FAIRCHILD FDS8958A_10

FDS8958A_F085
tm
Dual N & P-Channel PowerTrench MOSFET
General Description
Features
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
•
Q1:
•
Q2:
P-Channel
-5A, -30V
RDS(on) = 0.052Ω @ VGS = -10V
RDS(on) = 0.080Ω @ VGS = -4.5V
•
Fast switching speed
•
High power and handling capability in a widely
used surface mount package
•
Qualified to AEC Q101
•
RoHS Compliant
DD2
DD2
5
DD1
Q2
4
6
7
G2
S2 G
SO-8
Pin 1 SO-8
G1
S1 S
S
3
Q1
2
8
S
Absolute Maximum Ratings
Symbol
RDS(on) = 0.028Ω @ VGS = 10V
RDS(on) = 0.040Ω @ VGS = 4.5V
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D1
D
N-Channel
7.0A, 30V
1
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current
PD
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Q1
- Continuous
30
(Note 1a)
±20
-5
(Note 1a)
20
2
1.6
-20
2
1.6
W
0.9
54
0.9
13
mJ
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 3)
Thermal Resistance, Junction-to-Case
A
-55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
V
V
30
EAS
RθJC
Units
±20
7
(Note 1c)
RθJA
Q2
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
February 2010
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958A
FDS8958A_F085
13”
12mm
2500 units
©2010 Fairchild Semiconductor Corporation
FDS8958A_F085 Rev. A
1
www.fairchildsemi.com
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
IGSSF
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse VGS = -20 V,
∆BVDSS
∆TJ
IDSS
On Characteristics
ID = 250 µA
VGS = 0 V,
VGS = 0 V,
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
VDS = -24 V,
VGS = 0 V
VGS = 20 V,
VDS = 0 V
VDS = 0 V
Q1
Q2
Q1
Q2
Q1
Q2
All
30
-30
V
25
-23
All
mV/°C
1
-1
100
µA
-100
nA
3
-3
V
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = 250 µA
VDS = VGS,
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V,
ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
ID = 6 A
VGS = 4.5 V,
ID = -5 A
VGS = -10 V,
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V,
ID = -4 A
VGS = 10 V,
VDS = 5 V
VGS = -10 V,
VDS = -5 V
VDS = 5 V,
ID = 7 A
VDS = -5 V,
ID =-5 A
Q1
Q2
Q1
Q2
Q1
Q1
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1
-1
Q2
Q1
Q2
Q1
Q2
1.9
-1.7
-4.5
4.5
19
27
24
28
42
40
42
57
65
52
78
80
20
-20
mV/°C
mΩ
A
25
10
S
575
528
145
132
65
70
2.1
6.0
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Q2
Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz
RG
Gate Resistance
FDS8958A_F085 Rev. A
VGS = 15 mV,
f = 1.0 MHz
2
pF
pF
Ω
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics
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Symbol
(continued)
Parameter
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
TA = 25°C unless otherwise noted
Test Conditions
Type Min
Typ
Max Units
(Note 2)
Q1
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
VDD = -15 V, ID = -1 A,
VGS = -10V, RGEN = 6 Ω
Q1
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
7
5
13
23
14
3
9
11.4
9.6
1.7
2.2
2.1
1.7
16
14
10
24
37
25
6
17
16
13
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Plused Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
trr
Qrr
VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A
Q1
IF = 7 A, diF/dt = 100 A/µs
Q2
IF = -5 A, diF/dt = 100 A/µs
(Note 2)
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.75
-0.88
19
19
9
6
1.3
-1.3
20
-20
1.2
-1.2
A
A
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user'
s board design.
a) 78°/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°/W when
2
mounted on a .02 in
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1).
Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2).
FDS8958A_F085 Rev. A
3
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VGS = 10.0V
2.2
4.0V
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT (A)
16
6.0V
4.5V
12
8
3.0V
4
1.8
1.4
0
4.5V
5.0
6.0V
10.0V
1
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
2
0
Figure 1. On-Region Characteristics.
4
8
12
ID, DRAIN CURRENT (A)
16
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.08
ID = 7A
VGS = 10.0V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0
0.6
0
1.2
1
0.8
0.6
ID = 3.5A
0.07
0.06
0.05
TA = 125oC
0.04
0.03
TA = 25oC
0.02
0.01
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
16
ID, DRAIN CURRENT (A)
VGS = 3.5V
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q1 (N-Channel)
12
TA = 125oC
-55oC
8
25oC
4
0
10
TA = 125oC
1
0.1
25oC
0.01
-55oC
0.001
0.0001
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
0
Figure 5. Transfer Characteristics.
