Advanced Technical Information PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS ID25 RDS(on) Electrically Isolated Tab = 100 V = 133 A Ω = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol Test Conditions VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 100 V VGS ±20 V VGSM ±30 V 133 A 75 A 400 A ID25 TC = 25°C ID(RMS) External lead current limit IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 60 A EAR TC = 25°C 100 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TC = 25°C 350 W -55 ... +175 175 -55 ... +150 °C °C °C 2500 V~ 20..120/4.6..20 Nm/lb 5 g TJ TJM Tstg VISOL 50/60 Hz, RMS, 1 minute FC Mounting Force Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 500µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V VGS = 0 V RDS(on) VGS = 10 V, ID = 60 A VGS = 15 V, ID = 400A © 2005 IXYS All rights reserved ISOPLUS 247TM E153432 Maximum Ratings V TJ = 150°C TJ = 175°C 5.5 5.0 V ±100 nA 25 250 1000 µA µA µA 8.0 mΩ mΩ G = Gate S = Source D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z Avalanche voltage rated z Fast recovery intrinsic diode Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies DC choppers z z AC motor control Advantages z Easy assembly z Space savings z High power density DS99365(06/05) IXTR 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 100 A, Note 1 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A Qgd 97 S 7600 pF 2900 pF 860 pF 30 ns 35 ns 150 ns 90 ns 240 nC 50 nC 135 nC RthJC .42 K/W RthCK 0.15 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V t rr IF = 25 A, dI/dt = 100 A/µs 100 ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 140 ns Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 IXTR 200N10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 350 200 VGS = 10V 9V 175 VGS = 10V 300 9V 250 125 I D - Amperes I D - Amperes 150 8V 100 75 7V 200 8V 150 7V 100 50 6V 25 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.5 1 1.5 Fig. 3. Output Characteristics @ 150ºC 3 3.5 4 4.5 5 2.4 VGS = 10V 9V VGS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 V D S - Volts 125 150 175 70 I D - Amperes TJ = 175∫ C 1.8 VGS = 10V VGS = 15V 60 50 40 1.2 30 1 20 0.8 100 External Lead Current limit 80 1.4 75 90 2.2 1.6 50 Fig. 6. Drain Current vs. Case Tem perature 2.4 2 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current R D S ( o n ) - Normalized 2 V D S - Volts V D S - Volts 10 TJ = 25∫ C 0.6 0 0 50 100 150 200 I D - Amperes © 2005 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTR 200N10P Fig. 8. Transconductance 300 140 250 120 g f s - Siemens I D - Amperes Fig. 7. Input Adm ittance 200 150 TJ = 150∫ C 100 25∫ C -40∫ C 50 100 TJ = -40∫ C 25∫ C 80 150∫ C 60 40 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 50 100 150 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 250 300 350 Fig. 10. Gate Charge 10 350 9 VDS = 50V 8 I D = 100A 300 250 I G = 10mA 7 VG S - Volts I S - Amperes 200 I D - Amperes 200 150 100 6 5 4 3 TJ = 150∫ C 2 50 TJ = 25∫ C 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - Volts 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 I D - Amperes Capacitance - picoFarads TJ = 175∫ C R DS(on) Limit f = 1MHz C iss 10,000 C oss TC = 25∫ C 100µs 100 1ms C rss 1,000 10ms DC 100 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 100 V D S - Volts 1000 IXTR 200N10P Fig. 1 3 . M a x im um Tr a ns ie nt The r m a l Re s is ta nc e R( t h ) J C - ∫C / W 1.00 0.10 0.01 1 10 100 Pu ls e W idth - millis ec on ds © 2005 IXYS All rights reserved 1000