EMIF04-MMC02F3 4 LINES EMI FILTER AND ESD PROTECTION FOR MULTIMEDIA CARD Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : ■ MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players... Description Flip-Chip (11 bumps) The EMIF04-MMC02F3 is a highly integrated device designed to suppress EMI/RFI noise for MultiMedia Card ports. The EMIF04 Flip-Chip packaging means the package size is equal to the die size. Pin configuration (bump side) This filter includes ESD protection circuitry which prevents damage to the application when subjected to ESD surges up to 15kV. Benefits ■ EMI symmetrical (I/O) low-pass filter ■ High efficiency in EMI filtering ■ Lead free package ■ 400µm pitch ■ Compatible with high speed data rate 3 2 1 I1 O1 I2 VD2 O2 B I3 VD1 O3 C I4 GND O4 D A Schematic VD2 R20 ■ 2 Very low PCB space consuming: < 2 mm Very thin package: 0.60 mm ■ High efficiency in ESD suppression ■ High reliability offered by monolithic integration ■ High reducing of parasitic elements through integration and wafer level packaging Complies with the following standards: IEC61000-4-2: Level 4 June 2005 15kV 8kV (air discharge) (contact discharge) R10 R1 O1 (Data) I1 R2 I2 ■ VD1 O2 (CLK) R3 I3 O3 (CMD) O4 I4 R4 GND Order codes Part number Marking EMIF04-MMC02F3 GP Rev 1 1/9 www.st.com 9 EMIF04-MMC02F3 1 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Table 1. Absolute maximum rating (limiting values) Symbol VPP Tj Parameter Value Unit ESD discharge IEC61000-4-2, air discharge ESD discharge IEC61000-4-2, contact discharge 15 8 kV Junction temperature 125 °C Top Operating temperature range -40 to + 85 °C Tstg Storage temperature range -55 to +150 °C 1 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VBR Breakdown voltage IRM Leakage current VRM Stand-off voltage VCL Clamping voltage IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol VBR IR = 1 mA IRM VRM = +3V Cline 2/9 Test conditions Min. Typ. Max. 6 Unit V 100 VLINE = 0 V, VOSC = 30 mV, F = 1MHz 250 nA 20 pF R1, R2, R3, R4 Tolerance ± 10% 47 Ω R10 Tolerance ± 10% 13 kΩ R20 Tolerance ± 10% 56 kΩ EMIF04-MMC02F3 1 ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Figure 1. S21 attentuation measurements A2 - A3 line Figure 2. EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 0.00 S21 attentuation measurements B1 -B3 line EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 0.00 dB dB -10.00 -10.00 -20.00 -20.00 -30.00 -30.00 -40.00 -40.00 -50.00 -50.00 -60.00 -60.00 100.0k 1.0M 10.0M Line 1 Figure 3. 100.0M f/Hz 1.0G 100.0k 10.0M Line 2 S21 attentuation measurements C1 - C3 line Figure 4. EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 0.00 1.0M 100.0M f/Hz 1.0G S21 attentuation measurements D1 - D3 line EMIF04-MMC02F3_FREQ-RESP-MEAS_PM505 APLAC 7.91 User: ST Microelectronics Feb 02 2005 0.00 dB dB -10.00 -10.00 -20.00 -20.00 -30.00 -30.00 -40.00 -40.00 -50.00 -50.00 -60.00 -60.00 100.0k 1.0M 10.0M Line 3 Figure 5. 