IXYS IXTR200N10P

Advanced Technical Information
PolarTM HiPerFET
Power MOSFET
IXTR 200N10P
VDSS
ID25
RDS(on)
Electrically Isolated Tab
= 100 V
= 133 A
Ω
= 8 mΩ
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
Symbol
Test Conditions
VDSS
TJ = 25°C to 175°C
100
V
VDGR
TJ = 25°C to 175°C; RGS = 1 MΩ
100
V
VGS
±20
V
VGSM
±30
V
133
A
75
A
400
A
ID25
TC = 25°C
ID(RMS)
External lead current limit
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
60
A
EAR
TC = 25°C
100
mJ
EAS
TC = 25°C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
350
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
2500
V~
20..120/4.6..20
Nm/lb
5
g
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS, 1 minute
FC
Mounting Force
Weight
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
100
VGS(th)
VDS = VGS, ID = 500µA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 60 A
VGS = 15 V, ID = 400A
© 2005 IXYS All rights reserved
ISOPLUS 247TM
E153432
Maximum Ratings
V
TJ = 150°C
TJ = 175°C
5.5
5.0
V
±100
nA
25
250
1000
µA
µA
µA
8.0
mΩ
mΩ
G = Gate
S = Source
D = Drain
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
z
Avalanche voltage rated
z
Fast recovery intrinsic diode
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
DC choppers
z
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
DS99365(06/05)
IXTR 200N10P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 100 A, Note 1
60
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A
Qgd
97
S
7600
pF
2900
pF
860
pF
30
ns
35
ns
150
ns
90
ns
240
nC
50
nC
135
nC
RthJC
.42 K/W
RthCK
0.15
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
200
A
ISM
Repetitive
400
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
t rr
IF = 25 A, dI/dt = 100 A/µs
100
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
140 ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
IXTR 200N10P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
350
200
VGS = 10V
9V
175
VGS = 10V
300
9V
250
125
I D - Amperes
I D - Amperes
150
8V
100
75
7V
200
8V
150
7V
100
50
6V
25
50
0
6V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0.5
1
1.5
Fig. 3. Output Characteristics
@ 150ºC
3
3.5
4
4.5
5
2.4
VGS = 10V
9V
VGS = 10V
2.2
150
R D S ( o n ) - Normalized
175
I D - Amperes
2.5
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
200
8V
125
100
7V
75
6V
50
25
2
1.8
I D = 200A
1.6
1.4
I D = 100A
1.2
1
0.8
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
-50
-25
0
V D S - Volts
125
150
175
70
I D - Amperes
TJ = 175∫ C
1.8
VGS = 10V
VGS = 15V
60
50
40
1.2
30
1
20
0.8
100
External Lead Current limit
80
1.4
75
90
2.2
1.6
50
Fig. 6. Drain Current vs. Case
Tem perature
2.4
2
25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
R D S ( o n ) - Normalized
2
V D S - Volts
V D S - Volts
10
TJ = 25∫ C
0.6
0
0
50
100
150
200
I D - Amperes
© 2005 IXYS All rights reserved
250
300
350
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXTR 200N10P
Fig. 8. Transconductance
300
140
250
120
g f s - Siemens
I D - Amperes
Fig. 7. Input Adm ittance
200
150
TJ = 150∫ C
100
25∫ C
-40∫ C
50
100
TJ = -40∫ C
25∫ C
80
150∫ C
60
40
20
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
0
50
100
150
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
250
300
350
Fig. 10. Gate Charge
10
350
9
VDS = 50V
8
I D = 100A
300
250
I G = 10mA
7
VG S - Volts
I S - Amperes
200
I D - Amperes
200
150
100
6
5
4
3
TJ = 150∫ C
2
50
TJ = 25∫ C
1
0
0
0.4
0.6
0.8
1
1.2
1.4
1.6
0
V S D - Volts
25
50
75
100 125 150 175 200 225 250
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
1000
100,000
I D - Amperes
Capacitance - picoFarads
TJ = 175∫ C
R DS(on) Limit
f = 1MHz
C iss
10,000
C oss
TC = 25∫ C
100µs
100
1ms
C rss
1,000
10ms
DC
100
10
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
V D S - Volts
1000
IXTR 200N10P
Fig. 1 3 . M a x im um Tr a ns ie nt The r m a l Re s is ta nc e
R( t h ) J C - ∫C / W
1.00
0.10
0.01
1
10
100
Pu ls e W idth - millis ec on ds
© 2005 IXYS All rights reserved
1000