Si1035X Vishay Siliconix Complementary N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel RDS(on) (Ω) ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 8 at VGS = - 4.5 V - 150 12 at VGS = - 2.5 V - 125 15 at VGS = - 1.8 V - 100 20 at VGS = - 1.5 V - 30 20 P-Channel - 20 • • • • • • • • • Halogen-free Option Available TrenchFET® Power MOSFET: 1.5 V Rated Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 5 Ω P-Channel, 8 Ω Low Threshold: ± 0.9 V (typ.) Fast Switching Speed: 45 ns (typ.) 1.5 V Operation Gate-Source ESD Protected: 2000 V RoHS COMPLIANT BENEFITS • • • • • SC-89 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation Marking Code: M APPLICATIONS Top View Ordering Information: Si1035X-T1-E3 (Lead (Pb)-free) Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) • • • • Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain TA = 25 °C TA = 85 °C Currentb TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) IS PD P-Channel Steady State 5s 20 Steady State - 20 190 140 180 - 155 130 - 110 650 Unit V ±5 IDM Continuous Source Current (Diode Conduction) Maximum Power Dissipationa ID 5s - 145 - 105 - 650 450 380 - 450 - 380 280 250 280 250 145 130 145 130 mA mW TJ, Tstg - 55 to 150 °C ESD 2000 V Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71426 S-80643-Rev. B, 24-Mar-08 www.vishay.com 1 Si1035X Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA N-Ch 0.40 VDS = VGS, ID = - 250 µA P-Ch - 0.40 VDS = 0 V, VGS = ± 2.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea IDSS ID(on) RDS(on) gfs VSD V N-Ch ± 0.5 ± 1.0 P-Ch ± 0.5 ± 1.0 N-Ch ± 1.5 ± 3.0 P-Ch ± 1.0 ± 3.0 VDS = 16 V, VGS = 0 V N-Ch 1 500 VDS = - 16 V, VGS = 0 V P-Ch -1 - 500 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 10 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch - 10 VDS = 5 V, VGS = 4.5 V N-Ch 250 VDS = - 5 V, VGS = - 4.5 V P-Ch - 200 µA nA µA mA VGS = 4.5 V, ID = 200 mA N-Ch 5 VGS = - 4.5 V, ID = - 150 mA P-Ch 8 VGS = 2.5 V, ID = 175 mA N-Ch 7 VGS = - 2.5 V, ID = 125 mA P-Ch 12 VGS = 1.8 V, ID = 150 mA N-Ch 9 VGS = - 1.8 V, ID = - 100 mA P-Ch 15 VDS = 1.5 V, ID = 40 mA N-Ch 10 VDS = - 1.5 V, ID = - 30 mA P-Ch 20 VDS = 10 V, ID = 200 mA N-Ch 0.5 VDS = - 10 V, ID = - 150 mA P-Ch 0.4 IS = 150 mA, VGS = 0 V N-Ch 1.2 IS = - 150 mA, VGS = 0 V P-Ch - 1.2 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time tON N-Channel VDS = 10 V, VGS = 4.5 V, ID = 150 mA P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA N-Ch 750 P-Ch 1500 N-Ch 75 P-Ch 150 N-Ch 225 P-Ch 450 pC N-Channel VDD = 10 V, RL = 47 Ω ID ≅ 250 mA, VGEN = 4.5 V, RG = 10 Ω N-Ch 75 P-Ch 80 P-Channel VDD = - 10 V, RL = 65 Ω ID ≅ - 150 mA, VGEN = - 4.5 V, RG = 10 Ω N-Ch 75 P-Ch 90 ns Turn-Off Time tOFF Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.5 600 TJ = - 55 °C VGS = 5 thru 1.8 V 500 I D - Drain Current (mA) I D - Drain Current (A) 0.4 0.3 0.2 25 °C 400 125 °C 300 200 0.1 100 1V 0.0 0 1 2 3 4 5 0 0.0 6 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 40 80 30 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 0 V f = 1 MHz 20 VGS = 1.8 V Ciss 60 40 Coss 10 20 VGS = 2.5 V VGS = 4.5 V Crss 0 0 0 50 100 150 200 0 250 4 8 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (mA) On-Resistance