SKM 600GA125D > (3 ?@ $ Absolute Maximum Ratings Symbol Conditions IGBT A > (3 ? A > )3& ? 4C )(&& 30& < > 0& ? 2&& < 0&& < D (& )& G > (3 ? 3&& < > 0& ? *3& < 0&& < *"&& < 3&& < 2& 111 I )3& +)(3- ? )(3 ? 2&&& 4C>(# Ultra Fast IGBT Modules SKM 600GA125D > "&& E ; (& E F )(&& Units > (3 ? SEMITRANS® 4 Values A > )(3 ? Inverse Diode H A > )3& ? H4C H4C>(#H HC > )& E 1 A > )3& ? Module +4CA ! Features ! " # $ $$% "&'()** +$,- *.*/ "01) 2&/)(3/3" Typical Applications 4 )&& 567 $ ! $ 8 9(& 567 Remarks : ; 3&&< $ =, 5 ! $ =, , $1 <@ ) 1 > (3 ?@ $ Characteristics Symbol Conditions IGBT +- > @ > )" < > & @ > & +- > )3 min. typ. max. Units 2@3 3@3 "@3 A > (3 ? &@)3 &@23 < A > (3 ? )@3 )@'3 A > )(3 ? )@' A > (3? 2@3 A > )(3? " > 2&& <@ > )3 A > (3? 1 A > )(3? 1 > (3@ > & > ) C67 *@* 3@* J J *@03 2 *" *@0 H H *@3 H K > 0 I(& 22&& 4 A > ? )@(3 L 0& '& *& 3'& "& M $+ $+ 4 > (@3 L 4 > (@3 J > "&& > 2&&< A > )(3 ? > D )3 4+A- M &@&2) ./8 GA 1 06-10-2009 NOS © by SEMIKRON SKM 600GA125D Characteristics Symbol Conditions Inverse Diode H > H > 2&& <E > & H& min. typ. max. Units A > (3 ? 1 ( (@3 A > )(3 ? 1 )@0 A > (3 ? )@) )@( A > )(3 ? H ® SEMITRANS 4 Ultra Fast IGBT Modules A > (3 ? (@* *@* A > )(3 ? 44C K H > 2&& < > & E > "&& 4+A-: $$ J J A > )(3 ? 2"& "3 < G M &@&N ./8 (& 6 Module SKM 600GA125D Features O )3 4PIP 1@ 4+- $ C 5 C > ? &@)0 J &@&*0 ./8 * 3 (@3 +)@)- 3 +(- **& ! ! " # $ $$% "&'()** +$,- *.*/ "01) 2&/)(3/3" Typical Applications 4 )&& 567 $ ! $ 8 9(& 567 Remarks : ; 3&&< $ =, 5 ! $ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. =, , $1 GA 2 06-10-2009 NOS © by SEMIKRON SKM 600GA125D SEMITRANS® 4 Zth Symbol Zth(j-c)l Conditions Values Units 4 4 4 4 >) >( >* >2 >) >( >* (N N (@" &@2 &@)&2* &@&&N &@&&) 5/8 5/8 5/8 5/8 >2 &@&&&( 4 4 4 4 >) >( >* >2 >) >( >* "( (* 2@( &@0 &@&3"" &@&)"" &@&&)3 5/8 5/8 5/8 5/8 >2 &@&&&( Zth(j-c)D Ultra Fast IGBT Modules SKM 600GA125D Features ! " # $ $$% "&'()** +$,- *.*/ "01) 2&/)(3/3" Typical Applications 4 )&& 567 $ ! $ 8 9(& 567 Remarks : ; 3&&< $ =, 5 ! $ =, , $1 GA 3 06-10-2009 NOS © by SEMIKRON SKM 600GA125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 06-10-2009 NOS © by SEMIKRON SKM 600GA125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 06-10-2009 NOS © by SEMIKRON SKM 600GA125D UL Recognized File 63 532 : 3N :3N 6 < 06-10-2009 NOS © by SEMIKRON