KEXIN 2SD2028

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SD2028
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Large current capacity.
0.55
With Zener diode (11±3V) between collector and base.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low collector-to-emitter saturation voltage.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage, With Zener diode (11±3V)
Parameter
VCBO
8
V
Collector-emitter voltage, With Zener diode (11±3V)
VCEO
8
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
0.7
A
Collector current (pulse)
ICP
1.5
A
mW
Collector dissipation
PC
200
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = 6V , IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 4V , IC = 0
100
nA
DC current Gain
hFE
VCE = 2V , IC = 50mA
fT
VCE = 2V , IC = 50mA
200
MHz
Cob
VCB = 5V , f = 1MHz
12
pF
Gain bandwidth product
Output capacitance
Testconditons
Min
Typ
200
900
Collector-emitter saturation voltage
VCE(sat) IC = 100mA , IB = 10mA
50
120
mV
Base-emitter saturation voltage
VBE(sat) IC = 100mA , IB = 10mA
0.8
1.2
V
Collector-to-base breakdown voltage
V(BR)CBO IC = 100ìA , IE = 0
8
11
14
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 100ìA , RBE =
8
11
14
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
hFE Classification
LT
Marking
Rank
hFE
6
200
7
400
300
8
600
450
900
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