SUP18N15-95 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.095 @ VGS = 10 V 18 0.100 @ VGS = 6 V 17.5 150 APPLICATIONS D 42-V Automotive Bus D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP18N15-95 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 125_C Pulsed Drain Current Repetitive Avalanche Energya Maximum Power L = 0.1 mH Dissipationa TC = 25_C Operating Junction and Storage Temperature Range V 18 ID IDM Avalanche Current Unit 10.3 25 A IAR 15 EAR 16.2 PD 88b W TJ, Tstg –55 to 175 _C Unit mJ THERMAL RESISTANCE RATINGS Symbol Limit Junction-to-Ambient (Free Air) Parameter RthJA 85 Junction-to-Case RthJC 1.7 _ _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. Document Number: 71642 S-04093—Rev. A, 25-Jun-01 www.vishay.com 1 SUP18N15-95 New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 120 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb IDSS ID(on) VDS = 120 V, VGS = 0 V, TJ = 125_C 50 VDS = 120 V, VGS = 0 V, TJ = 175_C 250 VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Resistanceb Forward Transconductanceb rDS(on) gfs V 25 nA mA m A 0.077 0.095 VGS = 10 V, ID = 15 A, TJ = 125_C 0.190 VGS = 10 V, ID = 15 A, TJ = 175_C 0.250 VGS = 6 V, ID = 10 A 0.081 VDS = 15 V, ID = 15 A 25 W 0.100 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 70 Total Gate Chargec Qg 20 Gate-Source Chargec Qgs 900 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 75 V, VGS = 10 V, ID = 15 A 115 pF 25 5.5 nC Gate-Drain Chargec Qgd 7 Turn-On Delay Timec td(on) 8 12 35 55 17 25 30 45 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDD = 75 V, RL = 5 W ID ^ 15 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is 15 Pulsed Current ISM 25 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 15 A, VGS = 0 V trr IRM(REC) Qrr IF = 15 A, di/dt = 100 A/ms m 0.9 1.5 V 55 85 ns 5 8 A 0.13 0.34 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Guaranteed by design, not subject to production testing. b. Independent of operating temperature. www.vishay.com 2 Document Number: 71642 S-04093—Rev. A, 25-Jun-01 SUP18N15-95 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 25 25 VGS = 10 thru 6 V 20 I D – Drain Current (A) I D – Drain Current (A) 20 15 5V 10 5 3V 15 10 TC = 125_C 5 25_C 4V –55_C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 40 0.14 TC = –55_C 0.12 25_C 24 r DS(on)– On-Resistance ( W ) g fs – Transconductance (S) 32 125_C 16 8 0 0.10 VGS = 6 V 0.08 VGS = 10 V 0.06 0.04 0.02 0.00 0 5 10 15 20 25 0 5 10 ID – Drain Current (A) 20 25 32 40 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 1500 1200 C – Capacitance (pF) 15 Ciss 900 600 300 Crss Coss 0 VDS = 75 V ID = 15 A 16 12 8 4 0 0 20 40 60 80 VDS – Drain-to-Source Voltage (V) Document Number: 71642 S-04093—Rev. A, 25-Jun-01 100 0 8 16 24 Qg – Total Gate Charge (nC) www.vishay.com 3 SUP18N15-95 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.8 VGS = 10 V ID = 15 A I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) 2.4 100 2.0 1.6 1.2 0.8 TJ = 150_C 10 TJ = 25_C 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 185 180 V (BR)DSS (V) 175 170 165 160 155 150 145 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) www.vishay.com 4 Document Number: 71642 S-04093—Rev. A, 25-Jun-01 SUP18N15-95 New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 20 100 I D – Drain Current (A) I D – Drain Current (A) 10 ms Limited by rDS(on) 15 10 5 100 ms 10 1 ms 1 10 ms 100 ms 1 s, dc TC = 25_C Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71642 S-04093—Rev. A, 25-Jun-01 www.vishay.com 5