SFT4300S.22 SFT4300S.22L Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 2 A, 150 Volts general purpose NPN Transistor DESIGNER’S DATA SHEET SMD.22 Features: Radiation tolerant Fast switching hermetic surface mount device with excellent thermal properties Available with lead extensions (SMD.22L) Complementary use with SFT5333S.22 Available in Reverse Polarity TX, TXV, S-Level screening available SMD.22L PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE Maximum Ratings Symbol Value Units Collector – Emitter Voltage VCEO 80 Volts Collector – Base Voltage VCB 150 Volts Emitter - Base Voltage VBE 8 Volts IC ICmax 2 5 Amps IB 1 Amps PD 15 1.0 W Operating & Storage Temperature Top & Tstg -65 to +200 ºC Maximum Thermal Resistance Junction to Case and to ambient RθJC RθJA 11.67 (typ 8) 175 ºC/W continuous peak Continuous Collector Current Base Current Power Dissipation @ TC = 25ºC Power Dissipation @ TA = 25ºC note 1 note 2 Note1: Derated 85.7 mW/°C above Tc= 25°C Note2: Derated 5.7 mW/°C above TA= 25°C .220±.007 .050±.015 .220±.007 .050±.015 .065 ±.010 .070 ±.010 .005±.002 .040 .134 .030 .140 .150 ±.007 .120 .025 MIN .120 .150 ±.007 .040 .052 .070 .090 .005 TYP NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. .070 .090 DATA SHEET #: TR0097B .005 TYP DOC SFT4300S.22 SFT4300S.22L Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 4/ Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector-Emitter Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Input Capacitance Output Capacitance Switching Times Symbol Min Typ Max Units IC = 30 mA BVCEO(sus) 80 95 - V IC = 0.2 mA BVCBO 150 240 - V IE= 0.2 mA BVEBO 8 9 - V VCE = 40 V; IB = 0 ICEO –– 0.01 5 uA VCB = 90 V; IE = 0 VCB = 90 V; IE = 0; Ta= 100 ºC ICBO1 ICBO2 - - 1 75 uA VBE = 6 V; IC = 0 IEBO –– 0.01 1 uA IC = 1.0 A, VCE = 5 V IC = 2.0 A, VCE = 5 V IC=0.5A, VCE=1V,Ta=-65ºC IC=2.0A, VCE=2V,Ta=-65ºC IC=5.0A, VCE=2V,Ta=-65ºC IC = 1.0 A, IB = 100 mA IC = 2.0 A, IB = 200 mA IC = 5.0 A, IB = 500 mA HFE1 HFE2 HFE7 HFE8 HFE9 VCE(sat)1 VCE(sat)2 VCE(sat)3 50 50 - 45 40 20 0.12 0.22 0.56 200 0.3 0.5 - IC = 5.0 A, IB = 500 mA VBE(sat)3 - 1.1 - V IC = 2.0 A, VCE = 2 V VBE(on) - 0.83 1.2 V IC = 0.5A, VCE = 5 V, f= 10 MHz fT 80 120 - MHz VBE= 8 V, IC= 0, f= 1MHz Cib –– –– 225 pF VCB= 30 V, IE= 0, f= 1MHz Cob –– –– 45 pF VCC = 20 Vdc; IC = 1 A; VEB(off) = 3.7 V; IB1 = IB2= 100 mA; R L= 20Ώ ton toff - 0.06 0.85 0.13 1.5 us NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. V 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC. DATA SHEET #: TR0097B DOC