June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF4851A HEMT (High Electron Mobility Transistor) is designed for use in S to K band amplifiers and oscillators. The lead-less ceramic package assures minimum parasitic losses. FEATURES High gain and High P1dB Glp=11dB , P1dB=14.5dBm (Typ.) @ f=12GHz Fig.1 APPLICATION S to K band power Amplifiers QUALITY GRADE GG ORDERING INFORMATION Tape & reel 3000pcs./reel Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO Parameter Gate to drain voltage Gate to source voltage V Total power dissipation 100 mW Channel temperature 125 °C Storage temperature -65~125 °C Tstg ELECTRICAL CHARACTERISTICS P1dB Glp V mA PT Tch VGS(off) Unit -5 -5 Drain current V(BR)GDO IDSS Ratings IDSS ID Synbol (Ta=25°C ) Parameter Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. (Ta=25°C ) Test conditions Limits Unit MIN. TYP. -5 -8 MAX -- V 35 60 120 mA Saturated drain current Ig=-10µA VGS=0V,VDS=2.5V Gate to source cut-off voltage VDS=2.5V,ID=500µA -0.1 -0.8 -2.0 V Output Power at 1dB gain VDS=2.5V,ID=25mA 12 14.5 -- dBm Compression f=12GHz VDS=2.5V,ID=25mA 9 11 -- dB Gate to drain breakdown voltage Linear Power Gain f=12GHz,Pin=-5dBm MITSUBISHI (1/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Fig.1 Unit : mm Top Side Bottom 2. 1. ç G 7 1AA © 1. ➀ ➁ 2. © ç 3. ➂ 2. 2. ➁ 3. ç ç ç Square shape electrode is Drain from "A" side view 1. Gate 2. Source 3. Drain MITSUBISHI (2/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS ID vs. VGS 80 70 VGS=-0.1V/STEP V GS=0V VDS=2V 70 DRAIN CURRENTID(mA) DRAIN CURRENT ID(mA) 60 50 40 30 20 10 60 50 40 30 20 10 0 0 0 1 2 3 4 5 -1.0 DRAIN TO SOURCE VOLTAGE V DS(V) -0.8 -0.6 0.0 20 VDS=2.5V ID=25mA f=12GHz Output Power Pout (dBm) Output Power Po (dBm) 20.00 10.00 5.00 0.00 -10 -0.2 Po vs. Pin Po vs. Pin 15.00 -0.4 GATE TO SOURCE VOLTAGEVGS(V) 15 VDS=2V ID=10mA f=12GHz 10 5 0 -5 0 5 -10 10 -5 0 5 10 Input Power Pin (dBm) Input Power Pin (dBm) MITSUBISHI (3/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) S PARAMETERS (Conditions : VDS=2.5V,ID=25mA,Ta=25deg.C) f S11 Angle 0.986 -16.1 0.959 -35.1 0.933 -47.6 0.898 -64.4 0.867 -76.5 0.840 -86.5 0.813 -96.0 0.792 -106.6 0.766 -114.9 0.744 -123.4 0.709 -133.5 0.658 -146.0 0.607 -160.7 0.561 176.4 0.523 151.0 0.542 123.0 0.598 95.1 0.679 70.3 0.760 51.1 0.827 35.4 0.890 21.0 0.921 10.8 0.932 2.6 0.933 -3.9 0.947 -9.0 0.947 -14.4 (GHz) Magn. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S21 Magn. Angle 6.558 165.2 6.385 148.7 6.118 136.8 5.865 123.4 5.505 112.8 5.187 103.8 4.891 94.8 4.710 83.6 4.538 74.9 4.500 66.5 4.514 57.5 4.549 47.0 4.589 36.3 4.607 20.9 4.547 7.2 4.470 -6.8 4.267 -21.7 3.880 -37.6 3.447 -51.9 3.005 -65.2 2.560 -80.4 2.187 -90.3 1.879 -100.1 1.555 -108.1 1.330 -114.7 1.146 -121.8 S12 Magn. Angle 0.015 79.0 0.028 65.3 0.040 56.6 0.050 46.8 0.058 38.6 0.064 32.3 0.069 26.7 0.073 18.8 0.077 14.2 0.083 10.6 0.092 3.1 0.099 -4.6 0.106 -12.3 0.113 -25.3 0.116 -36.3 0.120 -48.5 0.119 -59.8 0.113 -71.3 0.105 -83.2 0.094 -94.0 0.084 -106.2 0.074 -111.9 0.064 -117.3 0.056 -124.3 0.049 -127.9 0.042 -128.9 S22 Magn. Angle 0.539 -13.6 0.531 -30.0 0.525 -38.9 0.502 -49.8 0.498 -58.1 0.492 -63.8 0.487 -67.9 0.487 -74.3 0.486 -77.8 0.483 -81.1 0.468 -86.3 0.437 -91.4 0.392 -97.5 0.324 -109.3 0.241 -118.6 0.140 -131.0 0.030 -165.6 0.097 43.6 0.214 30.0 0.323 19.9 0.407 8.0 0.481 2.4 0.570 -2.3 0.625 -6.3 0.681 -7.6 0.730 -8.8 Gate Source w Reference Point Reference Point Drain Source MITSUBISHI (4/5) June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4851A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. 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Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric or an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer. MITSUBISHI (5/5) June/2004