HARRIS HGTG30N60C3D

HGTG30N60C3D
S E M I C O N D U C T O R
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
August 1995
Features
•
•
•
•
•
Package
o
63A, 600V at TC = +25 C
Typical Fall Time - 230ns at TJ = +150oC
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
JEDEC STYLE TO-247
E
C
G
Description
The HGTG30N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between +25oC and +150oC. The IGBT used is the development
type TA49051. The diode used in anti-parallel with the IGBT is
the development type TA49053.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
G
PACKAGING AVAILABILITY
PART NUMBER
HGTG30N60C3D
PACKAGE
TO-247
BRAND
E
G30N60C3D
NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49014.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = +125oC, RGE = 25Ω.
HGTG30N60C3D
600
UNITS
V
63
30
25
252
±20
±30
60A at 600V
208
1.67
-40 to +150
260
4
15
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1995
1
File Number
4041
Specifications HGTG30N60C3D
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
25
-
V
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
Gate-Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
VCE = BVCES
TC = +25oC
-
-
250
µA
VCE = BVCES
TC = +150oC
-
-
3.0
mA
IC = IC110,
VGE = 15V
TC = +25oC
-
1.5
1.8
V
TC = +150oC
-
1.7
2.0
V
VGE(TH)
IC = 250µA,
VCE = VGE
TC = +25oC
3.0
5.2
6.0
V
IGES
VGE = ±20V
-
-
±100
nA
SSOA
TJ = +150oC,
VGE = 15V,
RG = 3Ω,
L = 100µH
VCE(PK) = 480V
200
-
-
A
VCE(PK) = 600V
60
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
8.1
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
162
180
nC
VGE = 20V
-
216
250
nC
-
40
-
ns
-
45
-
ns
-
320
400
ns
-
230
275
ns
ICES
VCE(SAT)
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
TJ = +150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 3Ω,
L = 100µH
Current Fall Time
tFI
Turn-On Energy
EON
-
1050
-
µJ
Turn-Off Energy (Note 1)
EOFF
-
2500
-
µJ
Diode Forward Voltage
VEC
IEC = 30A
-
1.75
2.2
V
Diode Reverse Recovery Time
tRR
IEC = 30A, dIEC/dt = 100A/µs
-
52
60
ns
IEC = 1.0A, dIEC/dt = 100A/µs
-
42
50
ns
IGBT
-
-
0.6
oC/W
Diode
-
-
1.3
oC/W
Thermal Resistance
RθJC
NOTE:
1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
2
HGTG30N60C3D
150
ICE, COLLECTOR-EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
125
100
TC = +150oC
75
o
TC = +25 C
50
TC = -40oC
25
0
4
6
8
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC
150
VGE = 15.0V
9.5V
100
9.0V
75
8.5V
50
7.0V
0
12
7.5V
0
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
TC = -40oC
125
100
+25oC
75
TC = +150oC
50
25
0
0
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
ICE , DC COLLECTOR CURRENT (A)
60
50
40
30
20
10
50
75
100
125
TC , CASE TEMPERATURE (oC)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
VGE = 15V
125
TC = +150oC
100
TC = -40oC
TC = +25oC
75
50
25
0
0
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
VGE = 15V
0
25
10
150
5
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
70
2
4
6
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
150
TC =
8.0V
25
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
10.0V
12.0V
125
150
FIGURE 5. MAX. DC COLLECTOR CURRENT AS A FUNCTION
OF CASE TEMPERATURE
25
500
VCE = 360V, RGE = 25Ω, TJ = +125oC
450
20
400
ISC
350
300
15
250
10
200
tSC
150
5
10
13
11
12
14
VGE , GATE-TO-EMITTER VOLTAGE (V)
100
15
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
Typical Performance Curves
HGTG30N60C3D
Typical Performance Curves
(Continued)
500
TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
tD(OFF)I , TURN-OFF DELAY TIME (ns)
tD(ON)I , TURN-ON DELAY TIME (ns)
200
100
VGE = 10V
50
40
VGE = 15V
30
20
10
10
50
30
40
ICE , COLLECTOR-EMITTER CURRENT (A)
20
VGE = 10V
200
10
50
20
30
40
ICE , COLLECTOR-EMITTER CURRENT (A)
60
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
500
TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
tFI , FALL TIME (ns)
tRI , TURN-ON RISE TIME (ns)
VGE = 15V
300
400
VGE = 10V
100
VGE = 15V
10
10
20
30
40
50
ICE , COLLECTOR-EMITTER CURRENT (A)
7.0
6.0
5.0
VGE = 10V
4.0
3.0
2.0
0
10
VGE = 15V
50
30
40
ICE , COLLECTOR-EMITTER CURRENT (A)
20
200
VGE = 15V
50
20
30
40
ICE , COLLECTOR-EMITTER CURRENT (A)
60
6.0
TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
1.0
VGE = 10V
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
EOFF , TURN-OFF ENERGY LOSS (mJ)
8.0
300
100
10
60
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
EON , TURN-ON ENERGY LOSS (mJ)
400
100
60
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
500
TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
TJ = +150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
5.0
4.0
VGE = 10V or 15V
3.0
2.0
1.0
0
10
60
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
20
30
40
50
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
4
60
HGTG30N60C3D
(Continued)
ICE, COLLECTOR-EMITTER CURRENT (A)
fMAX , OPERATING FREQUENCY (kHz)
500
TJ = +150oC, TC = +75oC
RG = 3Ω, L = 100µH
100
VGE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
10
VGE = 10V
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.6oC/W
1
5
10
20
30
40
ICE, COLLECTOR-EMITTER CURRENT (A)
VCE , COLLECTOR - EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
CIES
6000
5000
4000
3000
2000
COES
1000
CRES
5
10
15
20
LIMITED BY
CIRCUIT
100
50
0
100
200
400
500
600
25
IG REF = 3.54mA, RL = 20Ω, TC = +25oC
600
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
15
12
480
VCE = 600V
9
360
VCE = 400V
240
6
VCE = 200V
3
120
0
0
40
80
120
QG , GATE CHARGE (nC)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
300
FIGURE 14. SWITCHING SAFE OPERATING AREA
FREQUENCY = 400kHz
0
150
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
8000
0
TJ = 150oC, VGE = 15V, L = 100µH
200
0
60
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
7000
250
160
0
200
FIGURE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
t1
0.1
10-1
PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
101
VGE, GATE-EMITTER VOLTAGE (V)
Typical Performance Curves
HGTG30N60C3D
Typical Performance Curves
(Continued)
60
200
tR , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
TC = +25oC, dIEC/dt = 100A/µs
+100oC
10
+150oC
1
0
0.5
+25oC
2.0
1.0
1.5
VEC , FORWARD VOLTAGE (V)
2.5
50
tRR
40
30
tA
20
tB
10
0
3.0
1
5
10
IEC , FORWARD CURRENT (A)
30
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD
CURRENT
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF
FORWARD VOLTAGE DROP
Test Circuit and Waveforms
90%
L = 100µH
RHRP3060
10%
VGE
EOFF
RG = 3Ω
EON
VCE
90%
+
-
VDD = 480V
ICE
10%
tD(OFF)I
tRI
tFI
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
tD(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
6
HGTG30N60C3D
Operating Frequency Information
Handling Precautions for IGBTs
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as †“ECCOSORBD LD26” or equivalent.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX. tD(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX - TC)/
RθJC. The sum of device switching and conduction losses
must not exceed PD . A 50% duty factor was used (Figure
13) and the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail
losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
†Trademark Emerson and Cumming, Inc.
7
HGTG30N60C3D
Packaging
A
E
TO-247
TERM. 4
ØS
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
ØP
INCHES
Q
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.180
0.190
4.58
4.82
-
ØR
b
0.046
0.051
1.17
1.29
2, 3
b1
0.060
0.070
1.53
1.77
1, 2
b2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
b1
D
0.800
0.820
20.32
20.82
-
b2
E
0.605
0.625
15.37
15.87
-
D
L1
L
c
e
0.219 TYP
5.56 TYP
4
e1
0.438 BSC
11.12 BSC
4
b
2
1
MILLIMETERS
3
3
J1
e
2
1
BACK VIEW
e1
LEAD NO. 1
- GATE
LEAD NO. 2
- COLLECTOR
LEAD NO. 3
- EMITTER
TERM. 4
- COLLECTOR
J1
0.090
0.105
2.29
2.66
5
L
0.620
0.640
15.75
16.25
-
L1
0.145
0.155
3.69
3.93
1
ØP
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
ØR
0.195
0.205
4.96
5.20
-
ØS
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS
UNITED STATES
Harris Semiconductor
P. O. Box 883, Mail Stop 53-210
Melbourne, FL 32902
TEL: 1-800-442-7747
(407) 729-4984
FAX: (407) 729-5321
EUROPE
Harris Semiconductor
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
S E M I C O N D U C T O R
8
ASIA
Harris Semiconductor PTE Ltd.
No. 1 Tannery Road
Cencon 1, #09-01
Singapore 1334
TEL: (65) 748-4200
FAX: (65) 748-0400