YZG TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com 2.2 W Constant Output Power Class-D Audio Amplifier with Class-G Boost Converter Check for Samples: TPA2080D1 FEATURES DESCRIPTION • The TPA2080D1 is a high efficiency Class-D audio power amplifier with an integrated Class-G boost converter that enhances efficiency at low output power. It drives up to 2.2 W into an 4 Ω speaker (1% THD+N). With 85% typical efficiency, the TPA2080D1 helps extend battery life when playing audio. 1 • • • 2.2 W into 4 Ω Load from 3.6 V Supply (1% THD+N) Integrated Class-G Boost Converter – Increases Efficiency at Low Output Power Low Quiescent Current of 3.5 mA from 3.6 V Thermal and Short-Circuit Protection with Auto Recovery 20 dB Fixed Gain Available in 1.53 mm × 1.98 mm, 0.5 mm pitch 12-ball WCSP Package APPLICATIONS The built-in boost converter generates a 5.75 V supply voltage for the Class-D amplifier when high output power is required. This provides a louder audio output than a stand-alone amplifier directly connected to the battery. During low audio output power periods, the boost converter deactivates and connects VBAT directly to the Class-D amplifier supply, PVDD. This improves overall efficiency. • • • The TPA2080D1 has an integrated low-pass filter to improve the RF rejection and reduce DAC out-of-band noise, increasing the signal-to-noise ratio (SNR). • • Cell Phones PDA, GPS Portable Electronics and Speakers The TPA2080D1 is available in a space saving 1.53 mm × 1.982 mm, 0.5 mm pitch WCSP package (YZG). SIMPLIFIED APPLICATION DIAGRAM 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2012, Texas Instruments Incorporated TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. FUNCTIONAL BLOCK DIAGRAM DEVICE PINOUT YZG Package (Top View) 2 A1 A2 A3 PVDD SW BGND B1 B2 B3 OUT+ N/C VBAT C1 C2 C3 OUT– EN IN+ D1 D2 D3 PGND AGND IN– Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com PIN FUNCTIONS PIN INPUT/ OUTPUT/ POWER (I/O/P) DESCRIPTION NAME WCSP PVDD A1 O Boost converter output and Class-D power stage supply voltage. SW A2 I Boost converter switch input; connect boost inductor between VBAT and SW. BGND A3 P Boost converter power ground. OUT+ B1 O Positive audio output. N/C B2 – No Connection VBAT B3 P Supply voltage. OUT– C1 O Negative audio output. EN C2 I Device enable; set to logic high to enable. IN+ C3 I Positive audio input. PGND D1 P Class-D power ground. AGND D2 P Analog ground. IN– D3 I Negative audio input. ORDERING INFORMATION PACKAGED DEVICES (1) PART NUMBER (2) SYMBOL 12-ball, 1.53 mm × 1.982 mm WSCP TPA2080D1YZGR TPA2080D1 12-ball, 1.53 mm × 1.982 mm WSCP TPA2080D1YZGT TPA2080D1 TA –40°C to 85°C (1) (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. The YZG package is only available taped and reeled. The suffix “R” indicates a reel of 3000, the suffix “T” indicates a reel of 250. ABSOLUTE MAXIMUM RATINGS Over operating free–air temperature range, TA= 25°C (unless otherwise noted) (1) Supply voltage VBAT Input Voltage, VI IN+, IN– Output continuous total power dissipation MIN MAX UNIT –0.3 6 V –0.3 VBAT + 0.3 V See the Thermal Information Table Operating free-air temperature range, TA –40 85 °C Operating junction temperature range, TJ –40 150 °C Storage temperature range, TSTG –65 150 °C Minimum load resistance 3.2 ESD Protection (1) Ω HBM 2000 V CDM 500 V MM 100 V Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 3 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com THERMAL INFORMATION TPA2080D1 THERMAL METRIC (1) YZG UNITS 12 PINS θJA Junction-to-ambient thermal resistance 97.3 θJC(top) Junction-to-case(top) thermal resistance 36.7 θJB Junction-to-board thermal resistance 55.9 ψJT Junction-to-top characterization parameter 13.9 ψJB Junction-to-board characterization parameter 