HGTG30N60C3D S E M I C O N D U C T O R 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features • • • • • Package o 63A, 600V at TC = +25 C Typical Fall Time - 230ns at TJ = +150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode JEDEC STYLE TO-247 E C G Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. G PACKAGING AVAILABILITY PART NUMBER HGTG30N60C3D PACKAGE TO-247 BRAND E G30N60C3D NOTE: When ordering, use the entire part number. Formerly Developmental Type TA49014. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = +125oC, RGE = 25Ω. HGTG30N60C3D 600 UNITS V 63 30 25 252 ±20 ±30 60A at 600V 208 1.67 -40 to +150 260 4 15 A A A A V V W W/oC oC oC µs µs HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1995 1 File Number 4041 Specifications HGTG30N60C3D Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter-Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 25 - V Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Switching SOA Gate-Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VCE = BVCES TC = +25oC - - 250 µA VCE = BVCES TC = +150oC - - 3.0 mA IC = IC110, VGE = 15V TC = +25oC - 1.5 1.8 V TC = +150oC - 1.7 2.0 V VGE(TH) IC = 250µA, VCE = VGE TC = +25oC 3.0 5.2 6.0 V IGES VGE = ±20V - - ±100 nA SSOA TJ = +150oC, VGE = 15V, RG = 3Ω, L = 100µH VCE(PK) = 480V 200 - - A VCE(PK) = 600V 60 - - A IC = IC110, VCE = 0.5 BVCES - 8.1 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 162 180 nC VGE = 20V - 216 250 nC - 40 - ns - 45 - ns - 320 400 ns - 230 275 ns ICES VCE(SAT) VGEP QG(ON) tD(ON)I tRI tD(OFF)I TJ = +150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 3Ω, L = 100µH Current Fall Time tFI Turn-On Energy EON - 1050 - µJ Turn-Off Energy (Note 1) EOFF - 2500 - µJ Diode Forward Voltage VEC IEC = 30A - 1.75 2.2 V Diode Reverse Recovery Time tRR IEC = 30A, dIEC/dt = 100A/µs - 52 60 ns IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns IGBT - - 0.6 oC/W Diode - - 1.3 oC/W Thermal Resistance RθJC NOTE: 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses. 2 HGTG30N60C3D 150 ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250µs DUTY CYCLE <0.5%, VCE = 10V 125 100 TC = +150oC 75 o TC = +25 C 50 TC = -40oC 25 0 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC 150 VGE = 15.0V 9.5V 100 9.0V 75 8.5V 50 7.0V 0 12 7.5V 0 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) TC = -40oC 125 100 +25oC 75 TC = +150oC 50 25 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) ICE , DC COLLECTOR CURRENT (A) 60 50 40 30 20 10 50 75 100 125 TC , CASE TEMPERATURE (oC) PULSE DURATION = 250µs DUTY CYCLE <0.5% VGE = 15V 125 TC = +150oC 100 TC = -40oC TC = +25oC 75 50 25 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE VGE = 15V 0 25 10 150 5 FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE 70 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2. SATURATION CHARACTERISTICS 150 TC = 8.0V 25 FIGURE 1. TRANSFER CHARACTERISTICS PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 10.0V 12.0V 125 150 FIGURE 5. MAX. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 25 500 VCE = 360V, RGE = 25Ω, TJ = +125oC 450 20 400 ISC 350 300 15 250 10 200 tSC 150 5 10 13 11 12 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 100 15 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves HGTG30N60C3D Typical Performance Curves (Continued) 500 TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V tD(OFF)I , TURN-OFF DELAY TIME (ns) tD(ON)I , TURN-ON DELAY TIME (ns) 200 100 VGE = 10V 50 40 VGE = 15V 30 20 10 10 50 30 40 ICE , COLLECTOR-EMITTER CURRENT (A) 20 VGE = 10V 200 10 50 20 30 40 ICE , COLLECTOR-EMITTER CURRENT (A) 60 FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 500 TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V tFI , FALL TIME (ns) tRI , TURN-ON RISE TIME (ns) VGE = 15V 300 400 VGE = 10V 100 VGE = 15V 10 10 20 30 40 50 ICE , COLLECTOR-EMITTER CURRENT (A) 7.0 6.0 5.0 VGE = 10V 4.0 3.0 2.0 0 10 VGE = 15V 50 30 40 ICE , COLLECTOR-EMITTER CURRENT (A) 20 200 VGE = 15V 50 20 30 40 ICE , COLLECTOR-EMITTER CURRENT (A) 60 6.0 TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 1.0 VGE = 10V FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT EOFF , TURN-OFF ENERGY LOSS (mJ) 8.0 300 100 10 60 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT EON , TURN-ON ENERGY LOSS (mJ) 400 100 60 FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 500 TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 5.0 4.0 VGE = 10V or 15V 3.0 2.0 1.0 0 10 60 FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 20 30 40 50 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 4 60 HGTG30N60C3D (Continued) ICE, COLLECTOR-EMITTER CURRENT (A) fMAX , OPERATING FREQUENCY (kHz) 500 TJ = +150oC, TC = +75oC RG = 3Ω, L = 100µH 100 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 VGE = 10V PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 0.6oC/W 1 5 10 20 30 40 ICE, COLLECTOR-EMITTER CURRENT (A) VCE , COLLECTOR - EMITTER VOLTAGE (V) C, CAPACITANCE (pF) CIES 6000 5000 4000 3000 2000 COES 1000 CRES 5 10 15 20 LIMITED BY CIRCUIT 100 50 0 100 200 400 500 600 25 IG REF = 3.54mA, RL = 20Ω, TC = +25oC 600 FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE 15 12 480 VCE = 600V 9 360 VCE = 400V 240 6 VCE = 200V 3 120 0 0 40 80 120 QG , GATE CHARGE (nC) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE 300 FIGURE 14. SWITCHING SAFE OPERATING AREA FREQUENCY = 400kHz 0 150 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 8000 0 TJ = 150oC, VGE = 15V, L = 100µH 200 0 60 FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 7000 250 160 0 200 FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 0.2 t1 0.1 10-1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 5 101 VGE, GATE-EMITTER VOLTAGE (V) Typical Performance Curves HGTG30N60C3D Typical Performance Curves (Continued) 60 200 tR , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) TC = +25oC, dIEC/dt = 100A/µs +100oC 10 +150oC 1 0 0.5 +25oC 2.0 1.0 1.5 VEC , FORWARD VOLTAGE (V) 2.5 50 tRR 40 30 tA 20 tB 10 0 3.0 1 5 10 IEC , FORWARD CURRENT (A) 30 FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP Test Circuit and Waveforms 90% L = 100µH RHRP3060 10% VGE EOFF RG = 3Ω EON VCE 90% + - VDD = 480V ICE 10% tD(OFF)I tRI tFI FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT tD(ON)I FIGURE 21. SWITCHING TEST WAVEFORMS 6 HGTG30N60C3D Operating Frequency Information Handling Precautions for IGBTs Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as †“ECCOSORBD LD26” or equivalent. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/ RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. †Trademark Emerson and Cumming, Inc. 7 HGTG30N60C3D Packaging A E TO-247 TERM. 4 ØS 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE ØP INCHES Q SYMBOL MIN MAX MIN MAX NOTES A 0.180 0.190 4.58 4.82 - ØR b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 b1 D 0.800 0.820 20.32 20.82 - b2 E 0.605 0.625 15.37 15.87 - D L1 L c e 0.219 TYP 5.56 TYP 4 e1 0.438 BSC 11.12 BSC 4 b 2 1 MILLIMETERS 3 3 J1 e 2 1 BACK VIEW e1 LEAD NO. 1 - GATE LEAD NO. 2 - COLLECTOR LEAD NO. 3 - EMITTER TERM. 4 - COLLECTOR J1 0.090 0.105 2.29 2.66 5 L 0.620 0.640 15.75 16.25 - L1 0.145 0.155 3.69 3.93 1 ØP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - ØR 0.195 0.205 4.96 5.20 - ØS 0.260 0.270 6.61 6.85 - NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. 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