VISHAY SI1563DH

Si1563DH
New Product
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)
0.280 @ VGS = 4.5 V
1.28
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package
D Fast Switching
0.360 @ VGS = 2.5 V
1.13
APPLICATIONS
D Load Switch for Portable Devices
VDS (V)
N-Channel
20
P-Channel
-20
0.450 @ VGS = 1.8 V
1.00
0.490 @ VGS = -4.5 V
-1.00
0.750 @ VGS = -2.5 V
-0.81
1.10 @ VGS = -1.8 V
-0.67
D1
S2
SOT-363
SC-70 (6-LEADS)
1
6
D1
G1
2
5
G2
D2
3
4
S2
G2
Marking Code
EB
XX
G1
YY
S1
Lot Traceability
and Date Code
Part # Code
S1
D2
N-Channel
P-Channel
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Symbol
5 secs
P-Channel
Steady State
5 secs
Steady State
Drain-Source Voltage
VDS
20
-20
Gate-Source Voltage
VGS
"8
"8
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
1.28
1.13
- 1.00
-0.88
0.92
0.81
-0.72
-0.63
IDM
4.0
A
-3.0
0.61
0.48
-0.61
-0.48
0.74
0.57
0.30
0.57
0.38
0.30
0.16
0.3
TJ, Tstg
Unit
W
_C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
130
170
170
220
80
100
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
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Si1563DH
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 100 mA
N-Ch
0.45
1
VDS = VGS, ID = -100 mA
P-Ch
-0.45
1
VDS = 0 V, VGS = "8
" V
V
N-Ch
"100
P-Ch
"100
VDS = 16 V, VGS = 0 V
N-Ch
1
VDS = -16 V, VGS = 0 V
P-Ch
-1
VDS = 16 V, VGS = 0 V, TJ = 85_C
N-Ch
5
VDS = -16 V, VGS = 0 V, TJ = 85_C
P-Ch
VDS w 5 V, VGS = 4.5 V
N-Ch
2
VDS p -5 V, VGS = -4.5 V
P-Ch
-2
nA
m
mA
-5
A
VGS = 4.5 V, ID = 1.13 A
N-Ch
0.220
0.280
VGS = -4.5 V, ID = -0.88 A
P-Ch
0.400
0.490
VGS = 2.5 V, ID = 0.99 A
N-Ch
0.281
0.360
VGS = -2.5 V, ID = -0.71 A
P-Ch
0.610
0.750
VGS = 1.8 V, ID = 0.20 A
N-Ch
0.344
0.450
VGS = -1.8 V, ID = -0.20 A
P-Ch
0.850
1.10
VDS = 10 V, ID = 1.13 A
N-Ch
2.6
VDS = -10 V, ID = -0.88 A
P-Ch
1.5
IS = 0.48 A, VGS = 0 V
N-Ch
0.8
1.2
IS = -0.48 A, VGS = 0 V
P-Ch
-0.8
-1.2
N-Ch
1.25
2
1.8
W
S
V
Dynamicb
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.13 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
Reverse Recovery Time
tr
td(off)
1.2
0.21
P-Ch
0.3
nC
P-Channel
VDS = -10 V, VGS = -4.5 V, ID = -0.88 A
N-Ch
0.3
P-Ch
0.21
N-Ch
15
25
P-Ch
18
30
N-Channel
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W
N-Ch
22
35
P-Ch
25
40
P-Channel
VDD = -10 V, RL = 20 W
ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W
N-Ch
25
40
P-Ch
15
25
N-Ch
12
20
P-Ch
12
20
N-Ch
30
60
P-Ch
30
60
tf
trr
P-Ch
N-Ch
IF = 0.48 A, di/dt = 100 A/ms
m
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 71963
S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Output Characteristics
Transfer Characteristics
2.0
2.0
VGS = 5 thru 2 V
TC = -55_C
25_C
1.5
1.5 V
I D - Drain Current (A)
I D - Drain Current (A)
1.5
1.0
0.5
125_C
1.0
0.5
1V
0.0
0
1
2
3
0.0
0.0
4
0.5
VDS - Drain-to-Source Voltage (V)
1.0
2.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.6
160
0.5
0.4
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
1.5
VGS = 1.8 V
VGS = 2.5 V
0.3
VGS = 4.5 V
0.2
120
Ciss
80
Coss
40
0.1
Crss
0.0
0.0
0
0.5
1.0
1.5
0
2.0
4
ID - Drain Current (A)
Gate Charge
20
On-Resistance vs. Junction Temperature
VDS = 10 V
ID = 1.28 A
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
16
1.6
3
2
1
0
0.0
12
VDS - Drain-to-Source Voltage (V)
5
4
8
0.3
0.6
0.9
1.2
Qg - Total Gate Charge (nC)
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
1.5
1.4
VGS = 4.5 V