49.5 (1) °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. RECOMMENDED OPERATING CONDITIONS MIN MAX Supply voltage, VBAT 2.5 5.2 UNIT VIH High–level input voltage, END 1.3 VIL Low–level input voltage, END 0.6 V TA Operating free-air temperature –40 85 °C TJ Operating junction temperature –40 150 °C TYP MAX V V ELECTRICAL CHARACTERISTICS VBAT = 3.6 V, TA = 25°C, RL = 8 Ω + 33 μH (unless otherwise noted) PARAMETER TEST CONDITIONS VBAT supply voltage range Class-D supply voltage range MIN 2.5 EN = VBAT, boost converter active Boost converter disabled (in bypass mode) 5.75 2.5 Supply under voltage shutdown 5.2 2.2 Operating quiescent current EN = VBAT = 3.6 V Shutdown quiescent current VBAT = 2.5 V to 5.2 V, EN = GND Input common-mode voltage range IN+, IN– Start-up time 4 5.2 2.0 0.2 0.6 6 Submit Documentation Feedback UNIT V V V 6 mA 1 μA 1.3 V 10 ms Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com OPERATING CHARACTERISTICS VBAT= 3.6 V, EN = VBAT, TA = 25°C, RL = 8 Ω + 33 μH (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 5.4 5.75 6.4 UNIT BOOST CONVERTER PVDD Boost converter output voltage range Boost converter input current limit IBOOST = 0 mA IBOOST = 700 mA 5.6 Power supply current Boost converter start-up current limit fBOOST V 1800 Boost converter starts up from full shutdown IL V 600 Boost converter wakes up from auto-pass through mode mA 1000 Boost converter frequency 1.2 MHz CLASS-D AMPLIFIER PO Output power THD = 1%, VBAT = 2.5 V, f = 1 kHz 1440 THD = 1%, VBAT = 3.0 V, f = 1 kHz 1750 THD = 1%, VBAT = 3.6 V, f = 1 kHz 1900 THD = 1%, VBAT = 2.5 V, f = 1 kHz, RL = 4 Ω + 33 µH 1460 THD = 1%, VBAT = 3.0 V, f = 1 kHz, RL = 4 Ω + 33 µH 1800 THD = 1%, VBAT = 3.6 V, f = 1 kHz, RL = 4 Ω + 33 µH 2280 AV Voltage gain 20 20.5 dB VOOS Output offset voltage 2 10 mV Short-circuit protection threshold current 2 Input impedance (per input pin) 24 RIN Input impedance in shutdown (per input pin) ZO Output impedance in shutdown 19.5 mW EN = 0 V 2 kΩ EN = 0 V 2 VRMS Boost converter auto-pass through threshold Class-D output voltage threshold when boost converter automatically turns on 2 VPK Class-D switching frequency η Class-D and boost combined efficiency PO = 500 mW, VBAT = 3.6 V EN Noise output voltage Signal-to-noise ratio 275 Total harmonic distortion plus noise (1) 300 A-weighted 49 Unweighted 65 1.7 W, RL = 8 Ω + 33 µH. A-weighted 97.5 1.7 W, RL = 8 Ω + 33 µH. Unweighted 95 2 W, RL = 4 Ω + 33 µH. A-weighted 95 kHz μVRMS dB 93 PO = 100 mW, f = 1 kHz 0.06% PO = 500 mW, f = 1 kHz 0.07% PO = 1.7 W, f = 1 kHz, RL = 8 Ω + 33 µH 0.07% PO = 2 W, f = 1 kHz, RL = 4 Ω + 33 µH 0.15% AC PSRR AC-Power supply ripple rejection (output referred) 200 mVPP square ripple, VBAT = 3.8 V, f = 217 Hz AC CMRR AC-Common mode rejection ratio (output referred) 200 mVPP square ripple, VBAT = 3.8 V, f = 217 Hz 71 200 mVPP square ripple, VBAT = 3.8 V, f = 1 kHz 71 (1) 325 90% 2 W, RL = 4 Ω + 33 µH. Unweighted THD+N kΩ 1300 Maximum input voltage swing fCLASS-D SNR A 62.5 200 mVPP square ripple, VBAT = 3.8 V, f = 1 kHz 62.5 dB dB A-weighted Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 5 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com TEST SET-UP FOR GRAPHS TPA2080D1 1 ˩F + Measurement Output – IN+ OUT+ Load IN– OUT– 30-kHz Low-Pass Filter + Measurement Input – 1 ˩F SW PVDD EN VBAT 10 k GND 22 ˩F 2.2 ˩H 10 ˩F + Supply – 6 (1) The 1 µF input capacitors on IN+ and IN- were shorted for input common-mode voltage measurements. (2) A 33 µH inductor was placed in series with the load resistor to emulate a small speaker for efficiency measurements. (3) The 30 kHz low-pass filter is required even if the analyzer has an internal low-pass filter. An R-C low-pass filter (100 Ω, 47 nF) is used on each output for the data sheet graphs. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. 3.0 5.0 RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 4.5 4.0 PO − Output Power − W PO − Output Power − W 2.5 2.0 1.5 1.0 0.0 2.3 2.8 THD + N = 10% THD + N = 1% 2.0 1.5 3.3 3.8 4.3 THD + N = 10% THD + N = 1% 0.0 2.5 4.8 3.0 3.5 4.0 4.5 5.0 VBAT − Supply Voltage − V VBAT − Supply Voltage − V Figure 1. OUTPUT POWER vs SUPPLY VOLTAGE Figure 2. OUTPUT POWER vs SUPPLY VOLTAGE 1.2 0.8 0.7 0.6 0.5 0.4 0.3 0.2 RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0.1 0.0 0.0 0.5 1.0 1.5 2.0 IVBAT − Total Supply Current − A VBAT = 2.8 V VBAT = 3.0V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.9 RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 1.0 0.8 0.6 0.4 VBAT = 2.8 V VBAT = 3.0V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.2 0.0 0.0 2.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 PO − Output Power − W PO − Output Power − W Figure 3. TOTAL SUPPLY CURRENT vs OUTPUT POWER Figure 4. TOTAL SUPPLY CURRENT vs OUTPUT POWER 10 PO = 225 mW PO = 560 mW PO = 1 W PO = 1.7 W VBAT = 3.6 V RL = 8 Ω + 33 µH Gain = 20 dB 1 0.1 0.01 0.001 20 100 1k f − Frequency − Hz 10k 20k THD+N − Total Harmonic Distortion + Noise − % IVBAT − Total Supply Current − A 2.5 0.5 1.0 THD+N − Total Harmonic Distortion + Noise − % 3.0 1.0 RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0.5 3.5 10 PO = 62 mW PO = 450 mW PO = 1.1 W PO = 2 W VBAT = 3.6 V RL = 4 Ω + 33 µH Gain = 20 dB 1 0.1 0.01 0.001 20 Figure 5. THD+N vs FREQUENCY 100 1k f − Frequency − Hz 10k 20k Figure 6. THD+N vs FREQUENCY Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 7 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 10 THD+N − Total Harmonic Distortion + Noise − % 100 1 0.1 0.01 1m 10m 100m 1 4 1 0.1 0.01 1m 10m 100m 1 5 PO − Output Power − W Figure 7. THD+N vs OUTPUT POWER Figure 8. THD+N vs OUTPUT POWER 100 80 80 60 40 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0 0.01 0.1 1 60 40 20 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 0 0.01 3 0.1 1 4 PO − Output Power − W PO − Output Power − W Figure 9. TOTAL EFFICIENCY vs OUTPUT POWER Figure 10. TOTAL EFFICIENCY vs OUTPUT POWER 1.4 0.8 0.7 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.6 0.5 0.4 0.3 0.2 RL = 8 Ω + 33 µH Gain = 20 dB f = 1 kHz 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 PD − Total Power Dissipation − W 0.9 PD − Total Power Dissipation − W RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 10 100 20 8 100 PO − Output Power − W Efficiency − % Efficiency − % THD+N − Total Harmonic Distortion + Noise − % VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. 1.2 RL = 4 Ω + 33 µH Gain = 20 dB f = 1 kHz 1.0 0.8 0.6 0.4 VBAT = 2.8 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 PO − Output Power − W PO − Output Power − W Figure 11. TOTAL POWER DISSIPATION vs OUTPUT POWER Figure 12. TOTAL POWER DISSIPATION vs OUTPUT POWER Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. 10m 0 RL = 8 Ω + 33 µH Gain = 20 dB Supply Ripple Rejection − dB Supply Current − A 8m 6m 4m 2m 0 2.3 RL = 8 Ω + 33 µH Input Level = 0.2 Vpp Gain = 20 dB Output Referred −20 VBAT = 2.5 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V −40 −60 −80 −100 2.6 2.9 3.2 3.5 3.8 4.1 4.4 4.7 5.0 20 100 1k f − Frequency − Hz VBAT − V 0 −80 RL = 8 Ω + 33 µH Input Level = 0.2 Vpp Gain = 20 dB CIN = 1 µF −20 VBAT = 2.5 V VBAT = 3.0 V VBAT = 3.6 V VBAT = 4.2 V VBAT = 5.0 V −40 −60 RL = 8 Ω + 33 µH No Input Signal Gain = 20 dB −90 −100 −110 −120 −130 −80 −140 −100 −150 20 100 1k f − Frequency − Hz 10k 20k 0 Figure 15. COMMON-MODE REJECTION RATIO vs FREQUENCY 4k 6k 8k 10k 12k 14k 16k 18k 20k 22k 24k Frequency − Hz 6 VBAT = 3.6 V Gain = 20 dB POUT = 100 mW @ 1 kHz RL = 8 Ω + 33 µH EN VOUT+ − VOUT− 4 V − Voltage − V 4 2k Figure 16. A-WEIGHTED OUTPUT NOISE vs FREQUENCY 6 V − Voltage − V 20k Figure 14. SUPPLY RIPPLE REJECTION vs FREQUENCY Amplitude − dBV CMRR − Common−Mode Rejection Ratio − dB Figure 13. QUIESCENT SUPPLY CURRENT vs BATTERY VOLTAGE 10k 2 0 −2 −2m VBAT = 3.6 V Gain = 20 dB POUT = 100 mW @ 1 kHz RL = 8 Ω + 33 µH EN VOUT+ − VOUT− 2 0 0 2m 4m t − Time − s 6m 8m 10m −2 −2.5m Figure 17. STARTUP TIMING −1.5m −500.0u 500.0u t − Time − s 1.5m 2.5m Figure 18. SHUTDOWN TIMING Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 9 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com TYPICAL CHARACTERISTICS (continued) VBAT = 3.6 V, CI = 1 µF, CBOOST = 22 µF, LBOOST = 2.2 µH, EN = VBAT, and Load = 8 Ω + 33 µH, no ferrite bead unless otherwise specified. Figure 19. EMC PERFORMANCE PO = 750 mW with 2 INCH SPEAKER CABLE 10 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com BOOST CONVERTER AUTO PASS THROUGH (APT) The TPA2080D1 consists of a Class-G boost converter and a Class-D amplifier. The boost converter operates from the supply voltage, VBAT, and generates a higher output voltage PVDD at 5.75 V. PVDD drives the supply voltage of the Class-D amplifier. This improves loudness over non-boosted solutions. The boost converter has a “Pass Through” mode in which it turns off automatically and PVDD is directly connected to VBAT through an internal bypass switch. The boost converter is adaptive and operates between pass through mode and boost mode depending on the output audio signal amplitude. When the audio output amplitude exceeds the “auto pass through” (APT) threshold, the boost converter is activated automatically and goes to boost mode. The transition time from normal mode to boost mode is fast enough to prevent clipping large transient audio signals. TPA2080D1’s APT threshold is fixed at 2 VPEAK. When the audio output signal is below APT threshold, the boost converter is deactivated and goes to pass through mode. The adaptive boost converter maximizes system efficiency at lower audio output levels. The Class-G boost converter is designed to drive the Class-D amplifier only. Do not use the boost converter to drive external devices. Figure 20 shows how the adaptive boost converter behaves with a typical audio signal. spacer Figure 20. Class-G Boost Converter with Typical Music Playback Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 11 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com BOOST CONVERTER COMPONENT SECTION The critical external components are summarized in the following table: PARAMETER TEST CONDITIONS Boost converter inductor At 30% rated DC bias current of the inductor MIN Boost converter input capacitor Boost converter output capacitor Working capacitance biased at boost output voltage, if 4.7µH inductor is chosen, then minimum capacitance is 10 µF TYP MAX UNIT 4.7 µH 4.7 10 µF 4.7 22 µF 1.5 2.2 Boost Terms The following is a list of terms and definitions used in the boost equations found later in this document. C Minimum boost capacitance required for a given ripple voltage on PVDD. L Boost inductor fBOOST Switching frequency of the boost converter. IPVDD Current pulled by the Class-D amplifier from the boost converter. IL Average current through the boost inductor. PVDD Supply voltage for the Class-D amplifier. (Voltage generated by the boost converter output) VBAT Supply voltage to the IC. ΔIL Ripple current through the inductor. ΔV Ripple voltage on PVDD. Inductor Equations Inductor current rating is determined by the requirements of the load. The inductance is determined by two factors: the minimum value required for stability and the maximum ripple current permitted in the application. Use Equation 1 to determine the required current rating. Equation 1 shows the approximate