Si1563DH New Product Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching 0.360 @ VGS = 2.5 V 1.13 APPLICATIONS D Load Switch for Portable Devices VDS (V) N-Channel 20 P-Channel -20 0.450 @ VGS = 1.8 V 1.00 0.490 @ VGS = -4.5 V -1.00 0.750 @ VGS = -2.5 V -0.81 1.10 @ VGS = -1.8 V -0.67 D1 S2 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 G2 Marking Code EB XX G1 YY S1 Lot Traceability and Date Code Part # Code S1 D2 N-Channel P-Channel Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol 5 secs P-Channel Steady State 5 secs Steady State Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS "8 "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 85_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 85_C Operating Junction and Storage Temperature Range PD V 1.28 1.13 - 1.00 -0.88 0.92 0.81 -0.72 -0.63 IDM 4.0 A -3.0 0.61 0.48 -0.61 -0.48 0.74 0.57 0.30 0.57 0.38 0.30 0.16 0.3 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 130 170 170 220 80 100 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71963 S-21483—Rev. A, 26-Aug-02 www.vishay.com 1 Si1563DH New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 100 mA N-Ch 0.45 1 VDS = VGS, ID = -100 mA P-Ch -0.45 1 VDS = 0 V, VGS = "8 " V V N-Ch "100 P-Ch "100 VDS = 16 V, VGS = 0 V N-Ch 1 VDS = -16 V, VGS = 0 V P-Ch -1 VDS = 16 V, VGS = 0 V, TJ = 85_C N-Ch 5 VDS = -16 V, VGS = 0 V, TJ = 85_C P-Ch VDS w 5 V, VGS = 4.5 V N-Ch 2 VDS p -5 V, VGS = -4.5 V P-Ch -2 nA m mA -5 A VGS = 4.5 V, ID = 1.13 A N-Ch 0.220 0.280 VGS = -4.5 V, ID = -0.88 A P-Ch 0.400 0.490 VGS = 2.5 V, ID = 0.99 A N-Ch 0.281 0.360 VGS = -2.5 V, ID = -0.71 A P-Ch 0.610 0.750 VGS = 1.8 V, ID = 0.20 A N-Ch 0.344 0.450 VGS = -1.8 V, ID = -0.20 A P-Ch 0.850 1.10 VDS = 10 V, ID = 1.13 A N-Ch 2.6 VDS = -10 V, ID = -0.88 A P-Ch 1.5 IS = 0.48 A, VGS = 0 V N-Ch 0.8 1.2 IS = -0.48 A, VGS = 0 V P-Ch -0.8 -1.2 N-Ch 1.25 2 1.8 W S V Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time tr td(off) 1.2 0.21 P-Ch 0.3 nC P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.88 A N-Ch 0.3 P-Ch 0.21 N-Ch 15 25 P-Ch 18 30 N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W N-Ch 22 35 P-Ch 25 40 P-Channel VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W N-Ch 25 40 P-Ch 15 25 N-Ch 12 20 P-Ch 12 20 N-Ch 30 60 P-Ch 30 60 tf trr P-Ch N-Ch IF = 0.48 A, di/dt = 100 A/ms m ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71963 S-21483—Rev. A, 26-Aug-02 Si1563DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics Transfer Characteristics 2.0 2.0 VGS = 5 thru 2 V TC = -55_C 25_C 1.5 1.5 V I D - Drain Current (A) I D - Drain Current (A) 1.5 1.0 0.5 125_C 1.0 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.6 160 0.5 0.4 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 VGS = 1.8 V VGS = 2.5 V 0.3 VGS = 4.5 V 0.2 120 Ciss 80 Coss 40 0.1 Crss 0.0 0.0 0 0.5 1.0 1.5 0 2.0 4 ID - Drain Current (A) Gate Charge 20 On-Resistance vs. Junction Temperature VDS = 10 V ID = 1.28 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 16 1.6 3 2 1 0 0.0 12 VDS - Drain-to-Source Voltage (V) 5 4 8 0.3 0.6 0.9 1.2 Qg - Total Gate Charge (nC) Document Number: 71963 S-21483—Rev. A, 26-Aug-02 1.5 1.4 VGS = 4.5 V ID = 1.13 A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si1563DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 2 TJ = 150_C 0.5 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 1 TJ = 25_C 0.4 ID = 1.13 A 0.3 0.2 0.1 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.2 5 ID = 100 mA 0.1 4 -0.0 3 Power (W) V GS(th) Variance (V) 2 -0.1 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 Time (sec) TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 10 IDM Limited P(t) = 0.0001 P(t) = 0.001 I D - Drain Current (A) rDS(on) Limited 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 71963 S-21483—Rev. A, 26-Aug-02 Si1563DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 170_C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 Document Number: 71963 S-21483—Rev. A, 26-Aug-02 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Si1563DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Output Characteristics Transfer Characteristics 3.0 3.0 VGS = 5 thru 3 .5V 3V 2.5 V 2.0 1.5 2V 1.0 1.5 V 0.5 TC = -55_C 2.5 I D - Drain Current (A) I D - Drain Current (A) 2.5 25_C 2.0 1.5 125_C 1.0 0.5 1V 0.0 0 1 2 3 0.0 0.0 4 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 On-Resistance vs. Drain Current 3.5 Capacitance 160 1.2 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 3.0 VGS = 1.8 V VGS = 2.5 V 0.8 VGS = 4.5 V 0.4 0.0 0.0 Ciss 120 80 Coss 40 Crss 0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 Gate Charge r DS(on) - On-Resistance (W) (Normalized) VDS = 10 V ID = 0.9 A 2 1 0.3 0.6 0.9 Qg - Total Gate Charge (nC) www.vishay.com 8 10 12 1.6 3 0 0.0 6 On-Resistance vs. Junction Temperature 5 4 4 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) V GS - Gate-to-Source Voltage (V) 2.5 VGS - Gate-to-Source Voltage (V) 1.6 6 2.0 1.2 1.5 1.4 VGS = 4.5 V ID = 0.88 A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71963 S-21483—Rev. A, 26-Aug-02 Si1563DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.6 2 I S - Source Current (A) r DS(on) - On-Resistance ( W ) TJ = 150_C 1 TJ = 25_C 1.2 ID = 0.88 A 0.8 0.4 0.0 0.1 0 0.4 0.2 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.30 5 0.25 ID = 100 mA 4 0.20 0.15 3 Power (W) V GS(th) Variance (V) 2 0.10 0.05 2 -0.00 -0.05 1 -0.10 -0.15 -50 -25 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 600 Time (sec) TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 10 IDM Limited P(t) = 0.0001 I D - Drain Current (A) rDS(on) Limited 1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 0.1 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited P(t) = 1 P(t) = 10 dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Document Number: 71963 S-21483—Rev. A, 26-Aug-02 www.vishay.com 7 Si1563DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P−CHANNEL Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 170_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 www.vishay.com 8 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71963 S-21483—Rev. A, 26-Aug-02 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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