Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) VDS (V) N-Channel 20 P-Channel –20 rDS(on) () ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = –4.5 V 0.85 1.30 @ VGS = –3.0 V 0.75 S2 TSOP-6 Top View G2 G1 1 6 S1 D 2 5 D G2 3 4 S2 D G1 S1 Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 –20 Gate-Source Voltage VGS 12 12 1.2 0.85 Continuous Drain Current (TJ = 150C) TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation p (S f (Surface M Mounted t d on FR4 Board) B d) TA = 70C Operating Junction and Storage Temperature Range ID 0.95 0.65 IDM 3.5 2.5 IS 1 PD Unit V A –1 1.25 0.8 W TJ, Tstg –55 to 150 C Symbol N- or P- Channel Unit RthJA 100 C/W Parameter Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, 10 sec) For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70778 S-55457—Rev. B, 09-Mar-98 www.vishay.com FaxBack 408-970-5600 2-1 Si3850DV Vishay Siliconix Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA N-Ch 0.6 VDS = VGS, ID = –250 mA P-Ch –0.6 VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain On-State Drain Currenta a D i S O S R i Drain-Source On-State Resistance IDSS ID(on) rDS(on) Forward Transconductancea gfs Diode Forward Voltagea VSD V "100 N-Ch 1 VDS = –20 V, VGS = 0 V P-Ch –1 VDS = 20 V, VGS = 0 V, TJ = 70C N-Ch 10 VDS = –20 V, VGS = 0 V, TJ = 70C P-Ch VDS = 5 V, VGS = 4.5 V N-Ch 3.0 VDS = –5 V, VGS = –4.5 V P-Ch –2.0 nA A mA –10 A VGS = 4.5 V, ID = 0.5 A N-Ch 0.38 VGS = –4.5 V, ID = –0.5 A P-Ch 0.70 0.500 1.00 VGS = 3.0 V, ID = 0.5 A N-Ch 0.55 0.750 VGS = –3.0 V, ID = –0.5 A P-Ch 1.10 1.30 VDS = 10 V, ID = 1.2 A N-Ch 2.7 VDS = –10 V, ID = –0.85 A P-Ch 1.2 IS = 1 A, VGS = 0 V N-Ch 1.2 IS = –1 A, VGS = 0 V P-Ch –1.2 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time N-Ch 0.8 2.0 P-Ch 1.10 2.5 N-Ch 0.25 P-Ch 0.50 N-Ch 0.2 P-Ch 0.2 N-Ch 10 20 P-Ch 8 15 N-Ch 20 40 P-Ch 20 40 N-Ch 20 40 P-Ch 10 20 N-Ch 16 30 P-Ch 8 15 IF = 1 A, di/dt = 100 A/ms N-Ch 40 80 IF = –1 A, di/dt = 100 A/ms P-Ch 40 80 N-Channel N Ch l VDS = 10 V, V VGS = 4.5 4 5 V, V ID = 1 1.2 2A P Ch P-Channel l VDS = –10 V, VGS = –4.5 V ID = –0.85 A td(on) tr N-Channel N Ch Channel l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) P-Channel VDD = –10 10 V V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W tf trr nC C ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70778 S-55457—Rev. B, 09-Mar-98 Si3850DV Vishay Siliconix Output Characteristics Transfer Characteristics 3.5 3.5 3.5 V VGS = 5.0 thru 4.0 V TC = –55C 3.0 3.0 2.5 2.5 I D – Drain Current (A) I D – Drain Current (A) 25C 3.0 V 2.0 1.5 2.5 V 1.0 0.5 2.0 V 1.5 V 125C 2.0 1.5 1.0 0.5 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 120 0.7 100 C – Capacitance (pF) r DS(on)– On-Resistance ( ) VGS = 3.0 V 0.6 VGS = 4.5 V 0.5 0.4 0.3 Ciss 80 60 Coss 40 0.2 20 Crss 0.1 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 4 ID – Drain Current (A) r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 2.0 VGS = 10 V ID = 1.2 A 4 3 2 1 0 0 0.2 0.4 0.6 Qg – Total Gate Charge (nC) Document Number: 70778 S-55457—Rev. B, 09-Mar-98 12 16 20 VDS – Drain-to-Source Voltage (V) Gate Charge 5 8 0.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.2 A 1.6 1.2 0.8 0.4 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si3850DV Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 r DS(on)– On-Resistance ( W ) 4.0 I S – Source Current (A) TJ = 150C 1.0 TJ = 25C 0.6 0.4 ID = 1.2 A 0.2 0 0.1 0 0.3 0.6 0.9 1.2 1.5 0 VSD – Source-to-Drain Voltage (V) Threshold Voltage 2 3 4 5 Single Pulse Power 30 0.2 0.1 24 ID = 250 mA –0.0 Power (W) V GS(th) Variance (V) 1 VGS – Gate-to-Source Voltage (V) –0.1 18 12 –0.2 6 –0.3 –0.4 –50 –25 0 25 50 75 100 125 150 0 0.001 TJ – Temperature (C) 0.010 0.100 1.000 10.000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70778 S-55457—Rev. B, 09-Mar-98 Si3850DV Vishay Siliconix Output Characteristics Transfer Characteristics 2.5 2.5 TC = –55C VGS = 5.0 thru 4.0 V 3.5 V 2.0 I D – Drain Current (A) I D – Drain Current (A) 2.0 1.5 3.0 V 1.0 2.5 V 0.5 25C 1.5 125C 1.0 0.5 2.0 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 2.0 2.5 3.0 3.5 4.0 Capacitance 120 VGS = 3.0 V 100 1.6 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 1.5 VGS – Gate-to-Source Voltage (V) 2.0 1.2 VGS = 4.5 V 0.8 Ciss 80 60 20 0 0 0.5 1.0 1.5 2.0 Coss 40 0.4 0 Crss 0 2.5 4 ID – Drain Current (A) 2.0 r DS(on)– On-Resistance ( ) (Normalized) VGS = 10 V ID = 0.85 A 6 4 2 0 0 0.3 0.6 0.9 1.2 Qg – Total Gate Charge (nC) Document Number: 70778 S-55457—Rev. B, 09-Mar-98 8 12 16 20 VDS – Drain-to-Source Voltage (V) Gate Charge 8 V GS – Gate-to-Source Voltage (V) 1.0 1.5 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 0.85 A 1.6 1.2 0.8 0.4 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-5 Si3850DV Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.0 r DS(on)– On-Resistance ( W ) 4.0 I S – Source Current (A) TJ = 150C 1.0 TJ = 25C 1.5 1.0 ID =0.85 A 0.5 0 0.1 0 0.3 0.6 0.9 1.2 1.5 0 VSD – Source-to-Drain Voltage (V) Threshold Voltage 2 3 4 5 Single Pulse Power 30 0.4 0.3 24 0.2 Power (W) V GS(th) Variance (V) 1 VGS – Gate-to-Source Voltage (V) ID = 250 mA 0.1 18 12 0.0 6 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.001 TJ – Temperature (C) 0.010 0.100 1.000 10.000 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-6 Document Number: 70778 S-55457—Rev. B, 09-Mar-98