H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1549 (Z) Rev.0 Aug.2002 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge • Avalanche ratings Outline LDPAK D 4 G 1 1 S 2 4 4 2 3 H5N5006LS 3 H5N5006LD 1 2 3 H5N5006LM 1. Gate 2. Drain 3. Source 4. Drain H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS ±30 V Drain current ID 3.5 A 14 A Drain peak current ID (pulse) Body-drain diode reverse drain current IDR Avalanche current IAP Note Note 1 3.5 A 3 3.5 A Note 2 50 W Channel dissipation Pch Channel to case thermal impedance θch-c 2.5 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.0, Aug. 2002, page 2 of 12 H5N5006LD, H5N5006LS, H5N5006LM Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 500 — — V ID = 10 mA, VGS = 0 Gate to source leak current IDSS — — 1 µA VDS = 500 V, VGS = 0 Zero gate voltage drain current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.0 — 4.5 V VDS = 10 V, ID = 1 mA Forward transfer admittance |yfs| 1.8 3.0 — S ID = 1.75 A, VDS = 10 V Note Static drain to source on state resistance RDS(on) — 2.5 3.0 Ω ID = 1.75 A, VGS = 10 V Note Input capacitance Ciss — 365 — pF VDS = 25 V Output capacitance Coss — 35 — pF VGS = 0 Reverse transfer capacitance Crss — 8 — pF f = 1 MHz Turn-on delay time td(on) — 20 — ns VDD ≅ 250 V, ID = 1.75 A Rise time tr — 13 — ns VGS = 10 V Turn-off delay time td(off) — 48 — ns RL = 143 Ω Fall time tf — 14 — ns Rg = 10 Ω Total gate charge Qg — 14 — nC VDD = 400 V Gate to source charge Qgs — 2 — nC VGS = 10 V Gate to drain charge Qgd — 8 — nC ID = 3.5 A Body-drain diode forward voltage VDF — 0.85 1.3 V IF = 3.5 A, VGS = 0 Body-drain diode reverse recovery time trr — 280 — ns IF = 3.5 A, VGS = 0 diF/dt = 100 A/µs Body-drain diode reverse recovery charge Qrr — 0.8 — µC 4 4 Notes: 4. Pulse test Rev.0, Aug. 2002, page 3 of 12 H5N5006LD, H5N5006LS, H5N5006LM Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 0 ID (A) Drain Current 50 100 150 Case Temperature 200 0.5 30 100 300 1000 VDS (V) Typical Transfer Characteristics 4 6V V DS = 10 V Pulse Test 4 ID (A) 10 V 8V 3 3 5.5 V 2 1 5V Drain Current Drain Current 10 5 ID (A) Pulse Test 3 Drain to Source Voltage Typical Output Characteristics 5 Operation in this area is limited by RDS(on) 0.02 0.01 Ta = 25°C 0.005 0.1 0.3 1 Tc (°C) µs D (T C O c = per 25 at °C ion ) 2 1 0.2 0.1 0.05 20 10 PW = 10 ms(1shot) µs 40 5 0 10 60 s m Channel Dissipation 20 10 1 Pch (W) 80 2 1 Tc = 75°C 25°C −25°C V GS = 4.5 V 0 4 8 12 Drain to Source Voltage Rev.0, Aug. 2002, page 4 of 12 16 20 VDS (V) 0 2 4 6 Gate to Source Voltage 8 10 VGS (V) 20 16 12 ID=3A 8 2A 4 0 Static Drain to Source on State Resistance RDS(on) (Ω) Pulse Test 1A 16 5 VGS = 10 V, 15 V 2 1 0.5 0.2 VGS (V) ID=3A 4 2A 1A 2 0 −40 0 40 80 Cace Temperature 120 Tc (°C) 1 0.5 Drain Current V GS = 10 V 6 0.1 0.2 20 Static Drain to Source on State Resistance VS. Temperature 10 Pulse Test 8 Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 0.1 12 4 8 Gate to Source Voltage 160 Forward Transfer Admittance |yfs| (S) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source