VISHAY TP0610KL

TP0610KL/BS250KL
Vishay Siliconix
New Product
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on) ()
VGS(th) (V)
6 @ VGS = −10 V
−60
60
10 @ VGS = −4.5 V
ID (A)
1
2
D
3
“S” TP
0610KL
xxyy
Device Marking
Front View
G
2
S
3
“S” = Siliconix Logo
xxyy = Date Code
Ordering Information: TP0610KL-TR1
D
1
D
Top View
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
−0.21
Device Marking
Front View
G
APPLICATIONS
−0.27
−1
1 to −3.0
30
TO-92-18RM
(TO-18 Lead Form)
TO-226AA
(TO-92)
S
D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
“S” BS
250KL
xxyy
Top View
100 G
“S” = Siliconix Logo
xxyy = Date Code
S
Ordering Information: BS250KL-TR1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
−60
Gate-Source Voltage
VGS
"20
Continuous Drain Current
Pulse Drain
TA = 25_C
TA = 70_C
Currenta
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
ID
IDM
TA = 25_C
TA = 70_C
PD
Unit
V
−0.27
−0.22
A
−1.0
0.8
0.51
W
RthJA
156
_C/W
TJ, Tstg
−55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
www.vishay.com
1
TP0610KL/BS250KL
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = −10 µA
−60
VGS(th)
VDS = VGS, ID = −250 µA
−1
Typ
Max
−2.1
−3.0
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate Body Leakage
Gate-Body
IGSS
Zero Gate Voltage Drain Current
IDSS
On State Drain Currenta
On-State
ID(on)
D( )
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward
Voltagea
VDS = 0 V, VGS = "20 V
"10
VDS = 0 V, VGS = "10 V
"200
VDS = 0 V, VGS = "10 V, TJ = 85_C
"500
VDS = 0 V, VGS = "5 V
"100
VDS = −60 V, VGS = 0 V
−1
VDS = −60 V, VGS = 0 V, TJ = 55_C
−10
VDS = −10 V, VGS = −4.5 V
−50
VDS = −10 V, VGS = −10 V
−600
A
nA
A
mA
VGS = −4.5 V, ID = −25 mA
5.5
10
VGS = −10 V, ID = −500 mA
3.1
6
VGS = −10 V, ID = −500 mA, TJ = 125_C
4.7
9
gfs
VDS = −10 V, ID = −100 mA
180
VSD
IS = −200 mA, VGS = 0 V
−0.9
−1.4
1.7
3
VDS = −30 V, VGS = −15 V, ID ^ −500 mA
0.26
rDS(on)
V
mS
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
0.46
Rg
285
td(on)
2.4
5
15.5
25
21
35
12.5
20
Gate Resistance
Turn On Time
Turn-On
VDD = −25 V, RL = 150 ID ^ −150 mA,
mA VGEN = −10 V
Rg = 10 tr
td(off)
Turn Off Time
Turn-Off
tf
nC
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Output Characteristics
1.0
Transfer Characteristics
1200
VGS = 10 V
8V
7V
0.6
I D − Drain Current (mA)
0.8
I D − Drain Current (A)
TJ = −55_C
6V
0.4
5V
0.2
900
25_C
125_C
600
300
4V
0.0
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
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2
5
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
TP0610KL/BS250KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
On-Resistance vs. Drain Current
20
Capacitance
40
VGS = 4.5 V
16
32
C − Capacitance (pF)
r DS(on) − On-Resistance ( )
VGS = 0 V
12
VGS = 5 V
8
VGS = 10 V
4
Ciss
24
16
Coss
8
Crss
0
0
0
200
400
600
800
0
1000
5
ID − Drain Current (mA)
25
1.5
VDS = 30 V
VGS = 10 V @ 500 mA
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
ID = 500 mA
VDS = 48 V
9
6
3
0
0.0
20
On-Resistance vs. Junction Temperature
1.8
12
15
VDS − Drain-to-Source Voltage (V)
Gate Charge
15
10
1.2
VGS = 4.5 V @ 25 mA
0.9
0.6
0.3
0.3
0.6
0.9
1.2
1.5
0.0
−50
1.8
Qg − Total Gate Charge (nC)
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
10
1000
r DS(on) − On-Resistance ( )
I S − Source Current (A)
VGS = 0 V
100
TJ = 125_C
10
TJ = 25_C
TJ = −55_C
ID = 500 mA
6
4
ID = 200 mA
2
0
1
0.00
8
0.3
0.6
0.9
1.2
VSD − Source-to-Drain Voltage (V)
Document Number: 72712
S-40244—Rev. A, 16-Feb-04
1.5
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
www.vishay.com
3
TP0610KL/BS250KL
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Threshold Voltage Variance Over Temperature
Single Pulse Power, Junction-to-Ambient
0.5
20
ID = 250 A
16
0.3
0.2
Power (W)
V GS(th) Variance (V)
0.4
0.1
−0.0
−0.1
12
8
4
−0.2
−0.3
−50
0
−25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
600
Time (sec)
TJ − Junction Temperature (_C)
10
Safe Operating Area
IDM
Limited
rDS(on) Limited
I D − Drain Current (A)
1
1 ms
10 ms
100 ms
0.1
1s
ID(on)
Limited
0.01
10 s
dc
TA = 25_C
Single Pulse
BVDSS Limited
0.001
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72712
S-40244—Rev. A, 16-Feb-04