100.0M f/Hz 1.0G 100.0k 1.0M 10.0M Line 4 Crosstalk behaviour (A2 - B3 line) Figure 6. 0.00 dB -10.00 25 -20.00 20 100.0M f/Hz 1.0G Line capacitance versus reverse applied voltage CLINE(pF) -30.00 -40.00 -50.00 -60.00 -70.00 15 10 5 -80.00 0 -90.00 0.0 -100.00 100.0k 1.0M 10.0M 100.0M f/Hz Xtalk 3/9 1.0G 0.5 1.0 1.5 2.0 2.5 VLINE(V) 3.0 3.5 4.0 4.5 5.0 EMIF04-MMC02F3 2 Aplac model Figure 7. ESD response to IEC61000-4-2 (+15kV air discharge) on one input V(in) and on one output (Vout). Figure 8. ESD response to IEC61000-4-2 (-15kV air discharge) on one input V(in) and on one output (Vout) Input 10V/d Input 10V/d Output 10V/d Output 10V/d 100ns/d 2 100ns/d Aplac model Figure 9. Device structure Rs Ls I1 O1 Ls Rs Rbump Lbump Port2 Port1 VD1 R10 Rbump Lbump VD2 R20 Bulk I1 Lbump Rbump R1 Rbump Lbump I2 Lbump Rbump R2 Rbump Lbump I3 Lbump Rbump R3 Rbump Lbump I4 Lbump Rbump R4 Rbump Lbump O1 MODEL = demif04_gnd O2 Lbump Rbump D2 Cgnd O4 MODEL = demif04 MODEL = demif04 Lgnd Rgnd 4/9 O3 Bulk EMIF04-MMC02F3 3 Order code Figure 10. Aplac model variables aplacvar R1 47 aplacvar R2 47 aplacvar R3 47 aplacvar R4 47 aplacvar R10 13k aplacvar R20 56k aplacvar Rsub 120m aplacvar Cz 16.65pF aplacvar Cz_gnd 49.95pF aplacvar RS_gnd 480m aplacvar Ls 950pH aplacvar Rs 150m aplacvar Rbump 20m aplacvar Lbump 50pH aplacvar Lgnd 250pH aplacvar Rgnd 200m aplacvar Cgnd 0.6pF 3 Diode Demif04_gnd BV=7 IBV=1m CJO=Cz_gnd M=0.31 RS=RS_gnd VJ=0.6 TT=100n Order code EMIF EMI Filter Number of lines Application (3 letters) and Version (2 digits) Flip Chip 3: Leadfree Pitch = 400µm Bump = 255µm 5/9 Diode Demif04 BV=7 IBV=1m CJO=Cz M=0.31 RS=1 VJ=0.6 TT=100n yy - xxx zz F x EMIF04-MMC02F3 4 Package information 4 Package information Figure 11. Mechanical data 1.57mm ± 30µm 400µm ± 40 185µm ± 10 1.17mm ± 30µm Figure 12. Foot print recommendations Copper pad Diameter : 220µm recommended Solder stencil opening : 330µm recommended Solder mask opening recommendation : 300µm recommended 6/9 605µm ± 55 255µm ± 40 400µm ± 40 Figure 13. Marking Dot, ST logo xx = marking z = back-end location yww = datecode (y = year ww = week) E x x z y ww EMIF04-MMC02F3 5 Flip-chip tape and reel specification 5 Flip-chip tape and reel specification Dot identifying Pin A1 location 3.5 +/- 0.1 ST E xxx yww ST E xxx yww ST E xxx yww 8 +/- 0.3 0.73 +/- 0.05 4 +/- 0.1 User direction of unreeling All dimensions in mm 6 Ordering information Part Number Marking Package Weight Base qty Delivery mode EMIF04-MMC02F3 GP Flip-Chip 2.4 mg 5000 Tape and reel 7” Note: More information is available in the applicatioin notes: - AN1235: ''Flip-Chip: Package description and recommandations for use'' - AN1751: "EMI Filters: Recommendations and measurements" 7/9 1.75 +/- 0.1 Ø 1.5 +/- 0.1 4 +/- 0.1 EMIF04-MMC02F3 7 Revision history 7 8/9 Revision history Date Revision 16-Jun-2005 1 Description of Changes First issue EMIF04-MMC02F3 7 Revision history Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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