on State Resistance RDS(on) (Ω) H5N5006LD, H5N5006LS, H5N5006LM 10 5 2 10 ID (A) Forward Transfer Admittance vs. Drain Current 5 Tc = −25°C 2 25°C 1 75°C 0.5 0.2 0.1 0.1 0.2 V DS = 10 V Pulse Test 0.5 1 Drain Current 2 5 10 ID (A) Rev.0, Aug. 2002, page 5 of 12 H5N5006LD, H5N5006LS, H5N5006LM Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 1000 500 Capacitance C (pF) 500 200 100 50 di / dt = 100 A / µs V GS = 0, Ta = 25°C 20 10 0.1 VDD = 100 V 250 V 400 V 600 0 VDS 12 8 VDD = 400 V 250 V 100 V 8 16 24 32 Gate Charge Qg (nC) Rev.0, Aug. 2002, page 6 of 12 Coss 20 10 Crss 5 0 100 250 50 150 200 Drain to Source Voltage VDS (V) Switching Characteristics (V) 16 4 0 40 VGS 800 200 50 1000 Gate to Source Voltage (V) VDS Drain to Source Voltage VGS 400 100 1 20 I D = 3.5 A VGS = 0 f = 1 MHz 200 2 0.2 1 5 0.5 10 Reverse Drain Current IDR (A) Dynamic Input Characteristics 1000 Ciss 2 Switching Time t (ns) Reverse Recovery Time trr (ns) 1000 300 tf V GS = 10 V, V DD = 250 V PW = 5 µs, duty < 1 % R G =10 Ω 100 30 t d(off) t d(on) 10 tr 3 1 0.1 0.2 0.5 1 2 Drain Current 5 ID (A) 10 20 H5N5006LD, H5N5006LS, H5N5006LM Reverse Drain Current IDR (A) 5 4 3 2 5, 10 V V GS = 0 V 1 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 VSD 2.0 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature 5 V DS = 10 V I D = 10 mA 4 1 mA 3 0.1 mA 2 1 0 -50 (V) 0 50 100 Case Temperature Switching Time Test Circuit 150 Waveform Vout Monitor Vin Monitor 200 Tc (°C) 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 250 V Vout 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.0, Aug. 2002, page 7 of 12 H5N5006LD, H5N5006LS, H5N5006LM Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θ ch − c(t) = γ s (t) • θ ch − c θ ch − c = 2.5°C/W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 lse 0.0 pu t ho 1s 0.01 10 µ 100 µ PW T PW T 1m 10 m Pulse Width Rev.0, Aug. 2002, page 8 of 12 D= 100 m PW (s) 1 10 H5N5006LD, H5N5006LS, H5N5006LM Package Dimensions • H5N5006LD Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.0 ± 0.5 10.0 0.2 0.86 +– 0.1 11.3 ± 0.5 1.37 ± 0.2 1.3 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 2.49 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (L) — — 1.4 g Rev.0, Aug. 2002, page 9 of 12 H5N5006LD, H5N5006LS, H5N5006LM • H5N5006LS Unit: mm 7.8 7.0 (1.5) 0.3 10.0 +– 0.5 0.2 0.1 +– 0.1 2.2 2.49 ± 0.2 0.2 0.86 +– 0.1 2.54 ± 0.5 0.3 3.0 +– 0.5 1.3 ± 0.2 2.54 ± 0.5 8.6 ± 0.3 (1.5) 1.37 ± 0.2 7.8 6.6 1.3 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) Rev.0, Aug. 2002, page 10 of 12 1.7 (1.4) 4.44 ± 0.2 10.2 ± 0.3 LDPAK (S)-(1) — — 1.3 g H5N5006LD, H5N5006LS, H5N5006LM • H5N5006LM Unit: mm 2.54 ± 0.5 7.8 7.0 (2.3) 0.3 10.0 +– 0.5 0.2 0.1 +– 0.1 2.2 2.49 ± 0.2 0.2 0.86 +– 0.1 2.54 ± 0.5 1.7 7.8 6.6 1.3 ± 0.2 0.3 5.0 +– 0.5 1.3 ± 0.2 8.6 ± 0.3 (1.5) 1.37 ± 0.2 (1.4) 4.44 ± 0.2 10.2 ± 0.3 0.4 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) LDPAK (S)-(2) — — 1.35 g Rev.0, Aug. 2002, page 11 of 12 H5N5006LD, H5N5006LS, H5N5006LM Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.0, Aug. 2002, page 12 of 12