UD4013 P-Ch 40V Fast Switching MOSFETs General Description Product Summery The UD4013 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD4013 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -40V 40mΩ -23A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z CCFL Back-light Inverter Features z Advanced high cell density Trench technology TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage -40 V Gate-Source Voltage ±20 V 1 -23 A 1 -18 A -46 A Continuous Drain Current, -VGS @ -10V Continuous Drain Current, -VGS @ -10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 66 mJ IAS Avalanche Current -27.2 A 4 PD@TC=25℃ Total Power Dissipation 31.3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 4 ℃/W UD4013 P-Ch 40V Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -40 --- --- V Reference to 25℃ , ID=-1mA --- -0.012 --- V/℃ VGS=-10V , ID=-18A --- 32 40 VGS=-4.5V , ID=-12A --- 52 65 -1.0 -1.6 -2.5 V --- 4.32 --- mV/℃ VDS=-32V , VGS=0V , TJ=25℃ --- --- 1 VDS=-32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-18A --- 12.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 16 Ω Qg Total Gate Charge (-4.5V) --- 9 --- Qgs Gate-Source Charge --- 2.54 --- Qgd Gate-Drain Charge --- 3.1 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-12A nC --- 19.2 --- Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 12.8 --- Turn-Off Delay Time ID=-1A --- 48.6 --- Fall Time --- 4.6 --- Ciss Input Capacitance --- 1004 --- Coss Output Capacitance --- 108 --- Crss Reverse Transfer Capacitance --- 80 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -23 A --- --- -46 A --- --- -1 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD4013 P-Ch 40V Fast Switching MOSFETs P-Channel Typical Characteristics 60 12 ID=-12A VGS=-10V 10 55 RDSON (mΩ) -ID Drain Current (A) VGS=-7V VGS=-5V 8 6 50 45 VGS=-4.5V 40 4 VGS=-3V 35 2 0 30 0 0.5 1 1.5 -VDS Drain-to-Source Voltage (V) 2 2 4 Fig.1 Typical Output Characteristics 6 8 -VGS (V) 10 Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-12A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics of Reverse 12 18 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 6 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 3 150 UD4013 P-Ch 40V Fast Switching MOSFETs Capacitance (pF) 10000 100.00 F=1.0MHz Ciss 1000 100us 10.00 -ID (A) 1ms 10ms 100ms DC 1.00 Coss 100 0.10 Crss o Tc=25 C Single Pulse 10 0.01 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 0.1 1 -VDS (V) 10 100 ` Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TON 0.0001 T TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Waveform 4