relationship between the average inductor current, IL, to the load current, load voltage, and input voltage (IPVDD, PVDD, and VBAT, respectively). Insert IPVDD, PVDD, and VBAT into Equation 1 and solve for IL. The inductor must maintain at least 90% of its initial inductance value at this current. PVDD æ ö IL = IPVDD ´ ç ÷ è VBAT ´ 0.8 ø (1) Ripple current, ΔIL, is peak-to-peak variation in inductor current. Smaller ripple current reduces core losses in the inductor and reduces the potential for EMI. Use Equation 2 to determine the value of the inductor, L. Equation 2 shows the relationship between inductance L, VBAT, PVDD, the switching frequency, fBOOST, and ΔIL. Insert the maximum acceptable ripple current into Equation 2 and solve for L. VBAT ´ (PVDD - VBAT) L= DIL ´ ¦BOOST ´ PVDD (2) ΔIL is inversely proportional to L. Minimize ΔIL as much as is necessary for a specific application. Increase the inductance to reduce the ripple current. Do not use greater than 4.7 μH, as this prevents the boost converter from responding to fast output current changes properly. If using above 3.3 µH, then use at least 10 µF capacitance on PVDD to ensure boost converter stability. The typical inductor value range for the TPA2080D1 is 2.2 μH to 3.3 µH. Select an inductor with less than 0.5 Ω dc resistance, DCR. Higher DCR reduces total efficiency due to an increase in voltage drop across the inductor. 12 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com Table 1. Sample Inductors L (µH) SUPPLIER COMPONENT CODE SIZE (LxWxH mm) DCR TYP (mΩ) ISAT MAX (A) 2.2 Chilisin Electronics Corp. CLCN252012T-2R2M-N 2.5 x 2.0 x 1.2 105 1.2 2.2 Toko 1239AS-H-2R2N=P2 2.5 x 2.0 x 1.2 96 2.3 2.2 Coilcraft XFL4020-222MEC 4.0 x 4.0 x 2.15 22 3.5 3.3 Toko 1239AS-H-3R3N=P2 2.5 x 2.0 x 1.2 160 2.0 3.3 Coilcraft XFL4020-332MEC 4.0 x 4.0 x 2.15 35 2.8 C RANGE 10 - 22 µF / 16 V 10 - 22 µF / 10 V 10 - 22 µF / 10 V Boost Converter Capacitor Selection The value of the boost capacitor is determined by the minimum value of working capacitance required for stability and the maximum voltage ripple allowed on PVDD in the application. Working capacitance refers to the available capacitance after derating the capacitor value for DC bias, temperature, and aging. Do not use any component with a working capacitance less than 6.8 µF. This corresponds to a 10 μF/16 V capacitor or a 10 μF/10 V capacitor. Do not use above 22 μF capacitance as it will reduce the boost converter response time to large output current transients. Equation 3 shows the relationship between the boost capacitance, C, to load current, load voltage, ripple voltage, input voltage, and switching frequency (IPVDD, PVDD, ΔV, VBAT, and fBOOST respectively). Insert the maximum allowed ripple voltage into Equation 3 and solve for C. The 1.5 multiplier accounts for capacitance loss due to applied dc voltage and temperature for X5R and X7R ceramic capacitors. I ´ (PVDD - VBAT) C = 1.5 ´ PVDD DV ´ ¦BOOST ´ PVDD (3) COMPONENTS LOCATION AND SELECTION Decoupling Capacitors The TPA2080D1 is a high-performance Class-D audio amplifier that requires adequate power supply decoupling. Adequate power supply decoupling to ensures that the efficiency is high and total harmonic distortion (THD) is low. Place a low equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1 µF, within 2 mm of the VBAT ball. Use X5R and X7R ceramic capacitors. This choice of capacitor and placement helps with higher frequency transients, spikes, or digital hash on the line. Additionally, placing this decoupling capacitor close to the TPA2080D1 is important, as any parasitic resistance or inductance between the device and the capacitor causes efficiency loss. In addition to the 0.1 μF ceramic capacitor, place a 2.2 µF to 10 µF