ETC H7N0602LD|H7N0602LS|H7N0602LM

H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1526C (Z)
4th. Edition
May 2002
Features
• Low on-resistance
RDS(on) = 4.1 mΩ typ.
• 4.5 V gate drive devices
• High Speed Switching
Outline
LDPAK
4
4
4
D
1
G
1
S
2
2
1
3
2
3
H7N0602LS H7N0602LM
3
H7N0602LD
1. Gate
2. Drain
3. Source
4. Drain
H7N0602LD, H7N0602LS, H7N0602LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
85
A
340
A
85
A
65
A
362
mJ
100
W
Drain peak current
ID (pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAPNote
Avalanche energy
3
Note3
EAR
Note2
Note1
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.3, May 2002, page 2 of 11
H7N0602LD, H7N0602LS, H7N0602LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 60 V, VGS = 0
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.5
—
2.5
V
VDS = 10 V, ID = 1 mANote
Forward transfer admittance
|yfs|
70
120
—
S
ID = 45 A, VDS = 10 VNote
1
1
note1
Static drain to source on state
resistance
RDS(on)
—
4.1
5.2
mΩ
ID = 45 A, VGS= 10 V
Static drain to source on state
resistance
RDS(on)
—
6.2
9.0
mΩ
ID = 45 A, VGS=4.5 VNote
Input capacitance
Ciss
—
9000
—
pF
VDS = 10 V
Output capacitance
Coss
—
1000
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
470
—
pF
f = 1 MHz
Total gate charge
Qg
—
140
—
nc
VDD = 25 V
Gate to source charge
Qgs
—
30
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
30
—
nc
ID = 85 A
Turn-on delay time
td(on)
—
55
—
ns
VGS = 10 V
Rise time
tr
—
290
—
ns
ID= 45 A
Turn-off delay time
td(off)
—
140
—
ns
RL = 0.67 Ω
Fall time
tf
—
50
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage VDF
—
0.95
—
V
IF = 85 A, VGS = 0
Body–drain diode reverse
recovery time
—
45
—
ns
IF = 85 A, VGS = 0
diF/dt = 100 A/µs
trr
1
Notes: 1. Pulse test
Rev.3, May 2002, page 3 of 11
H7N0602LD, H7N0602LS, H7N0602LM
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
(A)
1000
120
300
ID
Drain Current
10
100
150
Case Temperature
1 Operation in
Tc (°C)
(A)
ID
4.5 V
120
10
30
Drain to Source Voltage
VDS
4.0 V
80
3.5 V
40
2
4
6
Drain to Source Voltage
Rev.3, May 2002, page 4 of 11
8
VDS
(V)
160
V DS = 10 V
Pulse Test
120
80
40
Tc=75°C
25°C
–25°C
3V
0
100
Typical Transfer Characteristics
Drain Current
(A)
ID
160
6.0 V
3
200
Pulse Test
VGS = 10 V
this area is
limited by RDS(on)
0.1 Ta = 25°C
0.1 0.3
1
200
Typical Output Characteristics
200
PW = 10 ms
(1 shot)
3
0.3
50
DC Operation
(Tc = 25°C)
s
40
µs
µs
m
80
0
Drain Current
0
100
30
10
10
1
Channel Dissipation
Pch (W)
160
10
(V)
0
1
2
3
Gate to Source Voltage
4
VGS
5
(V)
H7N0602LD, H7N0602LS, H7N0602LM
100
Pulse Test
400
300
I D = 50 A
200
100
20 A
12
4
8
Gate to Source Voltage
Drain to Source on State Resistance
RDS(on) (mΩ)
0
10 A
20
VGS (V)
16
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
50 A
10, 20 A
8
4.5 V
4
0
–50
VGS = 10 V
0
50
10, 20, 50 A
100
Case Temperature
150
Tc
Drain to Source on State Resistance
RDS(on) (mΩ)
500
Static Drain to Source on State Resistance
vs. Drain Current
(°C)
200
Pulse Test
30
10
VGS = 4.5 V
10 V
3
1
1
3
30
100 300 1000
10
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1000
Tc = –25°C
300
100
25°C
30
75°C
10
3
1
V DS = 10 V
Pulse Test
1
3
10
30
100
Drain Current ID
300 1000
(A)
Rev.3, May 2002, page 5 of 11
H7N0602LD, H7N0602LS, H7N0602LM
Body-Drain Diode Reverse
Recovery Time
100000
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
300
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
Typical Capacitance vs.
Drain to Source Voltage
100
30
10
30000
3000
1000
Coss
300
3
1
0.1
0.3
1
3
10
Reverse Drain Current
30
Ciss
10000
VGS = 0
f = 1 MHz
100
0
100
10
IDR (A)
12
40
8
20
0
VDD = 50 V
25 V
10 V
40
80
Gate Charge
Rev.3, May 2002, page 6 of 11
120
160
Qg (nc)
40
50
(V)
4
0
200
(V)
1000
tf
300
Switching Time t (ns)
V DD = 50 V
25 V
10 V
VGS
V GS
16
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
I D = 85 A
60 V
DS
30
Switching Characteristics
20
80
20
Drain to Source Voltage VDS
Dynamic Input Characteristics
100
Crss
100
tr
t d(off)
t d(on)
30 t r
tf
10
V GS = 10 V, V DD = 30 V
3 PW = 5 µs, duty < 1 %
Rg=4.7Ω
1
0.1
0.3
1
3
10
Drain Current
ID
30
(A)
100
H7N0602LD, H7N0602LS, H7N0602LM
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current
IDR
(A)
Repetitive Avalanche Energy EAR (mJ)
200
10 V
160
120
80
5V
V GS = 0, –5 V
40
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD
500
I AP = 65 A
V DD = 25V
duty < 0.1 %
Rg > 50 W
400
300
200
100
0
25
(V)
50
Avalanche Test Circuit
V DS
Monitor
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50 W
0
VDD
Rev.3, May 2002, page 7 of 11
H7N0602LD, H7N0602LS, H7N0602LM
Normalized Transient Thermal Impedance gs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
q ch
0.1
q ch
- c(t) = gs (t) • q ch - c
- c = 1.25°C/ W, Tc = 25°C
0.05
0.03
PDM
D=
1
0.0
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Rg
Waveform
90%
D.U.T.
RL
Vin
Vout
Vin
10 V
V DS
= 30V
10%
90%
td(on)
Rev.3, May 2002, page 8 of 11
10%
tr
10%
90%
td(off)
tf
H7N0602LD, H7N0602LS, H7N0602LM
Package Dimensions
As of January, 2002
Unit: mm
(1.4)
4.44 ± 0.2
1.27 ± 0.2
0.2
0.86 +– 0.1
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
11.0 ± 0.5
10.0
1.2 ± 0.2
11.3 ± 0.5
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
10.2 ± 0.3
2.59 ± 0.2
0.4 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.4 g
Rev.3, May 2002, page 9 of 11
H7N0602LD, H7N0602LS, H7N0602LM
As of January, 2002
Unit: mm
7.8
7.0
(1.5)
10.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.15
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.27 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.2 ± 0.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(1)
—
—
1.3 g
As of January, 2002
Unit: mm
7.8
7.0
(2.3)
10.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.2
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.1 +– 0.1
2.2
1.27 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.2 ± 0.2
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.3, May 2002, page 10 of 11
LDPAK (S)-(2)
—
—
1.35 g
H7N0602LD, H7N0602LS, H7N0602LM
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.3, May 2002, page 11 of 11