Si4833DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode VDS (V) rDS(on) () –30 ID (A) 0.085 @ VGS = –10 V 3.5 0.180 @ VGS = –4.5 V 2.5 VKA (V) VF (V) Diode Forward Voltage IF (A) 30 0.5 V @ 1.0 A 1.4 SO-8 A 1 8 K A 2 7 K S 3 6 D G 4 5 D S K D A G Top View Parameter Symbol Limit Drain-Source Voltage (MOSFET) VDS –30 Reverse Voltage (Schottky) VKA 30 Gate-Source Voltage (MOSFET) VGS 20 Continuous Drain Current (TJ = 150C) 150 C) (MOSFET)a, b TA = 25C TA = 70C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b TA = 25C 2.8 IDM 20 IS – 1.7 IF 1.4 IFM 30 A 2 1.3 PD W 1.9 TA = 70C Operating Junction and Storage Temperature Range V 3.5 ID TA = 25C TA = 70C Unit 1.2 TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambient (t 10 sec)a Maximum Junction-to-Ambient (t = steady state)a Device Symbol Typical MOSFET Schottky Unit 62.5 Schottky MOSFET Maximum 65 RthJA 90 C/W 92 Notes a. Surface Mounted on FR4 Board. b. t 10 sec. Document Number: 70796 S-56941—Rev. B, 02-Nov-98 www.vishay.com FaxBack 408-970-5600 2-1 Si4833DY Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –1.0 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea Forward Transconductancea Diode Forward Voltagea ID(on) rDS(on) DS( ) V VDS = 0 V, VGS = "20 V "100 VDS = –30 V, VGS = 0 V –1 VDS = –30 V, VGS = 0 V, TJ = 55C –25 VDS w –5 V, VGS = –10 V –15 nA mA A VGS = –10 V, ID = –2.5 A 0.066 0.085 VGS = –4.5 V, ID = –1.8 A 0.125 0.180 gfs VDS = –10 V, ID = –2.5 A 5.0 VSD IS = –1.7 A, VGS = 0 V –0.8 –1.2 8.7 15 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = –10 10 V V, VGS = –10 10 V V, ID = –2.5 25A nC C 1.9 Gate-Drain Charge Qgd 1.3 Turn-On Delay Time td(on) 7 15 tr 9 18 14 27 8 15 50 80 Typ Max Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = –10 10 V V,, RL = 10 W ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W IF = –1.7 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Parameter Forward Voltage Drop Maximum Reverse Leakage Current M i R L k C Junction Capacitance www.vishay.com FaxBack 408-970-5600 2-2 Symbol VF Irm CT Test Condition Min IF = 1.0 A 0.45 0.5 IF = 1.0 A, TJ = 125C 0.36 0.42 Vr = 30 V 0.004 0.100 Unit V Vr = 30 V, TJ = 100C 0.7 10 Vr = –30 V, TJ = 125C 3.0 20 Vr = 10 V 62 mA A pF Document Number: 70796 S-56941—Rev. B, 02-Nov-98 Si4833DY Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 VGS = 10, 9, 8, 7, 6 V TC = –55C 25C 16 5V I D – Drain Current (A) I D – Drain Current (A) 16 12 8 4V 4 125C 12 8 4 3V 0 0 0 2 4 6 8 0 2 VDS – Drain-to-Source Voltage (V) 4 6 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 700 0.40 Ciss 0.32 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 600 0.24 VGS = 4.5 V 0.16 VGS = 10 V 500 400 300 Coss 200 0.08 Crss 100 0 0 0 3 6 9 12 0 15 6 ID – Drain Current (A) 2.0 1.8 r DS(on) – On-Resistance ( ) (Normalized) VDS = 10 V ID = 2.5 A 8 12 18 24 30 VDS – Drain-to-Source Voltage (V) Gate Charge 10 V GS – Gate-to-Source Voltage (V) 8 6 4 2 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 1.6 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70796 S-56941—Rev. B, 02-Nov-98 8 10 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si4833DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 20 10 TJ = 150C TJ = 25C 0.4 0.3 0.2 ID = 2.5 A 0.1 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 4 6 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.8 35 ID = 250 mA 0.6 28 0.4 21 Power (W) V GS(th) Variance (V) 2 0.2 14 0.0 7 –0.2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 1 0.1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70796 S-56941—Rev. B, 02-Nov-98 Si4833DY Vishay Siliconix Reverse Current vs. Junction Temperature Forward Voltage Drop 3 1 1 0.1 I F – Forward Current (A) I R – Reverse Current (mA) 20 10 30 V 10 V 20 V 0.01 TJ = 150C TJ = 25C 0.1 0.001 0.01 0.0001 0 25 50 75 100 125 150 0 TJ – Junction Temperature (C) 0.2 0.3 0.4 0.5 0.6 VF – Forward Voltage Drop (V) Capacitance 250 CT – Junction Capacitance (pF) 0.1 200 150 100 50 0 0 4 8 12 16 20 VKA – Reverse Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 92C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 10–3 4. Surface Mounted 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 70796 S-56941—Rev. B, 02-Nov-98 www.vishay.com FaxBack 408-970-5600 2-5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1