ETC H7N0401LD|H7N0401LS|H7N0401LM

H7N0401LD, H7N0401LS, H7N0401LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1527C (Z)
4th. Edition
May 2002
Features
• Low on-resistance
RDS(on) = 3.1 mΩ typ.
• 4.5 V gate drive devices
• High Speed Switching
Outline
LDPAK
4
4
4
D
1
G
1
S
2
2
1
3
2
3
H7N0401LS H7N0401LM
3
H7N0401LD
1. Gate
2. Drain
3. Source
4. Drain
H7N0401LD, H7N0401LS, H7N0401LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
40
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
95
A
380
A
95
A
70
A
650
mJ
100
W
Drain peak current
ID (pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAPNote
Avalanche energy
3
Note3
EAR
Note2
Note1
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.3, May 2002, page 2 of 11
H7N0401LD, H7N0401LS, H7N0401LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
40
—
—
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 40 V, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS = ±20 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
VDS = 10 V, ID = 1 mANote
Forward transfer admittance
|yfs|
60
100
—
S
ID = 47.5 A, VDS = 10 VNote
Static drain to source on state
resistance
RDS(on)
—
3.1
4.2
mΩ
ID = 47.5 A, VGS= 10 VNote
Static drain to source on state
resistance
RDS(on)
—
4.8
7.0
mΩ
ID = 47.5 A, VGS=4.5 VNote
Input capacitance
Ciss
—
9300
—
pF
VDS = 10 V
Output capacitance
Coss
—
1300
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
670
—
pF
f = 1 MHz
1
1
1
1
Total gate charge
Qg
—
160
—
nc
VDD = 25 V
Gate to source charge
Qgs
—
36
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
40
—
nc
ID = 95 A
Turn-on delay time
td(on)
—
45
—
ns
VGS = 10V
Rise time
tr
—
270
—
ns
ID= 47.5 A
Turn-off delay time
td(off)
—
130
—
ns
RL = 0.63 Ω
Fall time
tf
—
85
—
ns
RG = 4.7 Ω
Body–drain diode forward voltage VDF
—
0.95
—
V
IF = 95 A, VGS = 0
Body–drain diode reverse
recovery time
—
50
—
ns
IF = 95 A, VGS = 0
diF/dt = 100A/µs
trr
Notes: 1. Pulse test
Rev.3, May 2002, page 3 of 11
H7N0401LD, H7N0401LS, H7N0401LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
(A)
ID
Drain Current
50
100
Case Temperature
150
3
Operation in
1 this area is
Tc (°C)
Typical Output Characteristics
3
10
30
Drain to Source Voltage
VDS
100
(V)
Typical Transfer Characteristics
200
200
VGS = 10 V
V DS = 10 V
Pulse Test
Pulse Test
6.0 V
(A)
160
limited by RDS(on)
Ta = 25°C
0.1
0.1 0.3
1
200
µs
t)
ho
1s
s(
)
n
0m
tio 5°C
era 2
Op (Tc =
10
0.3
0
(A)
s
100
µs
=1
40
0
1m
30
80
10
DC
Channel Dissipation
120
10
300
PW
Pch (W)
160
4.5 V
160
ID
120
80
3.5 V
40
Drain Current
Drain Current
ID
4.0 V
120
80
40
75°C
25°C
Tc = –25°C
3V
0
2
4
6
Drain to Source Voltage
Rev.3, May 2002, page 4 of 11
8
VDS
10
(V)
0
1
2
3
Gate to Source Voltage
4
VGS
5
(V)
H7N0401LD, H7N0401LS, H7N0401LM
0.2
(mΩ)
Drain to Source on State Resistance
RDS(on)
I D = 50 A
0.1
20 A
12
4
8
Gate to Source Voltage
10 A
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
10, 20, 50 A
8
6
4.5 V
4
10, 20, 50 A
VGS = 10 V
2
0
–50
0
50
100
Case Temperature
150
Tc
(°C)
200
Drain to Source on State Resistance
RDS(on)
0.3
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
0.4
0
(mΩ)
0.5
Pulse Test
30
10
VGS = 4.5 V
3
10 V
1
0.3
0.1
1
3
30
100 300 1000
10
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1000
300
Tc = –25°C
100
25°C
30
75°C
10
3
1
V DS = 10 V
Pulse Test
1
3
10
30
100
Drain Current ID
300 1000
(A)
Rev.3, May 2002, page 5 of 11
H7N0401LD, H7N0401LS, H7N0401LM
Body-Drain Diode Reverse
Recovery Time
30000
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
10000
10
3
10
30
Reverse Drain Current
Ciss
3000
Coss
1000
Crss
300
20
1
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
100
0
100
IDR (A)
V DS
12
40
8
20
0
VDS = 40 V
25 V
10 V
40
80
Gate Charge
Rev.3, May 2002, page 6 of 11
120
160
Qg (nc)
4
0
200
(V)
1000
40
50
(V)
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
Rg = 4.7 Ω
500
Switching Time t (ns)
V DS = 10 V
25 V
40 V
60
16
VGS
V GS
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
80
30
Switching Characteristics
20
I D = 95 A
20
Drain to Source Voltage VDS
Dynamic Input Characteristics
100
10
200
t d(off)
100
tf
50
t d(on)
tr
20
10
0.1
0.3
1
3
Drain Current
10
30
ID
(A)
100
H7N0401LD, H7N0401LS, H7N0401LM
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current
IDR
(A)
200
160
10 V
120
80
5V
V GS = 0, –5 V
40
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
800
I AP = 65 A
V DD = 25 V
duty < 0.1 %
Rg > 50 W
640
480
320
160
0
25
(V)
50
Avalanche Test Circuit
V DS
Monitor
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50 W
0
VDD
Rev.3, May 2002, page 7 of 11
H7N0401LD, H7N0401LS, H7N0401LM
Normalized Transient Thermal Impedance gs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
q ch
0.1
q ch
- c(t) = gs (t) • q ch - c
- c = 1.25°C/ W, Tc = 25°C
0.05
0.03
PDM
D=
1
0.0
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Waveform
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
V DS
= 30 V
10%
90%
td(on)
Rev.3, May 2002, page 8 of 11
10%
tr
10%
90%
td(off)
tf
H7N0401LD, H7N0401LS, H7N0401LM
Package Dimensions
As of January, 2002
Unit: mm
(1.4)
4.44 ± 0.2
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
11.0 ± 0.5
10.0
1.2 ± 0.2
11.3 ± 0.5
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.4 g
Rev.3, May 2002, page 9 of 11
H7N0401LD, H7N0401LS, H7N0401LM
As of January, 2002
Unit: mm
7.8
7.0
(1.5)
10.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.15
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.27 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.2 ± 0.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(1)
—
—
1.3 g
As of January, 2002
Unit: mm
7.8
7.0
(2.3)
10.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.2
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.27 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.2 ± 0.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.3, May 2002, page 10 of 11
LDPAK (S)-(2)
—
—
1.35 g
H7N0401LD, H7N0401LS, H7N0401LM
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.3, May 2002, page 11 of 11