Transistors 2SD1423, 2SD1423A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SB1030 and 2SB1030A Unit: mm 4.0±0.2 ■ Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Symbol Rating Unit VCBO 30 V 2SD1423 2SD1423A 60 0.45+0.20 –0.10 0.45+0.20 –0.10 (2.5) (2.5) 25 V Collector-emitter voltage 2SD1423 (Base open) 2SD1423A VCEO Emitter-base voltage (Collector open) VEBO 7 Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation * PC 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.7±0.1 50 V 1 2 1: Emitter 2: Collector 3: Base NS-B1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) 2SD1423 Collector-emitter voltage (Base open) 2SD1423 Conditions IC = 10 µA, IE = 0 VCBO 2SD1423A Min 30 IC = 2 mA, IB = 0 VCEO Unit V 25 V 50 Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0 Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA Transition frequency Max 60 2SD1423A VCB = 10 V, IE = −50 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Typ VCB = 10 V, IE = 0, f = 1 MHz Cob 7 V 0.1 µA 1 µA 340 0.6 V 200 6 MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: April 2003 SJC00220BED 1 2SD1423, 2SD1423A IC VCE Ta = 25°C 1.0 300 200 0.8 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 0.6 0.4 3 mA 2 mA 0.2 1 mA 100 40 80 120 0 160 Ambient temperature Ta (°C) 0 2 4 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 10 25°C Ta = –25°C 75°C 0.1 0.01 0.01 0.1 1 10 Collector current IC (A) 250 200 150 −25°C 100 50 0 0.01 0.1 Collector output capacitance C (pF) (Common base, input open circuited) ob 1 Collector current IC (A) 6 4 2 10 Ta = 75°C 25°C 100 Collector-base voltage VCB (V) SJC00220BED −25°C 0.1 0.01 0.01 0.1 1 10 Collector current IC (A) fT I E 25°C IE = 0 f = 1 MHz Ta = 25°C 1 1 160 Ta = 75°C 8 0 12 VCE = 10 V Cob VCB 10 10 IC / IB = 10 10 hFE IC 300 IC / IB = 10 1 8 100 Collector-emitter voltage VCE (V) VBE(sat) IC 100 6 Transition frequency fT (MHz) 0 2 VCE(sat) IC 400 Collector current IC (A) Collector power dissipation PC (mW) 1.2 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 500 10 VCB = 10 V Ta = 25°C 120 80 40 0 − 0.1 −1 −10 Emitter current IE (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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