isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD873 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL n c . i m e s c s i . w PARAMETER w w MAX UNIT 160 V 140 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 16 A IB Base Current-Continuous 4 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD873 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A 1.4 V VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 4V 2.2 V ICBO Collector Cutoff Current VCB= 140V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance m e s isc fT w. w w ton Turn-on Time tstg Storage Time Fall Time isc Website：www.iscsemi.cn MIN TYP. IC= 16A; VCE= 4V MAX 140 n c . i UNIT V B IC= 8A; VCE= 4V Current-Gain—Bandwidth Product Switching Times tf CONDITIONS 15 60 5 IE= 0; VCB= 10V; ftest= 1.0MHz 350 pF IC= 1A; VCE= 4V 1.5 MHz 2.5 μs VCC= 50V, RL= 10Ω,IB1= -IB2= 0.5A 4.5 1.4