Ordering number:ENN5372A MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode FX856 DC/DC Converter Applications Package Dimensions unit:mm 2119 [FX856] 5.0 0.5 1.5 1.5 6 0.7 5 5.9 1.0 · The FX856 composite device consists of following two devices to facilitate high-density mounting. One is a P-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. · Each device incorporated in the FX856 is equivalent to the 2SJ416 and to the SB07-03P, respectively. 4.2 2.4 Features 0.4 4 3 0.8 2.4 1 2 0.8 2.4 1 : Gate 2 : Source 3 : No Contact 4 : Anode 5 : Cathode 6 : Drain (Bottom view) SANYO : XP6 0.4 1.8 6.2 1.2D 0.15max Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) –30 V ±20 V –2 A ID Drain Current (Pulse) IDP PW 10µs, duty cycle 1% –8 A Mounted on a ceramic board (750mm2×0.8mm) 1.5 W Allowable Power Dissipation PD 6 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C VRRM VRSM 30 V 35 V IO 700 mA Tc=25°C [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1cycle 5 A –55 to +125 ˚C –55 to +125 ˚C Marking : 863 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 92500TS (KOTO) TA-2770 No.5372–1/5 FX856 Electrical Characteristics at Ta = 25˚C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance ID=–1mA, VGS=0 –30 V VDS=–30V, VGS=0 IGSS VGS(off) VGS=±16V, VDS=0 | yfs | RDS(on)1 VDS=–10V, ID=–1A ID=–1A, VGS=–10V RDS(on)2 VDS=–10V, ID=–1mA –100 µA ±10 µA –2.5 V 310 440 mΩ 650 mΩ –1.0 1.2 2.0 S ID=–1A, VGS=–4V 480 Input Capacitance Ciss VDS=–10V, f=1MHz 170 pF Output Capacitance Coss VDS=–10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss 30 pF Turn-ON Delay Time td(on) VDS=–10V, f=1MHz See specified Test Circuit 10 ns tr See specified Test Circuit 20 ns td(off) See specified Test Circuit 110 ns tf See specified Test Circuit 75 Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VSD IS=–2A, VGS=0 ns –1.0 –1.2 V [SBD] Reverse Voltage VR VF IR=300µA IF=700mA VR=15V Interterminal Capacitance IR C Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit Forward Voltage Reverse Current Thermal Resistance Rthj-a 30 VR=10V, f=1MHz cycle V 0.55 V 80 µA 26 pF 10 Mounted on a ceramic board (750mm2×0.8mm) 100 ns ˚C/W Electrical Connection 6 1 5 2 3 1 : Gate 2 : Source 3 : No Contact 4 : Anode 5 : Cathode 6 : Drain 4 Switching Time Test Circuit Trr Test Circuit [MOSFET] [SBD] Duty≤10% VIN ID= --1A RL=15Ω 0V --10V 10mA 100mA VDD= --15V VOUT D 10µs 50Ω 100Ω PW=10µs D.C.≤1% 10Ω 100mA VR VIN G --5V P.G 50Ω trr FX856 S No.5372–2/5 FX856 ID -- VDS --4 --2.8V --2.6V --0.4 C 5°C --2 --1 --2.2V 25° C --2.4V VGS= --2.0V Ta= 7 --3.0V --0.8 --3 --25 ° --3.2V --1.2 0 [MOSFET] VDS= --10V Drain Current, ID – A Drain Current, ID – A --1.6 ID -- VGS [MOSFET] --3.4V --3.6 V --10V --4.0V --2.0 0 --2 0 --4 --6 --8 --10 Drain-to-Source Voltage, VDS – V RDS(on) -- VGS 1.4 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS – V IT01328 [MOSFET] RDS(on) -- ID 3 IT01329 [MOSFET] 2 Static Drain-to-Source On-State Resistance, RDS (on) – Ω Static Drain-to-Source