capacitor on the VBAT supply trace. This larger capacitor acts as a charge reservoir, providing energy faster than the board supply, thus helping to prevent any droop in the supply voltage. Input Capacitors Input audio DC decoupling capacitors are recommended. The input capacitors and TPA2080D1 input impedance form a high-pass filter with the corner frequency, fC, determined in Equation 4. Any mismatch in capacitance between the two inputs will cause a mismatch in the corner frequencies. Severe mismatch may also cause turn-on pop noise. Choose capacitors with a tolerance of ±10% or better. Use X5R and X7R ceramic capacitors. 1 fc = 2 p x x RICI ) ( (4) Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 13 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com SHORT CIRCUIT AUTO-RECOVERY When a short circuit event happens, the TPA2080D1 goes to low duty cycle mode and tries to reactivate itself every 1.6 seconds. The auto-recovery will continue until the short circuit event stops. This feature protects the device without affecting the device's long term reliability. THERMAL PROTECTION It is important to operate the TPA2080D1 at temperatures lower than its maximum operating temperature. The maximum ambient temperature depends on the heat-sinking ability of the PCB system. Given θJA of 97.3°C/W, the maximum allowable junction temperature of 150°C, and the internal dissipation of 0.5 W for 1.9 W, 8 Ω load, 3.6 V supply, the maximum ambient temperature is calculated as: TA,MAX = TJ,MAX – θJAPD = 150°C – (97.3°C/W × 0.5 W) = 101.4°C The calculated maximum ambient temperature is 101.4°C at maximum power dissipation at 3.6 V supply and 8 Ω load. The TPA2080D1 is designed with thermal protection that turns the device off when the junction temperature surpasses 150°C to prevent damage to the IC. OPERATION WITH DACS AND CODECS Large noise voltages can be present at the output of ΔΣ DACs and CODECs, just above the audio frequency (e.g: 80 kHz with a 300 mVP-P). This out-of-band noise is due to the noise shaping of the delta-sigma modulator in the DAC. Some Class-D amplifiers have higher output noise when used in combination with these DACs and CODECs. This is because out-of-band noise from the CODEC/DAC mixes with the Class-D switching frequencies in the audio amplifier input stage. The TPA2080D1 has a built-in low-pass filter with cutoff frequency at 55 kHz that reduces the out-of-band noise and RF noise, filtering out-of-band frequencies that could degrade in-band noise performance. If driving the TPA2080D1 input with 4th-order or higher ΔΣ DACs or CODECs, add an R-C low pass filter at each of the audio inputs (IN+ and IN-) of the TPA2080D1 to ensure best performance. The recommended resistor value is 100 Ω and the capacitor value of 47 nF. SPEAKER LOAD LIMITATION Speakers are non-linear loads with varying impedance (magnitude and phase) over the audio frequency. A portion of speaker load current can flow back into the boost converter output via the Class-D output H-bridge high-side device. This is dependent on the speaker's phase change over frequency, and the audio signal amplitude and frequency content. Most portable speakers have limited phase change at the resonant frequency, typically no more than 40 or 50 degrees. To avoid excess flow-back current, use speakers with limited phase change. Otherwise, flow-back current could drive the PVDD voltage above the absolute maximum recommended operational voltage. Confirm proper operation by connecting the speaker to the TPA2080D1 and driving it at maximum output swing. Observe the PVDD voltage with an oscilloscope. In the unlikely event the PVDD voltage exceeds 6.5 V, add a 6.8 V Zener diode between PVDD and ground to ensure the TPA2080D1 operates properly. The amplifier