SavantIC Semiconductor Product Specification 2SD1026 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-Continuous 15 A ICM Collector current-Peak 22 A IB Base current 1 A IBM Base current-Peak 2 A PT Total power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification 2SD1026 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat CONDITIONS MAX UNIT IC=10A; IB=20mA 1.5 V Base-emitter saturation voltage IC=10A; IB=20mA 2.0 V ICEO Collector cut-off current VCE=100V; IB=0 0.1 mA ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=10A ; VCE=3V fT Transition frequency IC=1.5A ; VCE=10V ton Turn-on time ts Storage time tf Fall time IC=15A; IB1=IB2=20mA RL=2>;VBB2=4V 2 MIN TYP. 1500 30000 20 MHz 2 µs 5 µs 3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD1026