On-State Resistance, RDS (on) – Ω ID= --1A 1.2 1.0 0.8 0.6 0.4 0.2 7 VGS= --4V 5 --10V 3 2 0.1 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 Gate-to-Source Voltage, VGS – V --20 --22 [MOSFET] =4V A, VGS --1 I D= 0.4 I D= =10V --1A, V GS 0.2 0 --60 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C IF -- VSD 3 3 140 5 7 --0.1 2 3 5 Drain Current, ID – A 7 --1.0 2 [MOSFET] VDS= --10V 5 3 2 = Ta 1.0 7 5°C --2 °C 25 °C 75 5 3 2 0.1 7 5 7 --0.01 160 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID – A IT01332 1000 3 5 IT01333 Ciss, Coss, Crss -- VDS [MOSFET] 2 3 IT01331 | yfs | - ID 7 Forward Transfer Admittance, | yfs | – S 0.8 0.6 2 7 --0.01 IT01330 RDS(on) -- Ta 1.0 Static Drain-to-Source On-State Resistance, RDS (on) – Ω 1.0 [MOSFET] f=1MHz 7 5 Ciss, Coss, Crss – pF 7 5 °C 25°C 2 --0.1 7 --25°C 3 Ta=7 5 Forward Current, IF – A --1.0 5 3 2 Ciss Coss 100 7 5 Crss 3 3 2 2 --0.01 10 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD – V --1.2 IT01334 0 --2 --4 --6 --8 --10 --12 Drain-to-Source Voltage, VDS – V --14 --16 IT01335 No.5372–3/5 FX856 SW Time -- ID 3 [MOSFET] [MOSFET] 100µs IDP=8A 1m 10 s m s 3 td(off) 2 Drain Current, ID – A Switching Time, SW Time – ns 2 ASO --10 7 5 VDD= --15V VGS= --10V 100 tf 7 5 3 tr 2 td(on) 10 er --0.1 7 5 2 3 5 7 2 --1.0 3 Drain Current, ID – A --0.01 Mounted on a ceramic 2 3 5 7 --1.0 --0.1 board (750mm2×0.8mm) 2 3 5 7 --10 2 3 5 7 --100 IT01336 Drain-to-Source Voltage, VDS – V IT01344 PD -- Ta 1.6 5 on Ta=25°C Single pulse 2 --0.1 ati Operation in this area is limited by RDS(on). 2 3 7 op 3 7 5 DC ID=2A --1.0 7 5 PD -- Tc [MOSFET] 7 [MOSFET] nt ou M 1.4 Allowable Power Dissipation, PD – W Allowable Power Dissipation, PD – W 1.5 ed 1.2 on ac am er 1.0 ic d ar bo 0.8 (7 2 m m 50 0.6 ×0 ) m m .8 0.4 0.2 0 20 40 60 80 100 140 120 4 3 2 1 160 Ambient Temperature, Ta – ˚C IT01337 IF -- VF [SBD] 5 3 1.0 7 5 3 5°C 2 7 5 25°C Ta= 12 0.1 3 0 2 0.01 0 0.2 0.4 0.6 0.8 IT01339 PF(AV) -- IO [SBD] 1.0 40 60 80 100 120 IR -- VR [SBD] °C Ta=125 100°C 75°C 50°C 25°C 0 5 10 15 20 25 ›Sine wave θ=180° › 0.6 ‹ ¤ ⁄ Rectangular wave θ 360° Sine wave 0 0.2 0.4 35 IT01340 C -- VR 2 Interterminal Capacitance, C – pF ¤Rectangular wave θ=120° 0 30 Reverse Voltage, VR – V [SBD] f=1MHz 0.8 ‹Rectangular wave θ=180° 0.2 160 IT01338 ⁄Rectangular wave θ=60° 0.4 140 Case Temperature, Tc – ˚C 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 1.2 1.0 Diode Forward Voltage, VF – V 20 5 3 2 1000 7 5 3 2 Reverse Current, IR – µA 2 Forward Current, IF – A 5 0 0 Average Forward Power Dissipation, PF(AV) -- W 6 0.6 180° 360° 0.8 Average Forward Current, IO -- A 1.0 1.2 IT01341 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3 Reverse Voltage, VR – V 5 7 100 IT01342 No.5372–4/5 FX856 IS -- t Surge Forward Current, IS (Peak) – A 6 [SBD] Current waveform 50Hz sine wave Is 5 20ms t 4 3 2 1 0 7 0.01 2 3 5 7 0.1 2 3 5 Time, t – s 7 1.0 2 3 IT01343 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice. PS No.5372–5/5