GFP50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 13mΩ ID 50A H C N ct E ET u R d T NF w Pro Ne GE TM TO-220AB 0.185 (4.70) 0.170 (4.31) 0.154 (3.91) Dia. 0.142 (3.60) 0.415 (10.54) Max. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.102 (2.56) * 0.603 (15.32) 0.573 (14.55) 0.410 (10.41) 0.350 (8.89) PIN D G 0.155 (3.93) 0.134 (3.40) D G D 0.360 (9.14) 0.330 (8.38) 0.635 (16.13) 0.580 (14.73) Features 1.148 (29.16) 1.118 (28.40) S 0.104 (2.64) 0.094 (2.39) 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) S • Dynamic dv/dt Rating • Repetitive Avalanche Rated • 175°C Operating Temperature • Ease of Paralleling • Fast Switching for High Efficiency • Simple Drive Requirements Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.190 (4.83) * May be notched or flat Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 Mounting Torque: 10 in-lbs maximum Weight: 2.0g Dimensions in inches and (millimeters) Maximum Ratings and Thermal Characteristics (T Parameter A = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 50 IDM 100 PD 62.5 25 W TJ, Tstg –55 to 150 °C TL 275 °C Junction-to-Case RθJC 2.0 °C/W Junction-to-Ambient (PCB Mounted) RθJA 40 °C/W Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 100°C Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Unit V A Note: (1) Surface Mounted on FR4 Board, t ≤ 10 sec. 6/20/00 GFP50N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 IGSS VDS = 0V, VGS = ±20V ±100 nA IDSS VDS = 30V, VGS = 0V 1 µA ID(on) VDS ≥ 5V, VGS = 10V Static Gate-Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(1) RDS(on) V 3.0 60 A VGS = 10V, ID = 25A 11 13 VGS = 4.5V, ID = 20A 15 20 Forward Transconductance(1) gfs VDS = 10V, ID = 25A 40 Diode Forward Voltage VSD IS = 25A, VGS = 0V 0.9 1.3 35 60 mΩ S V (1) Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDS = 15V, VGS = 10V 8 ID = 50A nC 6 VDD = 15V, RL = 15Ω ID ≈ 1A, VGEN = 10V RG = 6Ω IF = 25A, di/dt = 100A/µs 11 20 11 20 48 80 15 30 ns 160 Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton RL VIN td(on) tr VOUT D VGS td(off) tf 90 % 90% Output, VOUT RGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH Switching Test Circuit Switching Waveforms GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 80 60 5.0V VGS=10V VDS = 10V 50 60 ID -- Drain Current (A) ID -- Drain Source Current (A) 4.5V 6.0V 4.0V 40 3.5V 20 3.0V 40 30 TJ = 125°C 20 --55°C 25°C 10 2.5V 0 0 0 1 2 3 4 5 1 2 3 4 5 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.8 0.03 1.6 RDS(ON) -- On-Resistance (Ω) VGS(th) -- Threshold Voltage (V) ID = 250µA 1.4 1.2 1 0.8 0.6 --50 0.02 VGS = 4.5V 5V 0.015 10V 0.01 0.005 0 --25 0 25 50 75 100 125 0 150 20 40 60 80 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 100 0.04 VGS = 10V ID = 25A ID = 25A 0.035 RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) 0.025 1.4 1.2 1 0.8 0.03 0.025 0.02 TJ = 125°C 0.015 0.01 25°C 0.005 0.6 --50 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 2 4 6 8 VGS -- Gate-to-Source Voltage (V) 10 GFP50N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 8 – Capacitance Fig. 7 – Gate Charge 2500 VDS = 15V ID = 25A f = 1MHz VGS = 0V 8 2000 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 6 4 2 Ciss 1500 1000 500 Coss Crss 0 0 0 10 20 30 0 35 5 Qg -- Total Gate Charge (nC) 100 20 25 30 44 ID = 250µA BVDSS -- Breakdown Voltafge (V) VGS = 0V IS -- Source Current (A) 15 Fig. 10 – Breakdown Voltage vs. Temperature Fig. 9 – Source-Drain Diode Forward Voltage 10 TJ = 125°C 1 25°C --55°C 0.1 0.01 10 VDS -- Drain-to-Source Voltage (V) 0 0.2 0.4 0.6 0.8 VSD -- Source-to-Drain Voltage (V) 1 1.2 43 42 41 40 39 38 37 36 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 120 150