Inchange Semiconductor Product Specification 2SD2015 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・DARLINGTON APPLICATIONS ・Driver for solenoid,relay and motor and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 150 V Collector-emitter voltage Open base 120 V Emitter-base voltage Open collector 6 V 4 A 0.5 A 25 W IC Collector current IB Base current PC Collector dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD2015 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2A ;IB=2mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=2mA 2.0 V ICBO Collector cut-off current VCB=150V; IE=0 10 μA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=2V Transition frequency IC=0.1A ; VCE=12V fT COB CONDITIONS MIN TYP. MAX 120 V 2000 40 R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Collector output capacitance f=1MHz;VCB=10V UNIT MHz 40 pF 0.6 μs 5.0 μs 2.0 μs Switching times ton ts tf Turn-on time Storage time IC=2.0A IB1=-IB2=10mA VCC=40V ,RL=20Ω Fall time 2 Inchange Semiconductor Product Specification 2SD2015 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 Outline dimensions 3