31725—Rev. B, 18-Aug-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1