ISC 2SC4230

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC4230
DESCRIPTION
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min)
·Fast Switching speed
APPLICATIONS
·Electronic ballasts for fluorescent lighting
·Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
1200
V
ww
w
IC
Collector Current-Continuous
ICM
Collector Current-Peak
V
7
V
2
A
4
A
IB
Base Current-Continuous
1
A
IBM
Base Current-Peak
2
A
PT
Total Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.5
℃/W
isc Website:www.iscsemi.cn
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c
.
i
m
e
s
c
s
.i
800
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC4230
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.5
V
ICBO
Collector Cutoff Current
At rated Voltage
100
μA
ICEO
Collector Cutoff Current
At rated Voltage
100
μA
IEBO
Emitter Cutoff Current
At rated Voltage
100
μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
fT
Switching times
w
w
ton
Turn-on Time
tstg
Storage Time
tf
B
n
c
.
i
m
e
IC= 1mA ; VCE= 5V
IC= 0.2A ; VCE= 10V
IC= 1A , IB1= 0.2A; IB2= -0.4A
RL= 250Ω; VBB2= 4V
Fall Time
isc Website:www.iscsemi.cn
V
B
s
c
s
i
.
w
Current-Gain—Bandwidth Product
800
UNIT
2
8
7
8
MHz
0.5
μs
3.5
μs
0.3
μs