ID = 1.13 A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
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Si1563DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
2
TJ = 150_C
0.5
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
1
TJ = 25_C
0.4
ID = 1.13 A
0.3
0.2
0.1
0.0
0.1
0
0.4
0.2
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.2
5
ID = 100 mA
0.1
4
-0.0
3
Power (W)
V GS(th) Variance (V)
2
-0.1
2
-0.2
1
-0.3
-0.4
-50
-25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
600
Time (sec)
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Ambient
10
IDM Limited
P(t) = 0.0001
P(t) = 0.001
I D - Drain Current (A)
rDS(on) Limited
1
P(t) = 0.01
ID(on)
Limited
P(t) = 0.1
0.1
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 1
P(t) = 10
dc
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
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Document Number: 71963
S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 170_C/W
0.02
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
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Si1563DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Output Characteristics
Transfer Characteristics
3.0
3.0
VGS = 5 thru 3 .5V
3V
2.5 V
2.0
1.5
2V
1.0
1.5 V
0.5
TC = -55_C
2.5
I D - Drain Current (A)
I D - Drain Current (A)
2.5
25_C
2.0
1.5
125_C
1.0
0.5
1V
0.0
0
1
2
3
0.0
0.0
4
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
On-Resistance vs. Drain Current
3.5
Capacitance
160
1.2
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
3.0
VGS = 1.8 V
VGS = 2.5 V
0.8
VGS = 4.5 V
0.4
0.0
0.0
Ciss
120
80
Coss
40
Crss
0
0.5
1.0
1.5
2.0
2.5
3.0
0
2
Gate Charge
r DS(on) - On-Resistance (W)
(Normalized)
VDS = 10 V
ID = 0.9 A
2
1
0.3
0.6
0.9
Qg - Total Gate Charge (nC)
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8
10
12
1.6
3
0
0.0
6
On-Resistance vs. Junction Temperature
5
4
4
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
V GS - Gate-to-Source Voltage (V)
2.5
VGS - Gate-to-Source Voltage (V)
1.6
6
2.0
1.2
1.5
1.4
VGS = 4.5 V
ID = 0.88 A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
Si1563DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.6
2
I S - Source Current (A)
r DS(on) - On-Resistance ( W )
TJ = 150_C
1
TJ = 25_C
1.2
ID = 0.88 A
0.8
0.4
0.0
0.1
0
0.4
0.2
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
3
4
5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.30
5
0.25
ID = 100 mA
4
0.20
0.15
3
Power (W)
V GS(th) Variance (V)
2
0.10
0.05
2
-0.00
-0.05
1
-0.10
-0.15
-50
-25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
600
Time (sec)
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Ambient
10
IDM Limited
P(t) = 0.0001
I D - Drain Current (A)
rDS(on) Limited
1
P(t) = 0.001
ID(on)
Limited
P(t) = 0.01
0.1
P(t) = 0.1
TA = 25_C
Single Pulse
BVDSS Limited
P(t) = 1
P(t) = 10
dc
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
www.vishay.com
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Si1563DH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 170_C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
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10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71963
S-21483—Rev. A, 26-Aug-02
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
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or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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