ONSEMI 2N2905A

2N2905A
Switching Transistor
PNP Silicon Epitaxial
Features
• MIL−PRF−19500/290 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
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COLLECTOR
3
Temperature Range Screening
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PT
800
5.13
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PT
3.0
20
W
mW/°C
TJ, Tstg
−65 to +200
°C
Operating and Storage Junction
Temperature Range
1
EMITTER
TO−39
CASE 205AB
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
195
°C/W
Thermal Resistance, Junction−to−Case
RqJC
50
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
TO−39
Bulk
JAN2N2905A
JANTX2N2905A
JANTXV2N2905A
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 0
1
Publication Order Number:
2N2905A/D
2N2905A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)CEO
−60
−
Vdc
Collector−Base Cutoff Current (VCE = −60 Vdc)
ICES
−
−1.0
mAdc
Collector to Base Cutoff Current
(VCB = −50 Vdc)
(VCB = −50 Vdc, TA = 150°C)
(VCB = −60 Vdc)
ICBO
−
−
−
−0.01
−10
−10
Emitter to Base Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 3.5 Vdc)
IEBO
−
−
−10
−0.050
75
100
100
100
50
50
−
450
−
300
−
−
−
−
−0.4
−1.6
−
−
−1.3
−2.6
2.0
−
100
−
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0)
mAdc
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc) (Note 1)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 1)
(IC = −1.0 mAdc, VCE = −10 Vdc, TA = −55°C)
Collector −Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 1)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Small Signal Short−Circuit Forward Current Transfer Ratio
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
|hfe|
Small Signal Short−Circuit Forward Current Transfer Ratio
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1 kHz)
hfe
−
−
Output Capacitance (VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz)
Cibo
−
30
pF
SWITCHING CHARACTERISTICS
Turn−On Time
See MIL−PRF−19500/290
ton
−
45
ns
Turn−Off Time
See MIL−PRF−19500/290
toff
−
300
ns
1. Pulse Test: See section 4 of MIL−STD−750.
http://onsemi.com
2
2N2905A
PACKAGE DIMENSIONS
TO−39 3−Lead
CASE 205AB−01
ISSUE O
B
A
B
DETAIL X
U
P
C
L
R
F
U
A
SEATING
PLANE
K
NOTE 5
E
T
NOTE 7
D NOTES 4 & 6
3X
0.007 (0.18MM) A B S C
DETAIL X
M
N
H
2
1
3
J
M
C
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.
DIM
A
B
C
D
E
F
H
J
K
L
M
N
P
R
T
U
MILLIMETERS
MIN
MAX
8.89
9.40
8.00
8.51
6.10
6.60
0.41
0.48
0.23
3.18
0.41
0.48
0.71
0.86
0.73
1.02
12.70
14.73
6.35
--45_BSC
5.08 BSC
--1.27
1.37 BSC
--0.76
2.54
---
INCHES
MIN
MAX
0.350
0.370
0.315
0.335
0.240
0.260
0.016
0.019
0.009
0.125
0.016
0.019
0.028
0.034
0.029
0.040
0.500
0.580
0.250
--45 _BSC
0.200 BSC
--0.050
0.054 BSC
--0.030
0.100
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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3
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
2N2905A/D