vs. Drain Current Capacitance 1.6 5 VDS = 10 V ID = 150 mA 1.4 4 3 2 1.2 VGS = 1.8 V ID = 175 mA 1.0 0.8 1 0 0.0 VGS = 4.5 V ID = 200 mA (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 0.2 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 0.4 0.6 0.8 0.6 - 50 - 25 0 25 50 75 100 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 125 www.vishay.com 3 Si1035X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 50 1000 ID = 200 mA 100 TJ = 25 °C TJ = 50 °C 10 1 0.0 40 R DS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C ID = 175 mA 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 3 4 5 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.3 3.0 0.2 2.5 ID = 0.25 mA 2.0 0.1 IGSS - (µA) VGS(th) Variance (V) 2 0.0 1.5 1.0 - 0.1 VGS = 2.8 V 0.5 - 0.2 - 0.3 - 50 - 25 0 25 50 75 100 0.0 - 50 125 - 25 0 25 50 75 TJ - Temperature (°C) IGSS vs. Temperature BV GSS - Gate-to-Source Breakdown Voltage (V) TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature 100 125 7 6 5 4 3 2 1 0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 4 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.5 500 2V VGS = 5 thru 2.5 V TJ = - 55 °C 1.8 V 0.3 0.2 300 125 °C 200 0.1 100 0.0 0 1 2 3 4 5 0 0.0 6 0.5 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 120 VGS = 1.8 V VGS = 0 V f = 1 MHz 100 C - Capacitance (pF) 20 15 VGS = 2.5 V 10 VGS = 4.5 V Ciss 80 60 40 Coss 5 20 0 Crss 0 0 200 400 600 800 1000 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) I D - Drain Current (mA) On-Resistance vs. Drain Current Capacitance 5 1.6 VDS = 10 V ID = 150 mA 4 1.4 3 2 1 0 0.0 VGS = 4.5 V ID = 150 mA (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.5 VDS - Drain-to-Source Voltage (V) 25 R DS(on) - On-Resistance (Ω) 25 °C 400 I D - Drain Current (mA) ID - Drain Current (A) 0.4 1.2 VGS = 1.8 V ID = 125 mA 1.0 0.8 0.2 0.4 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 0.6 0.8 1.0 1.2 1.4 1.6 0.6 - 50 - 25 0 25 50 75 100 Q g - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 125 www.vishay.com 5 Si1035X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1000 50 40 RDS(on) - On-Resistance (Ω) I S - Source Current (mA) TJ = 125 °C 100 TJ = 25 °C TJ = - 55 °C 10 ID = 150 mA 30 20 10 ID = 125 mA 1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 VSD - S o ur c e-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 4 5 6 On-Resistance vs. Gate-to-Source Voltage 0.3 3.0 0.2 2.5 ID = 0.25 mA 0.1 2.0 IGSS - (µA) VGS(th) Variance (V) 2 V GS - Gate-to-Source Voltage (V) 0.0 - 0.1 1.0 - 0.2 0.5 - 0.3 - 50 - 25 0 25 50 75 100 VGS = 2.8 V 1.5 0.0 - 50 125 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage Variance vs. Temperature IGSS vs. Temperature BVGSS - Gate-to-Source Breakdown Voltage (V) TJ - Temperature (°C) 100 125 0 -1 -2 -3 -4 -5 -6 -7 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) BVGSS vs. Temperature www.vishay.com 6 Document Number: 71426 S-80643-Rev. B, 24-Mar-08 Si1035X Vishay Siliconix N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 500 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71426. Document Number: 71426 S-80643-Rev. B, 24-Mar-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1