ISC 2N6295

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6294 2N6295
DESCRIPTION
・With TO-66 package
・DARLINGTON
・Complement to type 2N6296/6297
APPLICATIONS
・For high gain amplifier and medium
speed switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
导体
半
电
Absolute maximum ratings(Ta=25℃)
SYMBOL
固
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
2N6295
2N6294
Open base
2N6295
Open collector
V
80
60
V
80
5
V
Collector current
4
A
ICM
Collector current-Peak
8
A
IB
Base current
80
mA
PT
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
MAX
UNIT
3.5
℃/W
IC
Emitter-base voltage
UNIT
60
Open emitter
M
E
S
GE
N
A
H
INC
Collector-emitter voltage
C
U
D
ICON
2N6294
Collector-base voltage
TOR
VALUE
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance from junction to case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6294 2N6295
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6294
V(BR)CEO
Collector-emitter
breakdown voltage
MIN
TYP.
MAX
UNIT
60
IC=50mA ; IB=0
2N6295
V
80
VCEsat-1
Collector-emitter saturation voltage
IC=2A ;IB=8mA
2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A ;IB=40mA
3.0
V
Base-emitter saturation voltage
IC=4A ;IB=40mA
4.0
V
VBE
Base -emitter on voltage
IC=2A ; VCE=3V
2.8
V
ICEX
Collector cut-off current
VCE=RatedVCE;VBE(off)=1.5V
TC=150℃
0.5
5.0
mA
ICEO
Collector cut-off current
VCE=1/2Rated VCEO; IB=0
0.5
mA
2.0
mA
VBEsat
IEBO
导体
半
电
固
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
M
E
S
GE
N
A
H
INC
R
O
T
UC
D
N
O
IC
VEB=5V; IC=0
IC=2A ; VCE=3V
750
IC=4A ; VCE=3V
100
4.0
fT
Transition frequency
IC=1.5A ; VCE=3V;f=1.0MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
2
18000
MHz
120
pF
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6294 2N6295
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6294 2N6295
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
4