FDS8958A_F085 Rev. A
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
4
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800
10
VGS, GATE-SOURCE VOLTAGE (V)
ID = 7A
VDS = 10V
f = 1MHz
VGS = 0 V
20V
8
CAPACITANCE (pF)
600
15V
6
4
2
Ciss
400
Coss
200
Crss
0
0
0
2
4
6
8
Qg, GATE CHARGE (nC)
10
0
12
Figure 7. Gate Charge Characteristics.
5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
100
10
ID, DRAIN CURRENT (A)
10
IAS, AVALANCHE CURRENT (A)
100µs
RDS(ON) LIMIT
1ms
10ms
1s
1
100ms
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
o
Tj=25
Tj=125
TA = 25 C
1
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
0.1
1
10
100
tAV, TIME IN AVALANCHE (mS)
Figure 9. Maximum Safe Operating Area.
Figure 10. Unclamped Inductive Switching
Capability Figure
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q1 (N-Channel)
P(pk), PEAK TRANSIENT POWER (W)
50
SINGLE PULSE
RθJ A = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t 1, TIME (sec)
Figure 11. Single Pulse Maximum Power Dissipation.
FDS8958A_F085 Rev. A
5
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2
-ID, DRAIN CURRENT (A)
VGS = -10V
-6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
-5.0V
-4.5V
20
-4.0V
10
-3.5V
-3.0V
0
1.8
VGS=-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
-7.0V
1.2
1
2
3
4
5
6
0
6
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
18
24
30
-ID, DRAIN CURRENT (A)
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
1.6
ID = -5A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-10V
1
0.8
0
1.4
1.2
1
0.8
0.6
ID = -2.5A
0.2
0.15
TA = 125oC
0.1
TA = 25oC
0.05
0
-50
-25
0
25
50
75
100
125
150
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
25oC
TA = -55oC
12
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
-8.0V
FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q2 (P-Channel)
125oC
9
6
3
0
1
1.5
2
2.5
3
3.5
4
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
4.5
0
-VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
FDS8958A_F085 Rev. A
VGS =0V
10
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
6
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r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
R θJA (t) = r(t) * R θA
R θJ A = 135 °C/W
0.2
0.1
0.1
0.05
P(pk)
P(pk)
0.02
0.01
tt1
0.01
SINGLE PULSE
0.001
0.0001
0.001
tt22
T J - T A = P * R θJ A(t)
Duty Cycle, D = t1 / t 2
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 23. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8958A_F085 Rev. A
7
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FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics: Q2 (P-Channel)
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
FDS8958A_F085 Rev. A
8
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FDS8958A_F085 Dual N & P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
PowerTrench®
FRFET®
The Power Franchise®
®
Auto-SPM™
Global Power ResourceSM
PowerXS™
Green FPS™
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Programmable Active Droop™
Green FPS™ e-Series™
CorePLUS™
QFET®
TinyBoost™
QS™
Gmax™
CorePOWER™
TinyBuck™
Quiet Series™
GTO™
CROSSVOLT™
TinyCalc™
IntelliMAX™
RapidConfigure™
CTL™
TinyLogic®
ISOPLANAR™
Current Transfer Logic™
™
TINYOPTO™
®
MegaBuck™
DEUXPEED
TinyPower™
Dual Cool™
Saving our world, 1mW/W/kW at a time™
MICROCOUPLER™
TinyPWM™
EcoSPARK®
SignalWise™
MicroFET™
TinyWire™
EfficentMax™
SmartMax™
MicroPak™
TriFault Detect™
SMART START™
MicroPak2™
®
TRUECURRENT™*
MillerDrive™
SPM®
μSerDes™
STEALTH™
MotionMax™
Fairchild®
SuperFET™
Motion-SPM™
Fairchild Semiconductor®
SuperSOT™-3
OptiHiT™
FACT Quiet Series™
UHC®
SuperSOT™-6
OPTOLOGIC®
FACT®
®
Ultra FRFET™
®
OPTOPLANAR
SuperSOT™-8
FAST
®
UniFET™
SupreMOS™
FastvCore™
VCX™
SyncFET™
FETBench™
VisualMax™
Sync-Lock™
FlashWriter® *
PDP SPM™
XS™
®*
FPS™
Power-SPM™
F-PFS™