HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS(on) Ω 500 V 34 A 120 mΩ Ω 500 V 40 A 110 mΩ trr ≤ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, Note 1 IAR TC = 25°C 34 40 176 192 44 48 A A A A A A EAR EAS TC = 25°C TC = 25°C 60 2.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 15 V/ns PD TC = 25°C 310 W -55 ... +150 150 -55 ... +150 °C °C °C Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) 300 °C z 2500 V~ z 5 g 44N50Q 48N50Q 44N50Q 48N50Q 44N50Q 48N50Q TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250µA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 125°C RDS(on) VGS = 10 V, ID = IT Notes 2, 3 44N50Q 48N50Q © 2003 IXYS All rights reserved Isolated backside* G = Gate S = Source * Patent pending z Rugged polysilicon gate cell structure Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies DC choppers V 2.0 4.0 V z ±100 nA z 120 mΩ 110 mΩ IXYS advanced low Qg process Rated for Unclamped Inductive Load Switching (UIS) z Fast intrinsic diode 500 100 µA 2 mA D = Drain AC motor control Advantages z Easy assembly z Space savings z High power density DS98702D(08/03) IXFR 44N50Q IXFR 48N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT Notes 2, 3 42 S 7000 pF 960 pF C rss 230 pF td(on) 33 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 30 tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 22 ns td(off) RG = 1 Ω (External), Notes 2, 3 75 ns 10 ns 190 nC 40 nC 86 nC tf Qg(on) Qgs Qgd VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 RthJC 0.40 RthCK 0.15 Source-Drain Diode Test Conditions IS VGS = 0 V ISM Repetitive; Note 1 VSD IF = IT, VGS = 0 V, Notes 2, 3 t rr IRM K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol QRM K/W IF = 25A,-di/dt = 100 A/µs, VR = 100 V 48 A 192 A 1.5 V 250 ns 1.0 µC 10 A ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IXFR44N50Q: IT = 22 A IXFR48N50Q: IT = 24 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXFR 44N50Q IXFR 48N50Q Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 48 120 VGS = 10V 7V 42 90 6V 30 I D - Amperes I D - Amperes 36 24 18 12 VGS = 10V 8V 7V 60 6V 30 5V 6 5V 0 0 0 1 2 3 4 5 6 7 8 0 V D S - Volts Fig. 3. Output Characteristics @ 125 Deg. C 48 10 12 V D S - Volts 14 16 18 20 2.4 R D S (on) - Normalized I D - Amperes 8 VGS = 10V 2.6 30 24 18 5V 2.2 2 1.8 I D = 48A 1.6 I D = 24A 1.4 1.2 1 0.8 6 0.6 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e 3.4 45 VGS = 10V 3.1 40 2.8 35 TJ = 125ºC 2.5 I D - Amperes R D S (on) - Normalized 6 2.8 36 12 4 Fig. 4. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature VGS = 10V 7V 6V 42 2 2.2 1.9 1.6 1.3 30 25 20 15 10 TJ = 25ºC 1 0.7 5 0 0 12 24 36 48 60 72 I D - Amperes © 2003 IXYS All rights reserved 84 96 108 120 -50 -25 0 25 50 75 1 00 TC - Degrees Centigrade 125 150 IXFR 44N50Q IXFR 48N50Q Fig. 8. Transconductance Fig. 7. Input Adm ittance 60 80 54 70 60 42 g f s - Siemens I D - Amperes 48 36 30 24 TJ = 125ºC 25ºC -40ºC 18 12 TJ = -40ºC 25ºC 125ºC 50 40 30 20 10 6 0 0 3.5 4 4.5 5 5.5 6 6.5 0 6 12 18 V G S - Volts 100 90 9 80 8 70 7 60 50 TJ = 125ºC 36 42 48 54 60 VDS = 250V I D = 24A I G = 10mA 6 5 4 3 30 TJ = 25ºC 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 20 40 60 80 100 120 140 160 180 200 Q G - nanoCoulombs V S D - Volts Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is tan ce Fig. 11. Capacitance 10000 1 f = 1MHz C iss R (th) J C - (ºC/W) Capacitance - pF 30 Fig. 10. Gate Charge 10 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-ToDrain Voltage 40 24 I D - Amperes C oss 1000 0. 1 C rss 100 0. 01 0 5 10 15 20 25 30 35 40 V D S - Volts 1 10 100 Puls e W idth - millis ec onds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 1000