RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS(ON) = 0.010Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve DRAIN (FLANGE) • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature JEDEC TO-262AA SOURCE DRAIN GATE Description A The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. DRAIN (FLANGE) JEDEC TO-263AB M A DRAIN (FLANGE) GATE SOURCE PACKAGE AVAILABILITY PART NUMBER PACKAGE BRAND RFP70N03 TO-220AB RFP70N03 RF1S70N03 TO-262AA F1S70N03 RF1S70N03SM TO-263AB F1S70N03 Symbol D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S70N03SM9A. G Formerly developmental type TA49025. Absolute Maximum Ratings A S TC = +25oC, Unless Otherwise Specified RFP70N03, RF1S70N03, RF1S70N03SM UNITS 30 V Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V 70 A 200 A Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Continuous Drain Current RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS (Refer to UIS Curve) Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = +25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1995 3-45 150 W 1.0 W/oC -55 to +175 oC File Number 3404.2 Specifications RFP70N03, RF1S70N03, RF1S70N03SM Electrical Specifications At Case Temperature (TC) = +25oC, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2 - 4 V Zero Gate Voltage Drain Current Gate-Source Leakage Current IDSS IGSS VDS=30V TC = 25oC - - 1 µA VGS = 0V TC = 150oC - - 50 µA VGS = ±20V - - 100 nA On Resistance rDS(ON) ID = 70A, VGS = 10V - - 0.010 Ω Turn-On Time tON VDD = 15V, ID = 70A - - 80 ns RL = 0.214Ω, VGS = +10V - 20 - ns RGS = 2.5Ω - 20 - ns tD(OFF) - 40 - ns tF - 25 - ns tOFF - - 125 ns - 215 260 nC - 120 145 nC Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge tD(ON) tR QG(TOT) VGS = 0 to 20V VDD = 24V, ID = 70A, RL = 0.343Ω Gate Charge at 10V QG(10) VGS = 0 to 10V Threshold Gate Charge QG(TH) VGS = 0 to 2V - 6.5 8.0 nC Input Capacitance CISS VDS = 25V, VGS = 0V - 3300 - pF Output Capacitance COSS f = 1MHz - 1750 - pF Reverse Transfer Capacitance CRSS - 750 - pF Thermal Resistance Junction to Case RθJC - - 1.0 oC/W Thermal Resistance Diode Junction to Ambient RθJA - - 80 oC/W MIN TYP MAX UNITS Source-Drain Diode Ratings and Specifications PARAMETERS SYMBOL TEST CONDITIONS Diode Forward Voltage VSD ISD = 70A - - 1.5 V Reverse Recovery Time tRR ISD = 70A, dISD/dt = 100A/µs - - 125 ns 3-46 RFP70N03, RF1S70N03, RF1S70N03SM Typical Performance Curves CASE TEMPERATURE (TC) = +25oC 100µs ID, DRAIN CURRENT (A) 100 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10 300 IAS, AVALANCHE CURRENT (A) 300 10ms 100ms DC VDSS MAX = 30V IDM 100 1 1 10 STARTING TJ = +25oC STARTING TJ = +150oC 10 50 If R = 0 tAV = (L) (IAS)/(1.3 x RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R) ln [(IAS x R)/(1.3 x RATED BVDSS - VDD) +1] 0.01 0.10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1. SAFE-OPERATING AREA CURVE 1.2 POWER DISSIPATION MULTIPLIER 70 ID, DRAIN CURRENT (A) 10.0 FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING 80 60 50 40 30 20 10 0 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 0 175 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE VGS = 7V 160 120 VGS = 6V 80 VGS = 5V 40 VGS = 4V 0 0.0 1.5 3.0 4.5 6.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 VDD = 15V VGS = 8V ID(ON), ON STATE DRAIN CURRENT (A) VGS = 10V 25 FIGURE 4. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE PULSE DURATION = 250µs, TC = +25oC 200 ID, DRAIN CURRENT (A) 1.0 tAV , TIME IN AVALANCHE (ms) 7.5 FIGURE 5. TYPICAL SATURATION CHARACTERISTICS 200 PULSE TEST PULSE DURATION = 250µs 160 DUTY CYCLE = 0.5% MAX -55oC +25oC 120 +175oC 80 40 0 0.0 2.0 4.0 6.0 8.0 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3-47 10.0 RFP70N03, RF1S70N03, RF1S70N03SM PULSE DURATION = 250µs, VGS = 10V, ID = 70A 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 1.2 0.8 0.4 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs TEMPERATURE ID = 250µA VGS = 0V, FREQUENCY (f) = 1MHz 7000 6000 1.6 C, CAPACITANCE (pF) BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 1.6 0.0 -80 200 FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE 2.0 VGS = VDS , ID = 250µA 2.0 VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE rDS(ON), NORMALIZED ON RESISTANCE Typical Performance Curves (Continued) 1.2 0.8 5000 4000 CISS 3000 COSS 2000 0.4 CRSS 1000 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0 0 200 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE vs TEMPERATURE FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE 101 10-1 0.5 0.2 PDM 0.1 t1 0.05 0.02 0.01 t2 NOTES: 1. DUTY FACTOR, D = t1/t2 2. PEAK TJ = PDM x (ZθJC) +TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 10-0 VDS, DRAIN SOURCE VOLTAGE (V) ZθJC, THERMAL RESPONSE 100 VDD = BVDSS 7.5 22.5 VDD = BVDSS 5.0 15.0 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS RL = 0.43Ω IG(REF) = 3.0mA VGS = 10V 7.5 0.0 ( REF ) 20 ---------------------I ( ACT ) G I 101 G 0.0 ( REF ) 80 ---------------------I ( ACT ) G I t, TIME (µs) 2.5 VGS, GATE SOURCE VOLTAGE (V) 10.0 30.0 G t, RECTANGULAR PULSE DURATION (s) FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO HARRIS APPLICATION NOTES AN7254 AND AN7260 3-48 RFP70N03, RF1S70N03, RF1S70N03SM Test Circuits and Waveforms BVDSS tP VDS VDS L IAS VDD VARY tP TO OBTAIN REQUIRED PEAK IAS RG + DUT - VGS tP 0V tAV IL 0.01Ω FIGURE 13. UNCLAMPED ENERGY WAVEFORMS tON tOFF tD(ON) VDD tD(OFF) tR VDS FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT tF 90% RL 90% VDS VGS 10% 10% DUT 0V 90% 50% VGS RGS 50% PULSE WIDTH 10% FIGURE 15. RESISTIVE SWITCHING WAVEFORMS FIGURE 16. RESISTIVE SWITCHING TEST CIRCUIT 3-49 VDD RFP70N03, RF1S70N03, RF1S70N03SM PSPICE Model for the RFP70N03, RF1S70N03, RF1S70N03SM rev 9/16/92 CA 12 8 6.09e-9 CB 15 14 6.05e-9 CIN 6 8 3.40e-9 DPLCAP - + 9 1 LGATE 20 RGATE 18 8 - VTO 16 6 11 MOS1 EBREAK S1A S2A 13 8 S1B 14 13 17 18 CIN 8 12 DBODY MOS2 21 RIN IT 8 17 1 LDRAIN 2 5 1e-9 LGATE 1 9 3.10e-9 LSOURCE 3 7 1.82e-9 - EVTO GATE RDRAIN DBREAK ESG 6 + 8 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 35.4 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 DRAIN 2 LDRAIN 5 10 + .SUBCKT RFP70N03 2 1 3 ; *NOM TEMP = 25oC RSOURCE 15 17 + 7 LSOURCE RBREAK S2B 3 SOURCE 18 RVTO 13 CA + EGS 6 - 8 MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 CB 14 + 5 EDS 8 - IT 19 - VBAT + RBREAK 17 18 RBKMOD 1 RDRAIN 5 16 RDSMOD 30.7e-6 RGATE 9 20 0.890 RIN 6 8 1e9 RSOURCE 8 7 RDSMOD 3.92e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.605 .MODEL DBDMOD D (IS=7.91e-12 RS=3.87e-3 TRS1=2.71e-3 TRS2=2.50e-7 CJO=4.84e-9 TT=4.51e-8) .MODEL DBKMOD D (RS=3.9e-2 TRS1=1.05e-4 TRS2=3.11e-5) .MODEL DPLCAPMOD D (CJO=4.8e-9 IS=1e-30 N=10) .MODEL MOSMOD NMOS (VTO=3.46 KP=47 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=8.46e-4 TC2=-8.48e-7) .MODEL RDSMOD RES (TC1=2.23e-3 TC2=6.56e-6) .MODEL RVTOMOD RES (TC1=-3.29e-3 TC2=3.49e-7) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8.35 VOFF=-6.35) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.35 VOFF=-8.35) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=3.0) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.0 VOFF=-2.0) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. 3-50