VISHAY SI3850DV

Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) ()
ID (A)
0.500 @ VGS = 4.5 V
1.2
0.750 @ VGS = 3.0 V
1.0
1.00 @ VGS = –4.5 V
0.85
1.30 @ VGS = –3.0 V
0.75
S2
TSOP-6
Top View
G2
G1
1
6
S1
D
2
5
D
G2
3
4
S2
D
G1
S1
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
–20
Gate-Source Voltage
VGS
12
12
1.2
0.85
Continuous Drain Current (TJ = 150C)
TA = 25C
TA = 70C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25C
Maximum Power Dissipation
p
(S f
(Surface
M
Mounted
t d on FR4 Board)
B d)
TA = 70C
Operating Junction and Storage Temperature Range
ID
0.95
0.65
IDM
3.5
2.5
IS
1
PD
Unit
V
A
–1
1.25
0.8
W
TJ, Tstg
–55 to 150
C
Symbol
N- or P- Channel
Unit
RthJA
100
C/W
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, 10 sec)
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
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2-1
Si3850DV
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 mA
N-Ch
0.6
VDS = VGS, ID = –250 mA
P-Ch
–0.6
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
Z
G
V l
D i Current
C
Zero Gate
Voltage
Drain
On-State Drain Currenta
a
D i S
O S
R i
Drain-Source
On-State
Resistance
IDSS
ID(on)
rDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
V
"100
N-Ch
1
VDS = –20 V, VGS = 0 V
P-Ch
–1
VDS = 20 V, VGS = 0 V, TJ = 70C
N-Ch
10
VDS = –20 V, VGS = 0 V, TJ = 70C
P-Ch
VDS = 5 V, VGS = 4.5 V
N-Ch
3.0
VDS = –5 V, VGS = –4.5 V
P-Ch
–2.0
nA
A
mA
–10
A
VGS = 4.5 V, ID = 0.5 A
N-Ch
0.38
VGS = –4.5 V, ID = –0.5 A
P-Ch
0.70
0.500
1.00
VGS = 3.0 V, ID = 0.5 A
N-Ch
0.55
0.750
VGS = –3.0 V, ID = –0.5 A
P-Ch
1.10
1.30
VDS = 10 V, ID = 1.2 A
N-Ch
2.7
VDS = –10 V, ID = –0.85 A
P-Ch
1.2
IS = 1 A, VGS = 0 V
N-Ch
1.2
IS = –1 A, VGS = 0 V
P-Ch
–1.2
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
N-Ch
0.8
2.0
P-Ch
1.10
2.5
N-Ch
0.25
P-Ch
0.50
N-Ch
0.2
P-Ch
0.2
N-Ch
10
20
P-Ch
8
15
N-Ch
20
40
P-Ch
20
40
N-Ch
20
40
P-Ch
10
20
N-Ch
16
30
P-Ch
8
15
IF = 1 A, di/dt = 100 A/ms
N-Ch
40
80
IF = –1 A, di/dt = 100 A/ms
P-Ch
40
80
N-Channel
N
Ch
l
VDS = 10 V,
V VGS = 4.5
4 5 V,
V ID = 1
1.2
2A
P Ch
P-Channel
l
VDS = –10 V, VGS = –4.5 V
ID = –0.85 A
td(on)
tr
N-Channel
N
Ch
Channel
l
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
td(off)
P-Channel
VDD = –10
10 V
V, RL = 10 W
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
tf
trr
nC
C
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
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Document Number: 70778
S-55457—Rev. B, 09-Mar-98
Si3850DV
Vishay Siliconix
Output Characteristics
Transfer Characteristics
3.5
3.5
3.5 V
VGS = 5.0 thru 4.0 V
TC = –55C
3.0
3.0
2.5
2.5
I D – Drain Current (A)
I D – Drain Current (A)
25C
3.0 V
2.0
1.5
2.5 V
1.0
0.5
2.0 V
1.5 V
125C
2.0
1.5
1.0
0.5
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS – Gate-to-Source Voltage (V)
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
120
0.7
100
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
VGS = 3.0 V
0.6
VGS = 4.5 V
0.5
0.4
0.3
Ciss
80
60
Coss
40
0.2
20
Crss
0.1
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
3.5
4
ID – Drain Current (A)
r DS(on)– On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
2.0
VGS = 10 V
ID = 1.2 A
4
3
2
1
0
0
0.2
0.4
0.6
Qg – Total Gate Charge (nC)
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
12
16
20
VDS – Drain-to-Source Voltage (V)
Gate Charge
5
8
0.8
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 1.2 A
1.6
1.2
0.8
0.4
0
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
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Si3850DV
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
r DS(on)– On-Resistance ( W )
4.0
I S – Source Current (A)
TJ = 150C
1.0
TJ = 25C
0.6
0.4
ID = 1.2 A
0.2
0
0.1
0
0.3
0.6
0.9
1.2
1.5
0
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
2
3
4
5
Single Pulse Power
30
0.2
0.1
24
ID = 250 mA
–0.0
Power (W)
V GS(th) Variance (V)
1
VGS – Gate-to-Source Voltage (V)
–0.1
18
12
–0.2
6
–0.3
–0.4
–50
–25
0
25
50
75
100
125
150
0
0.001
TJ – Temperature (C)
0.010
0.100
1.000
10.000
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 100C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70778
S-55457—Rev. B, 09-Mar-98
Si3850DV
Vishay Siliconix
Output Characteristics
Transfer Characteristics
2.5
2.5
TC = –55C
VGS = 5.0 thru 4.0 V
3.5 V
2.0
I D – Drain Current (A)
I D – Drain Current (A)
2.0
1.5
3.0 V
1.0
2.5 V
0.5
25C
1.5
125C
1.0
0.5
2.0 V
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
2.0
2.5
3.0
3.5
4.0
Capacitance
120
VGS = 3.0 V
100
1.6
C – Capacitance (pF)
r DS(on)– On-Resistance ( )
1.5
VGS – Gate-to-Source Voltage (V)
2.0
1.2
VGS = 4.5 V
0.8
Ciss
80
60
20
0
0
0.5
1.0
1.5
2.0
Coss
40
0.4
0
Crss
0
2.5
4
ID – Drain Current (A)
2.0
r DS(on)– On-Resistance ( )
(Normalized)
VGS = 10 V
ID = 0.85 A
6
4
2
0
0
0.3
0.6
0.9
1.2
Qg – Total Gate Charge (nC)
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
8
12
16
20
VDS – Drain-to-Source Voltage (V)
Gate Charge
8
V GS – Gate-to-Source Voltage (V)
1.0
1.5
1.8
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 0.85 A
1.6
1.2
0.8
0.4
0
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
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2-5
Si3850DV
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.0
r DS(on)– On-Resistance ( W )
4.0
I S – Source Current (A)
TJ = 150C
1.0
TJ = 25C
1.5
1.0
ID =0.85 A
0.5
0
0.1
0
0.3
0.6
0.9
1.2
1.5
0
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
2
3
4
5
Single Pulse Power
30
0.4
0.3
24
0.2
Power (W)
V GS(th) Variance (V)
1
VGS – Gate-to-Source Voltage (V)
ID = 250 mA
0.1
18
12
0.0
6
–0.1
–0.2
–50
–25
0
25
50
75
100
125
150
0
0.001
TJ – Temperature (C)
0.010
0.100
1.000
10.000
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 100C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
10–4
10–3
4. Surface Mounted
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
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2-6
Document Number: 70778
S-55457—Rev. B, 09-Mar-98