has thermal overload protection and deactivates if the die temperature exceeds 150°C. It automatically reactivates once die temperature returns below 150°C. Built-in output over-current protection deactivates the amplifier if the speaker load becomes short-circuited. The amplifier automatically restarts 1.6 seconds after the over-current event. Although the TPA2080D1 Class-D output can withstand a short between OUT+ and OUT-, do not connect either output directly to GND, VDD, or VBAT as this could damage the device. PACKAGE DIMENSIONS The TPA2080D1 uses a 12-ball, 0.5 mm pitch WCSP package. The die length (D) and width (E) correspond to the package mechanical drawing at the end of the datasheet. Table 2. TPA2080D1 YZG Package Dimensions 14 Dimension D E Max 2012 µm 1560 µm Typ 1982 µm 1530 µm Min 1952 µm 1500 µm Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 TPA2080D1 SLOS733 – JANUARY 2012 www.ti.com BOARD LAYOUT TPA2080D1 has AGND, BGND and PGND for analog circuit, boost converter and Class-D amplifier respectively. These three ground pins should be connected together through a solid ground plane with multiple ground VIAs. In making the pad size for the WCSP balls, it is recommended that the layout use non-solder mask defined (NSMD) land. With this method, the solder mask opening is made larger than the desired land area, and the opening size is defined by the copper pad width. Figure 21 shows the appropriate diameters for a WCSP layout. Copper Trace Width Solder Pad Width Solder Mask Opening Copper Trace Thickness Solder Mask Thickness M0200-01 Figure 21. Land Pattern Dimensions Table 3. Land Pattern Dimensions (1) SOLDER PAD DEFINITIONS COPPER PAD Nonsolder mask defined (NSMD) 275 μm (+0.0, -25 μm) (1) (2) (3) (4) (5) (6) (7) SOLDER MASK OPENING (5) 375 μm (+0.0, -25 μm) (2) (3) (4) COPPER THICKNESS STENCIL (6) (7) OPENING STENCIL THICKNESS 1 oz max (32 μm) 275 μm x 275 μm Sq. (rounded corners) 125 μm thick Circuit traces from NSMD defined PWB lands should be 75 μm to 100 μm wide in the exposed area inside the solder mask opening. Wider trace widths reduce device stand off and impact reliability. Best reliability results are achieved when the PWB laminate glass transition temperature is above the operating the range of the intended application. Recommend solder paste is Type 3 or Type 4. For a PWB using a Ni/Au surface finish, the gold thickness should be less 0.5 mm to avoid a reduction in thermal fatigue performance. Solder mask thickness should be less than 20 μm on top of the copper circuit pattern Best solder stencil performance is achieved using laser cut stencils with electro polishing. Use of chemically etched stencils results in inferior solder paste volume control. Trace routing away from WCSP device should be balanced in X and Y directions to avoid unintentional component movement due to solder wetting forces. Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPA2080D1 15 PACKAGE OPTION ADDENDUM www.ti.com 14-Mar-2012 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) TPA2080D1YZGR ACTIVE DSBGA YZG 12 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM TPA2080D1YZGT ACTIVE DSBGA YZG 12 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 13-Mar-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) TPA2080D1YZGR DSBGA YZG 12 3000 180.0 8.4 TPA2080D1YZGT DSBGA YZG 12 250 180.0 8.4 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1.63 2.08 0.69 4.0 8.0 Q1 1.63 2.08 0.69 4.0 8.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 13-Mar-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPA2080D1YZGR DSBGA YZG 12 3000 210.0 185.0 35.0 TPA2080D1YZGT DSBGA YZG 12 250 210.0 185.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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