MMDT1902DW

MMDT1901DW...MMDT1906DW
NPN Silicon Epitaxial Planar Digital Transistor
for switching and interface circuit and drive circuit
applications
6
5
4
Features
TR2
• Transistors with built-in bias resistors R1 and R2
TR1
• Simplification of circuit design
1
• Reduces number of components and board space
2
1. Emitter 2. Base 3. Collector
4. Emitter 5. Base 6. Collector
SOT-363 Plastic Package
3
H
C
Resistor Values
Type
R1 (KΩ)
MMDT1901DW
4.7
E
T
MMDT1902DW
10
MMDT1903DW
22
MMDT1904DW
47
MMDT1905DW
M
E
MMDT1906DW
Absolute Maximum Ratings at Ta = 25℃(TR1,TR2)
S
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
R2 (KΩ)
2.2
4.7
MMDT1901DW~1904DW
MMDT1905DW~1906DW
Total Power Dissipation
Junction Temperature
Storage Temperature Range
4.7
10
22
47
47
47
Symbol
Value
Unit
VCBO
VCEO
50
50
V
V
VEBO
10
5
V
IC
100
mA
Ptot
200
mW
Tj
150
℃
Tstg
- 55 to + 150
℃
SEMTECH ELECTRONICS LTD.
®
Dated: 02/01/2014 Rev: 01
MMDT1901DW…MMDT1906DW
Characteristics at Ta = 25℃(TR1,TR2)
Parameter
DC Current Gain
at VCE = 5 V, IC = 10 mA
Symbol
MMDT1901DW
MMDT1902DW
MMDT1903DW
MMDT1904DW
MMDT1905DW
MMDT1906DW
Collector Base Cutoff Current
at VCB = 50 V
Collector Emitter Cutoff Current
at VCE = 50 V
Emitter Base Cutoff Current
at VEB = 10 V
at VEB = 10 V
at VEB = 10 V
at VEB = 10 V
at VEB = 5 V
at VEB = 5 V
Collector Emitter Saturation Voltage
at IC = 5 mA, IB = 0.25 mA
Input Voltage (ON)
at VCE = 0.2 V, IC = 5 mA
S
Resistance Ratio
Typ.
Max.
Unit
30
50
70
80
80
80
-
-
-
ICBO
-
-
100
nA
ICEO
-
-
0.5
μA
hFE
IEBO
820
380
170
82
78
74
H
C
-
1520
710
330
150
145
138
-
0.3
-
2
2.4
3
5
1.1
1.3
1.5
0.8
-
250
-
3.29
7
15.4
32.9
1.54
3.29
0.9
0.0421
0.09
4.7
10
22
47
2.2
4.7
1
0.0468
0.1
6.11
13
28.6
61.1
2.86
6.11
1.1
0.0515
0.11
E
T
MMDT1901DW
MMDT1902DW
MMDT1903DW
MMDT1904DW
MMDT1905DW
MMDT1906DW
MMDT1901DW~1904DW
MMDT1905DW~1906DW
M
E
Input Voltage (OFF)
at VCE = 5 V, IC = 100 µA
Transition Frequency
at VCE = 10 V, IC = 5 mA
Input Resistance
MMDT1901DW
MMDT1902DW
MMDT1903DW
MMDT1904DW
MMDT1905DW
MMDT1906DW
Min.
MMDT1901DW
MMDT1902DW
MMDT1903DW
MMDT1904DW
MMDT1905DW
MMDT1906DW
MMDT1901DW~1904DW
MMDT1905DW
MMDT1906DW
VCEsat
VI(ON)
VI(OFF)
fT
R1
R1/R2
-
1.1
1.2
1.3
1.5
0.6
0.7
1
0.5
μA
V
V
V
MHz
KΩ
-
SEMTECH ELECTRONICS LTD.
®
Dated: 02/01/2014 Rev: 01
MMDT1901DW…MMDT1906DW
TR1,TR2 Common
MMDT1901DW
MMDT1903DW
MMDT1902DW
S
H
C
E
T
M
E
MMDT1905DW
MMDT1904DW
MMDT1906DW
SEMTECH ELECTRONICS LTD.
®
Dated: 02/01/2014 Rev: 01
MMDT1901DW…MMDT1906DW
MMDT1901DW
MMDT1902DW
MMDT1903DW
S
H
C
E
T
M
E
MMDT1905DW
MMDT1904DW
MMDT1906DW
SEMTECH ELECTRONICS LTD.
®
Dated: 02/01/2014 Rev: 01
MMDT1901DW…MMDT1906DW
TR1,TR2 Common
MMDT1902DW
MMDT1901DW
MMDT1903DW
S
H
C
E
T
M
E
MMDT1905DW
MMDT1904DW
MMDT1906DW
SEMTECH ELECTRONICS LTD.
®
Dated: 02/01/2014 Rev: 01