Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SD2028 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Large current capacity. 0.55 With Zener diode (11±3V) between collector and base. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low collector-to-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage, With Zener diode (11±3V) Parameter VCBO 8 V Collector-emitter voltage, With Zener diode (11±3V) VCEO 8 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse) ICP 1.5 A mW Collector dissipation PC 200 Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol IcBO VCB = 6V , IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V , IC = 0 100 nA DC current Gain hFE VCE = 2V , IC = 50mA fT VCE = 2V , IC = 50mA 200 MHz Cob VCB = 5V , f = 1MHz 12 pF Gain bandwidth product Output capacitance Testconditons Min Typ 200 900 Collector-emitter saturation voltage VCE(sat) IC = 100mA , IB = 10mA 50 120 mV Base-emitter saturation voltage VBE(sat) IC = 100mA , IB = 10mA 0.8 1.2 V Collector-to-base breakdown voltage V(BR)CBO IC = 100ìA , IE = 0 8 11 14 V Collector-to-emitter breakdown voltage V(BR)CEO IC = 100ìA , RBE = 8 11 14 V Emitter-to-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V hFE Classification LT Marking Rank hFE 6 200 7 400 300 8 600 450 900 www.kexin.com.cn 1