Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SB1377 Unit: mm 1.05 2.5±0.1 ±0.05 ● Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 2SB1377. Allowing supply with the radial taping. 0.65 max. 14.5±0.5 ● 0.8 0.2 ● (1.45) 1.0 1.0 ■ Features 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 +0.1 * 2.5±0.5 Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 1 A Collector current IC 500 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 Parameter 1 +0.1 (Ta=25˚C) 0.45–0.05 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 or more, and the board 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 20V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 10mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V 150mA*2 85 160 hFE2 VCE = 10V, IC = 500mA*2 40 90 Collector to emitter saturation voltage VCE(sat) IC = 300mA, IB = 30mA 0.35 0.6 V Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA 1.1 1.5 V Transition frequency fT VCB = 10V, IE = –50mA 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz hFE1 Forward current transfer ratio *1 VCE = 10V, IC = 340 MHz 6 15 *2 *1h FE pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SD2071 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C 700 IB=10mA 9mA 8mA 7mA 6mA 5mA 600 500 4mA 400 3mA 300 2mA 200 1mA 100 600 500 400 300 200 100 0 60 80 100 120 140 160 0 0 2 30 10 3 1 Ta=75˚C 0.3 –25˚C 0.1 0.03 0.3 1 3 30 10 3 25˚C Ta=75˚C 1 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 fT — IE 0.3 200 160 120 80 40 Collector output capacitance Cob (pF) VCB=10V Ta=25˚C 1 3 Emitter current IE (mA) –100 8 10 250 Ta=75˚C 200 25˚C –25˚C 150 100 50 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 8 6 4 2 0 –30 6 VCE=10V 10 IE=0 f=1MHz Ta=25˚C 10 4 300 Cob — VCB 12 –10 2 Base current IB (mA) Collector current IC (A) 240 –3 0 IC/IB=10 Collector current IC (A) 0 –1 10 hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 0.1 8 VBE(sat) — IC 100 0.01 0.01 0.03 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 25˚C 4 Forward current transfer ratio hFE 40 120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 700 0.2 0 Transition frequency fT (MHz) 800 Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — I B 800 Collector current IC (mA) Collector power dissipation PC (W) 1.2 IC=2mA Ta=25˚C 100 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) 2SD2071 Transistor ICEO — Ta 104 VCE=10V ICEO (Ta) ICEO (Ta=25˚C) 103 102 10 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 3