ETC 2SK3235

2SK3235
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1371 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
•
Low on-resistance: R DS(on) = 0.3 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A)
Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A)
Avalanche ratings
Outline
TO-3P
D
G
1
S
2
3
1. Gate
2. Drain (Flange)
3. Source
2SK3235
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
15
A
60
A
15
A
60
A
15
A
150
W
Note1
Drain peak current
ID
Body-drain diode reverse drain
current
I DR
Body-drain diode reverse drain peak
current
I DR
Avalanche current
I AP
(pulse)
Note1
(pulse)
Note3
Note2
Channel dissipation
Pch
Channel to case Thermal Impedance
θ ch-c
0.833
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
2
2SK3235
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±30 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
1
µA
VDS = 500 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.0
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
—
0.3
0.4
Ω
I D = 7.5 A, VGS = 10 V Note4
Forward transfer admittance
|yfs|
8.5
14
—
S
I D = 7.5 A, VDS = 10 V Note4
Input capacitance
Ciss
—
1920
—
pF
VDS = 25 V
Output capacitance
Coss
—
220
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
30
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
35
—
ns
I D = 7.5 A
Rise time
tr
—
30
—
ns
VGS = 10 V
Turn-off delay time
td(off)
—
120
—
ns
RL = 33.3 Ω
Fall time
tf
—
50
—
ns
Rg = 10 Ω
Total gate charge
Qg
—
48
—
nC
VDD = 400 V
Gate to source charge
Qgs
—
10
—
nC
VGS = 10 V
Gate to drain charge
Qgd
—
24
—
nC
I D = 15 A
Body-drain diode forward
voltage
VDF
—
0.85
1.3
V
I F = 15 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
500
—
ns
I F = 15 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
—
20
—
µC
diF/dt = 100 A/µs
Note:
4. Pulse test
3
2SK3235
Main Characteristics
Power vs. Temperature Derating
ID (A)
150
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
10
µs
10
30
0µ
PW
s
1m
10
DC
=
s
1
0
Op
m
er
s(
at
3
1s
ion
ho
(T
t)
c
Operation
in
1
=
100
200
100
50
this area is
limited by RDS(on)
0.3
50
100
Case Temperature
Ta = 25°C
150
200
1
Tc (°C)
Typical Output Characteristics
20
Pulse Test
V DS = 10 V
8,10 V
5.5 V
12
8
5V
4
16
10
20
30
40
50
Drain to Source Voltage VDS (V)
Pulse Test
12
8
25°C
4
Tc = 75°C
–25°C
VGS = 4.5 V
0
300 1000
VDS (V)
Typical Transfer Characteristics
ID (A)
16
30
3
10
100
Drain to Source Voltage
20
Drain Current
ID (A)
)
0.03
0
Drain Current
°C
0.1
0.01
4
25
0
2
4
6
Gate to Source Voltage
8
10
VGS (V)
2SK3235
Pulse Test
16
12
Static Drain to Source on State Resistance
vs. Drain Current
2
1
VGS = 10 V, 15 V
0.5
8
I D = 15 A
4
0.2
10 A
5A
0
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source on State Resistance
RDS(on) (Ω)
20
12
4
8
Gate to Source Voltage
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6 V GS = 10 V
1.2
I D = 15 A
0.8
8A
0.4
0
–40
Pulse Test
0.1
5A
0
40
80
120
Case Temperature Tc (°C)
160
1
2
5
10
Drain Current
20
50
ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
VDS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
50
20
10
Tc = –25°C
5
25°C
2
1
75°C
0.5
V DS = 10 V
Pulse Test
0.2
0.1
0.1 0.2
0.5 1
2
Drain Current
5
10 20
50
ID (A)
5
2SK3235
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
500
2000
Capacitance C (pF)
5000
Reverse Recovery Time trr (ns)
1000
200
100
50
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
20
10
0.1
Ciss
1000
500
200
Coss
100
50
Crss
20
VGS = 0
f = 1 MHz
10
5
0
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
400
200
8
V DD = 400 V
250 V
100 V
4
I D = 15 A
20
40
Gate Charge
60
80
Qg (nC)
0
100
VGS (V)
1000
500
Switching Time t (ns)
V DD = 100 V
250 V 12
400 V
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
16
VGS
VDS
0
6
20
600
200
250
VDS (V)
Switching Characteristics
Dynamic Input Characteristics
1000
800
50
100
150
Drain to Source Voltage
V GS = 10 V, V DD = 250 V
PW = 10 µs, duty < 1 %
R G =10 Ω
200
100
t d(off)
tf
50
t d(on)
20
10
0.1
tr
0.3
1
3
Drain Current
10
30
ID (A)
100
2SK3235
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current
IDR (A)
20
16
V GS = 0 V
12
5, 10 V
8
4
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD (V)
V DS = 10 V
4
I D = 10mA
3
1mA
0.1mA
2
1
0
-50
0
50
100
150
200
Case Temperature Tc (°C)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 250 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
lse
o
sh
100 µ
1m
10 m
Pulse Width
8
PW
T
T
1
0.01
10 µ
D=
PW
u
tp
01
0.03
PDM
2
0.0
0.
Normalized Transient Thermal Impedance γ s (t)
2SK3235
100 m
PW (s)
1
10
2SK3235
Package Dimensions
15.6 ± 0.3
Unit: mm
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2001
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-3P
—
Conforms
5.0 g
9
2SK3235
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Colophon 2.0
10